MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML6244TRPBF


MOSFET N Trench 20V 6.3A 1.1V @ 10uA 21 mΩ @ 6.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 331740
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AUD 0.114
Multiples of: 3000

            Hexfet®      
AON7524


MOSFET DFN_3x3mm RoHS
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Alpha & Omega 17763
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AUD 0.3609
Multiples of: 1

                   
CPH3456-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 17741
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AUD 0.14
Multiples of: 1

3.5 A20 V54 mOhmsn - channel 400 mV + 150 C1 Wsmd/smtSOT - 23 - 3Cut Tapesi1 channel12 V2.8 nCenhancement  
IRFR9310TRLPBF-BE3


MOSFET 400V P-CH HEXFET MOSFET D
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Vishay 17667
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AUD 0.9303
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1.8 A400 V7 OhmsP - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V13 nCEnhancement  
IRFBE20PBF


N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 17660
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AUD 0.9754
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   n - channel  - 55 C+ 150 C through holeTO - 220 - 3Tubesi      
IPD60N10S4L-12


Infineon Technologies MOSFET N-Ch 100V 60A DPAK-2
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Infineon 17509
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AUD 0.9382
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60 A100 V9.8 mOhmsN - Channel 1.6 V- 55 C+ 175 C94 WSmd/SmtPG - TO 252 - 3 - 313Reel-1 Channel+/- 16 V38 nCEnhancementAec - Q101 
FDME905PT


MOSFET -12V P-Channel PowerTrench MOSFET
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ON Semiconductor 14668
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AUD 0.3426
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8 A12 V22 mOhmsp - channel  - 55 C+ 150 C700 mWsmd/smtMICRO - FET 1.6 x 1.6Reelsi1 channel8 V   powertrench
IRLR120NTRPBF


MOSFET N Trench 100V 10A 2V @ 250uA 185 mΩ @ 6A,10V TO-252-2 (DPAK) RoHS
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Infineon 14094
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AUD 0.2585
Multiples of: 5

11 A100 V265 mOhmsN - Channel  - 55 C+ 175 C39 WSmd/SmtDPAKReelSi1 Channel16 V13.3 nCEnhancement  
AOD4185(UMW)


TO-252 MOSFETs ROHS
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Youtai 4743
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AUD 0.1443
Multiples of: 5

                   
IRF630PBF


N-Channel 200 V 9A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 258
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AUD 0.7797
Multiples of: 1

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