MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUAN04S7N008AUMA1


MOSFETs N
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Infineon 17038
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AUD 1.5714
Multiples of: 1

290 A40 V820 uOhmsN - Channel 3 V- 55 C+ 175 C133 WSMD/SMTHSOF - 5 - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V60 nCEnhancement OptiMOS
NX3008PBKW.115


Transistor: P-MOSFET; unipolar; -30V; -0.2A; 260mW; SOT323
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Nexperia 17028
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AUD 0.14
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HL2312


20V 5.5A 1.2W 25m@4.5V,4.5A 620mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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hongjiacheng 16975
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AUD 0.0378
Multiples of: 10

                   
STD17NF03LT4


Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
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STMicroelectronics 16975
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AUD 0.2505
Multiples of: 2500

            Supermesh      
SI1965DH-T1-BE3


Mosfet Array 2 P-Channel (Dual) 12V 1.14A (Ta), 1.3A (Tc) 740mW (Ta), 1.25W (Tc) Surface Mount SC-70-6
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Vishay 16975
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AUD 0.2519
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1.3 A12 V390 mOhmsP - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 8 V , 8 V4.2 nCEnhancement  
DMN4030LK3-13


Diodes Incorporated MOSFET ENHANCE MODE MOSFET 40V N-CHANNEL
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Diodes Incorporated 16975
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AUD 0.433
Multiples of: 2500

13.7 A40 V50 mOhmsN - Channel 1 V- 55 C+ 150 C4.18 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V12.9 nCEnhancement  
STD20NF06LT4


Transistor: N-MOSFET; unipolar; 60V; 17A; 60W; DPAK
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STMicroelectronics 16975
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AUD 0.7416
Multiples of: 2500

            Supermesh      
STD80N10F7


MOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII
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STMicroelectronics 16975
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AUD 0.75
Multiples of: 2500

70 A100 V10 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C85 WSmd/SmtDPAK - 2ReelSi1 Channel20 V45 nC  Stripfet
IAUCN08S7L013ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 16675
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AUD 2.7186
Multiples of: 1

293 A80 V1.26 mOhmsN - Channel 2 V- 55 C+ 175 C219 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel20 V120 nCEnhancement OptiMOS
RFD14N05LSM9A


Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
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ON Semiconductor 960
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AUD 0.764
Multiples of: 1

                   
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