MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMN3B14FTA


N-Channel 30 V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 17995
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AUD 0.3544
Multiples of: 1

3.5 A30 V140 mOhmsN - channel  - 55 C150 C1 WSmdsmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
IPG20N04S4L-11


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 17995
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AUD 0.6827
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20 A40 V11.6 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel16 V  Aec - Q101Optimos
AUIRF1324


International Rectifier MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms
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Infineon 17993
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AUD 3.4226
Multiples of: 183

353 A24 V1.5 mOhmsN - Channel  - 55 C 300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V160 nCEnhancementAec - Q101 
FDD13AN06A0_F085


Fairchild Semiconductor MOSFET Trans N-Ch 60V 50 A 3-Pin 2Tab
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ON Semiconductor 17955
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AUD 1.0598
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50 A60 V13.5 mOhmsN - Channel20 V - 55 C+ 175 C115 WSmd/SmtDPAK - 2ReelSi1 Channel20 V Enhancement  
2N7002W


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 17945
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AUD 0.0186
Multiples of: 20

                   
DMN2004DMK-7


MOSFET Dual N-Channel
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Diodes Incorporated 17823
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AUD 0.2357
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 26 - 6Reel       
TK72E12N1,S1X


Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044
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Toshiba 17799
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AUD 1.1192
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179 A120 V3.6 mOhmsN - Channel20 V2 v to 4 V + 150 C255 WThrough HoleTO - 220 - 3ReelSi1 Channel10 V130 nCEnhancement  
IRFBE30LPBF


MOSFET N-Chan 800V 4.1 Amp
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Vishay 17795
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AUD 2.0079
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   N - Channel  - 55 C+ 150 C Through HoleTO - 262TubeSi      
AUIRLR3636TRL


International Rectifier MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
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Infineon 17755
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AUD 2.1938
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99 A60 V8.3 mOhmsn - channel    143 Wsmd/smtDPAK - 3Reelsi1 channel16 V33 nC aec - q101 
IPD70R1K4P7SAUMA1


Transistor: N-MOSFET; unipolar; 700V; 2.5A; 22.7W; PG-TO252-3
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Infineon 17734
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AUD 0.3073
Multiples of: 1

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