MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2240UWQ-7


Diodes Incorporated MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS
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Diodes Incorporated 58200
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AUD 0.4972
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- 1.5 A- 20 V134 mOhmsP - Channel - 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel12 V EnhancementAec - Q101 
FDMC86262P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor 40740
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AUD 0.8998
Multiples of: 3000

- 2 A- 150 V541 mOhmsP - Channel - 4 V- 55 C+ 150 C40 WSmd/SmtMLP - 8ReelSi1 Channel+/- 25 V9.1 nCEnhancement Powertrench
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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Infineon 18351
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AUD 0.0469
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            Optimos      
PMZB950UPELYL


MOSFET 20 V, P-channel Trench MOSFET
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Nexperia 18351
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AUD 0.0911
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           Cut TapeSi      
SSM6P41FE(TE85L,F)


MOSFET LowON Res MOSFET ID=-0.72A VDSS=-20V
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Toshiba 18271
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AUD 0.1904
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720 mA20 V300 mOhmsP - Channel 1 V + 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V1.76 nCEnhancement  
DMG3406L-13


MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A
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Diodes Incorporated 18071
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AUD 0.1505
Multiples of: 5

3.6 A30 V25 mOhmsN - Channel 1 V- 55 C+ 150 C770 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V11.2 nCEnhancement  
IPD85P04P407ATMA2


P-Channel 40V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313
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Infineon 15885
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AUD 1.0073
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®Mosfet (Metal Oxide)      
SP010N01BGHTO


100V 370A 1.2m 1 N-Channel TOLL MOSFETs ROHS
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Siliup 11990
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AUD 1.2906
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Hot IPB107N20N3 G


MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3
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Infineon 255
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AUD 1.5109
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88 A200 V9.6 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V87 nCEnhancement Optimos
BSZ100N06NS


Infineon Technologies MOSFET
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Infineon 0
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AUD 0.5241
Multiples of: 5000

40 A60 V10 mOhmsN - Channel 2.1 V- 55 C+ 150 C36 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
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