MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3481C


30V 4.3A 37mΩ@10V,4.3A 1.3W P Channel SOT-23 MOSFETs ROHS
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Alpha & Omega 43242
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AUD 0.0733
Multiples of: 5

                   
BSC040N10NS5


MOSFET N-Ch 100V 100A TDSON-8
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Infineon 18761
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AUD 1.0012
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           Cut Tape       
ECH8657-TL-H


ON Semiconductor MOSFET SWITCHING DEVICE
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ON Semiconductor 18718
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AUD 0.385
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4.5 A35 V59 mOhmsN - Channel     Smd/SmtECH - 8ReelSi      
NTD110N02RT4G


ON Semiconductor MOSFET 24V 110A N-Channel
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ON Semiconductor 18640
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AUD 1.1782
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110 A24 V4.1 mOhmsn - channel20 V - 55 C+ 175 C2.88 Wsmd/smtDPAK - 3Reelsi1 channel20 V enhancement  
IPD122N10N3GATMA1


MOSFET TRENCH >=100V
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Infineon 18433
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AUD 0.9722
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59 A100 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V26 nCEnhancement Optimos
DMG2301L-7


20V 3A 1.5W 120mO@4.5V,2.8A P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 18405
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AUD 0.1038
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- 3 A- 20 V120 mOhmsP - Channel - 1.2 V- 55 C+ 150 C1.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 8 V5.5 nCEnhancement  
TQM2N7002KDCU6 RFG


MOSFETs 60V, 0.33A, Dual N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17911
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AUD 0.0801
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330 mA60 V1.6 OhmsN - Channel 2.5 V- 55 C+ 150 C337 mWSMD/SMTSOT - 363 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.7 nCEnhancementAEC - Q101 
WST3078


MOSFET N & P Trench 30V 3.5A,3A 2.5V @ 250uA 50 mΩ @ 2.7A,10V SOT-23-6 RoHS
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Winsok 16572
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AUD 0.1797
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LSI1012LT1G


MOSFET N Trench 20V 500mA 900mV @ 250uA 700 mΩ @ 600mA,4.5V SOT-23 (SOT-23-3) RoHS
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Leshan 15908
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AUD 0.0251
Multiples of: 20

                   
IRLML0100TRPBF


SOT23 MOSFETs ROHS
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TECH PUBLIC 7401
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AUD 0.0881
Multiples of: 5

                   
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