MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMP4A16GTA


MOSFET 40V P-Chnl UMOS
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Diodes Incorporated 18430
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AUD 0.5
Multiples of: 1000

6.4 A40 V60 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V26.1 nCEnhancement  
FDC608PZ


Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
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ON Semiconductor 17460
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AUD 0.2213
Multiples of: 3000

5.8 A20 V30 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.6 WSMD/SMTSSOT - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V23 nCEnhancement PowerTrench
SI2377EDS-T1-GE3


MOSFET -20V Vds 8V Vgs SOT-23
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Vishay 17460
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AUD 0.2402
Multiples of: 3000

4.4 A20 V61 mOhmsP - Channel 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V14 nCEnhancement Trenchfet
NTGS5120PT1G


MOSFET PFET TSOP6 60V 2.5A 110mOhm
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ON Semiconductor 17460
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AUD 0.2673
Multiples of: 1

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
BSL372SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 2A; 2W; TSOP6
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Infineon 17460
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AUD 0.3046
Multiples of: 1

            optimos      
BSL802SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 7.5A; 2W; TSOP6
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Infineon 17460
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AUD 0.3046
Multiples of: 1

            optimos 2      
DMP6110SVT-7


MOSFET 60V P-Ch Enh FET 60Vds 20Vgs
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Diodes Incorporated 17460
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AUD 0.3425
Multiples of: 3000

7.3 A60 V105 mOhmsP - Channel 3 V- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6Cut TapeSi1 Channel20 V17.2 nCEnhancement  
IPU80R1K4P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
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Infineon 17460
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AUD 0.6248
Multiples of: 1

            Coolmos P7      
IRFR24N15DTRPBF


Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
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Infineon 15520
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AUD 0.6793
Multiples of: 2000

24 A150 V95 mOhmsN - Channel 5 V + 175 C140 WSmd/SmtD2PAKReelSi1 Channel 45 nC   
NDC7001C


Transistor: N/P-MOSFET; unipolar; 60/-60V; 0.51/0.34A; 0.96W
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ON Semiconductor 2910
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AUD 0.273
Multiples of: 3000

                   
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