MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot DMN1150UFB-7B


Diodes Incorporated MOSFET N-CH MOSFET 12V
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Diodes Incorporated 17467
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.0787

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1.41 A12 V210 mOhmsN - Channel 350 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 2ReelSi1 Channel6 V1.5 nCEnhancement  
TQM2N7002CU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17460
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between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.0716

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310 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C568 mWSMD/SMTSOT - 323Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SI1062X-T1-GE3


MOSFET 20V .5A NCH
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Vishay 17460
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.1028

Multiples of: 3000

500 mA20 V350 mOhmsN - Channel8 V0.4 v to 1 V- 55 C+ 150 C220 mWSmd/SmtSC - 89 - 3Reel   1 nCEnhancement Trenchfet
TQM2N7002DCU6 RFG


MOSFETs 60V, 0.26A, Dual N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17460
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between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.1065

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260 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C376 mWSMD/SMTSOT - 363Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
2N7002


Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
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Taitron 17460
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.1305

Multiples of: 3000

                   
BSL802SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
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Infineon 17460
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.3385

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            optimos 2      
NTMFS4941NT1G


MOSFET NFET SO8FL 30V
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ON Semiconductor 17460
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.5431

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47 A30 V9 mOhmsn - channel  - 55 C+ 150 C2.56 Wsmd/smtSO - 8FLReelsi1 channel20 V    
STL90N6F7


MOSFET N-channel 60 V, 0.0046 Ohm typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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STMicroelectronics 17460
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between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.9832

Multiples of: 3000

90 A60 V5.4 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V25 nCEnhancement Stripfet
NVMFD024N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor 17460
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between Thu. 19 Feb to Mon. 23 Feb
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AUD 1.714

Multiples of: 1

           Cut Tape       
FDMC007N08LCDC


MOSFET FET 80V 64A 6.8 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 17460
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 2.6623

Multiples of: 3000

64 A80 V6.8 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V44 nCEnhancement  
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