MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMS6004FFQTA


MOSFET 60V N-Channel 500mohm 1.3A 90mJ
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Diodes Incorporated 20688
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AUD 0.527
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1.3 A60 V350 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSmd/SmtSOT - 23F - 3ReelSi1 Channel5 V EnhancementAec - Q101Intellifet
2N7000_D74Z


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
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ON Semiconductor 17937
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AUD 0.1913
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200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Ammo PackSi1 Channel20 V Enhancement  
IPG20N04S4L-11


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 17898
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AUD 0.6617
Multiples of: 1

20 A40 V11.6 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel16 V  Aec - Q101Optimos
DMP1045UQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 17888
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AUD 0.1396
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5.2 A12 V26 mOhmsP - Channel 300 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V15.8 nCEnhancementAec - Q101 
IRF1010ESTRLPBF


MOSFET MOSFT 60V 83A 12mOhm 86.6nC
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Infineon 17848
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AUD 1.3375
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84 A60 V12 mOhmsN - Channel 4 V- 55 C+ 175 C200 WSmd/SmtD2PAKReelSi1 Channel20 V130 nC   
AUIRFS8409TRL


Trans MOSFET N-CH 40V 409A Automotive 3-Pin(2+Tab) D2PAK T/R
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Infineon 17848
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AUD 5.8036
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195 A40 V970 uOhmsN - Channel    375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel 300 nC Aec - Q101Coolirfet
IRFBE30LPBF


MOSFET N-Chan 800V 4.1 Amp
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Vishay 17795
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AUD 2.0079
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   N - Channel  - 55 C+ 150 C Through HoleTO - 262TubeSi      
AUIRLR3636TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
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Infineon 17755
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AUD 2.1938
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99 A60 V8.3 mOhmsn - channel    143 Wsmd/smtDPAK - 3Reelsi1 channel16 V33 nC aec - q101 
BSS138


50V 0.22A 0.35W 3.50Ω@10V,0.22A 1.5V@1mA 6pF@25V N Channel 27pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 17654
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AUD 0.0139
Multiples of: 20

                   
IRF4905(UMW)


TO-220 MOSFETs ROHS
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Youtai 15589
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AUD 0.3709
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