MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TQM2N7002DCU6 RFG


MOSFETs 60V, 0.26A, Dual N-Channel Small-signal MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 17460
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AUD 0.1065
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260 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C376 mWSMD/SMTSOT - 363Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SI3443CDV-T1-GE3


MOSFET -20V Vds 12V Vgs TSOP-6
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Vishay 17460
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AUD 0.171
Multiples of: 3000

         Smd/SmtTSOP - 6Cut TapeSi     Trenchfet
SI1922EDH-T1-GE3


MOSFET 20V 1.3A 1.25W
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Vishay 17460
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AUD 0.2138
Multiples of: 3000

1.3 A20 V0.198 OhmsN - Channel8 V1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 363 - 6ReelSi2 Channel4.5 V1.6 nCEnhancement Trenchfet
NTMFS4941NT1G


MOSFET NFET SO8FL 30V
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ON Semiconductor 17460
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AUD 0.5776
Multiples of: 1

47 A30 V9 mOhmsn - channel  - 55 C+ 150 C2.56 Wsmd/smtSO - 8FLReelsi1 channel20 V    
SI7489DP-T1-GE3


P-Channel 100 V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 17460
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AUD 1.6772
Multiples of: 3000

28 A100 V41 mOhmsP - Channel 1 V- 55 C+ 150 C83 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel- 10 V106 nCEnhancement Trenchfet
NVMFD024N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor 17460
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AUD 1.714
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           Cut Tape       
BSS138PW.115


Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SOT323
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Nexperia 17438
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AUD 0.1711
Multiples of: 1

                   
TQM2N7002CX RFG


MOSFETs 60V, 0.38A, Single N-Channel Small-signal MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 17435
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AUD 0.0663
Multiples of: 1

380 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C806 mWSMD/SMTSOT - 23Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SSM3K131TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=6.0A RDSON=0.0415Ohm @ 4.5V in UFM package
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Toshiba 17435
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AUD 0.2788
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6 A30 V27.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtUFM - 3Cut TapeSi1 Channel20 V10.1 nCEnhancement U - Mosiv
DMN2040U-13


MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K
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Diodes Incorporated 17417
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AUD 0.1083
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6 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.36 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel12 V7.5 nCEnhancement  
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