MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFR014TRPBF-BE3


MOSFET 60V N-CHANNEL
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Vishay 18372
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AUD 1.0731
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7.7 A60 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V11 nCEnhancement  
DMHC4035LSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 18360
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AUD 0.7108
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4.5 A , 3.7 A40 V26 mOhms , 49 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Cut TapeSi4 Channel20 V12.5 nC , 11.1 nCEnhancementAec - Q101 
FDC6327C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 18323
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AUD 0.0991
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AO3414


SOT-23 MOSFETs ROHS
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TECH PUBLIC 18293
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AUD 0.0503
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BSZ100N06NS


Infineon Technologies MOSFET
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Infineon 18291
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AUD 0.575
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40 A60 V10 mOhmsN - Channel 2.1 V- 55 C+ 150 C36 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
SSM6P41FE(TE85L,F)


MOSFET LowON Res MOSFET ID=-0.72A VDSS=-20V
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Toshiba 18271
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AUD 0.1904
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720 mA20 V300 mOhmsP - Channel 1 V + 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V1.76 nCEnhancement  
SI2310-HXY


60V 3A 1.7W 86mΩ@10V,3A N Channel SOT-23 MOSFETs ROHS
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HXY MOS 18204
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AUD 0.0359
Multiples of: 10

                   
TSM170N06CP ROG


MOSFET 60V 38A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18170
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AUD 1.3471
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38 A60 V15 mOhmsN - Channel 1.2 V- 55 C+ 150 C46 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V15 nCEnhancement  
IRFBE20PBF


N-Channel 800 V 1.8A (Tc) 54W (Tc) Through Hole TO-220AB
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Vishay 17779
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AUD 0.9539
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   n - channel  - 55 C+ 150 C through holeTO - 220 - 3Tubesi      
ZXMN3B14FTA


N-Channel 30 V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 9526
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AUD 0.3333
Multiples of: 1

3.5 A30 V140 mOhmsN - channel  - 55 C150 C1 WSmdsmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
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