MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2302CDS-T1-GE3


N-Channel 20 V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Vishay 50561
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AUD 0.1034
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2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
SIR104LDP-T1-RE3


MOSFET N-CHANNEL 100 V
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Vishay 18262
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AUD 1.276
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TSM170N06CP ROG


MOSFET 60V 38A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18170
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AUD 1.3471
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38 A60 V15 mOhmsN - Channel 1.2 V- 55 C+ 150 C46 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V15 nCEnhancement  
HP8K22TB


MOSFET 30V Nch+Nch Si MOSFET
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ROHM 18137
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AUD 0.8219
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27 A , 57 A30 V6.7 mOhms , 3.6 mOhmsN - Channel 1.3 V- 55 C+ 150 C3 WSmd/SmtHSOP - 8Cut TapeSi2 Channel20 V10 nC , 16.8 nCEnhancement  
NDT2955


SOT-223 MOSFETs ROHS
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TECH PUBLIC 17954
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AUD 0.4554
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TSM650P03CX RFG


MOSFET -30V, -4.1A, Single P-Channel Power MOSFET
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Taiwan Semiconductor 17893
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AUD 0.1587
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4.1 A30 V55 mOhmsP - Channel 400 mV-+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 10 V8 nCEnhancement  
DMP3099L


SOT23 MOSFETs ROHS
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TECH PUBLIC 17411
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AUD 0.0486
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IRFB4115PBF


Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
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Infineon 16113
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AUD 0.8351
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   N - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
MEM2301XG


MOSFET P Trench 20V 2.8A 1V @ 250uA 110 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Micro One 14103
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AUD 0.0351
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STD6N95K5


MOSFET N-Ch 950V 1 Ohm 9A Zener SuperMESH 5
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STMicroelectronics 8321
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AUD 0.8301
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9 A950 V1.25 OhmsN - Channel  - 55 C+ 150 C90 WSmd/SmtDPAKReelSi1 Channel30 V13 nC  Mdmesh
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