MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLHS6242TRPBF


Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
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Infineon 17387
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AUD 0.2424
Multiples of: 5

22 A20 V11.7 mOhmsN - Channel 1.1 V- 55 C+ 150 C9.6 WSmd/SmtPQFN - 6ReelSi1 Channel12 V14 nCEnhancement  
FS3402 X2FS


SOT-23-3L MOSFETs ROHS
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FOSAN 17363
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AUD 0.0295
Multiples of: 20

                   
TQM2N7002DCU6 RFG


MOSFETs 60V, 0.26A, Dual N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17363
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AUD 0.0927
Multiples of: 1

260 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C376 mWSMD/SMTSOT - 363Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
PMZ130UNEYL


N-Channel 20 V 1.8A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount SOT-883
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Nexperia 17343
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AUD 0.1595
Multiples of: 5

           Reel       
DMN3401LVQ-13


MOSFETs MOSFET BVDSS: 25V-30V SOT563 T&R 10K
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Diodes Incorporated 17332
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AUD 0.0943
Multiples of: 1

           Reel , Cut TapeSi      
IPD30N08S2L-21


MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
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Infineon 17252
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AUD 1.1487
Multiples of: 1

30 A75 V20.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel10 V56 nCEnhancementAec - Q101Optimos
BSC16DN25NS3G


MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
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Infineon 17251
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AUD 1.6721
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10.9 A250 V165 mOhmsN - Channel 2 V- 55 C+ 150 C62.5 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V8.6 nCEnhancement Optimos
NCEP40T11G


MOSFET N Trench 40V 110A (Tc) 2.2V @ 250uA 2.8 mΩ @ 55A,10V DFN 5x6-8L RoHS
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NCE Power 17237
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AUD 0.3821
Multiples of: 1

                   
STP75NF75


Transistor: N-MOSFET; unipolar; 75V; 70A; 300W; TO220-3
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STMicroelectronics 17235
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AUD 0.7483
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STF13N60M2


Transistor: N-MOSFET; unipolar; 600V; 7A; 25W; TO220FP
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STMicroelectronics 17232
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AUD 0.4499
Multiples of: 1

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