MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138W-7-F


Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-323 T/R
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Diodes Incorporated 19880
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AUD 0.4091
Multiples of: 5

200 mA50 V3.5 OhmsN - Channel 500 mV- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V Enhancement  
WNM2030


SOT-723 MOSFETs ROHS
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TECH PUBLIC 17227
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AUD 0.0382
Multiples of: 20

                   
SI3493BDV-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 17197
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AUD 0.6731
Multiples of: 1

8 A20 V27.5 mOhmsP - Channel 900 mV- 55 C+ 150 C2.97 WSMD/SMTTSOP - 6Cut Tape , ReelSi1 Channel- 8 V , + 8 V26.2 nCEnhancement  
DMP3014SFDE-13


MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T and R 10K
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Diodes Incorporated 17185
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AUD 0.2923
Multiples of: 1

11.4 A30 V13.5 mOhmsP - Channel 2.6 V- 55 C+ 150 C2.2 WSMD/SMTU - DFN2020 - 6Reel , Cut TapeSi1 Channel- 25 V , + 25 V18 nCEnhancement  
JSM4953


30V 5.3A 54mΩ@10V,5.3A 2W 1.7V@250uA 70pF@15V 2 P-Channel 528pF@15V 6nC@5V +150℃@(Tj) SOP-8 MOSFETs ROHS
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JSMSEMI 17159
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AUD 0.0783
Multiples of: 10

                   
NSS085N100S


100V 100A 7.5m@10V,2A 2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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NH 17154
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AUD 0.3444
Multiples of: 5

                   
CJ2301-ES


20V 3A 1W 57m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 17149
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AUD 0.0224
Multiples of: 20

                   
HSBB6113


60V 13A 90mΩ@10V,10A 2W 2.5V@250uA 50pF@15V P Channel 1.08nF@15V 11.8nC@4.5V -55℃~+150℃@(Tj) PRPAK3x3 MOSFETs ROHS
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HUASHUO 17139
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AUD 0.2521
Multiples of: 5

                   
TQM2N7002CU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17136
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AUD 0.0644
Multiples of: 1

310 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C568 mWSMD/SMTSOT - 323Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
BSS138BKS,115


NXP Semiconductors MOSFET 60 V, 320 mA dual N-ch Trench MOSFET
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Nexperia 3079
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AUD 0.099
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V0.7 nCEnhancement  
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