MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL90N6F7


MOSFET N-channel 60 V, 0.0046 Ohm typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 17460
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AUD 0.7739
Multiples of: 3000

90 A60 V5.4 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V25 nCEnhancement Stripfet
NVMFD024N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 17460
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AUD 1.714
Multiples of: 1

           Cut Tape       
IPB108N15N3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
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Infineon 17460
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AUD 2.6339
Multiples of: 1

            Optimos 3      
IRFS4310TRLPBF


Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
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Infineon 17446
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AUD 3.1027
Multiples of: 1

130 A100 V5.6 mOhmsN - Channel 4 V- 55 C+ 175 C300 WSmd/SmtD2PAKReelSi1 Channel20 V170 nC   
BSS138W H6327


Trans MOSFET N-CH 60V 0.28A Automotive 3-Pin SOT-323 T/R
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Infineon 17435
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AUD 0.2429
Multiples of: 1

0.28 A60 V3.5 OhmsN 600 mV- 55 C+ 150 C0.5 WSurface MountSOT - 323 - 3Tape And ReelSi1 Channel10 V1 nCEnhancement  
SSM3K131TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=6.0A RDSON=0.0415Ohm @ 4.5V in UFM package
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Toshiba 17435
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AUD 0.2788
Multiples of: 1

6 A30 V27.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtUFM - 3Cut TapeSi1 Channel20 V10.1 nCEnhancement U - Mosiv
IRLB8314PBF


Trans MOSFET N-CH 30V 171A 3-Pin(3+Tab) TO-220AB Tube
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Infineon 17423
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AUD 0.5149
Multiples of: 1

125 W30 V1.9 mOhmsN - Channel 1.7 V- 55 C+ 175 C125 WThrough HoleTO - 220PAKTube- +/- 20 V40 nCEnhancement  
UT6MA2TCR


MOSFET 30V NCH+PCH MIDDLE PWR
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ROHM 17416
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AUD 0.341
Multiples of: 1

4 A30 V46 mOhms , 70 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel20 V4.3 nC , 6.7 nCEnhancement  
STH240N10F7-6


STMicroelectronics MOSFET
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STMicroelectronics 16490
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AUD 2.9754
Multiples of: 1000

180 A100 V2.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C300 WSmd/SmtH2PAK - 6ReelSi1 Channel20 V160 nCEnhancement Stripfet
ME50P06-G


MOSFET P Trench 60V 61A 60V @ 260uA 17 mΩ @ 17A,10V TO-252-2 (DPAK) RoHS
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MQTSUKI 15017
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AUD 0.3905
Multiples of: 1

                   
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