MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K56ACT,L3F


MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 27869
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AUD 0.0971
Multiples of: 1

1.4 A20 V840 mOhmsN - Channel 400 mV- 55 C+ 150 C500 mWSmd/SmtCST - 3ReelSi1 Channel+/- 8 V1 nCEnhancement  
SIDR668ADP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay 18543
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AUD 2.0743
Multiples of: 1

104 A100 V4.8 mOhmsN - Channel 4 V- 55 C+ 150 C125 WSMD/SMTSO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement TrenchFET, PowerPAK
STP60NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 18495
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AUD 0.8479
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NVTFS5124PLTAG


ON Semiconductor MOSFET
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ON Semiconductor 18389
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AUD 0.4306
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- 6 A- 60 V380 mOhmsP - Channel - 1.5 v to - 2.5 V- 55 C+ 175 C3 WSmd/SmtWDFN - 8ReelSi1 Channel20 V3.5 nCEnhancementAec - Q101 
IRFR014TRPBF-BE3


MOSFET 60V N-CHANNEL
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Vishay 18372
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AUD 1.0731
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7.7 A60 V200 mOhmsN - Channel 4 V- 55 C+ 150 C25 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V11 nCEnhancement  
SI2302S


MOSFET N Trench 20V 3A 1V @ 250uA 80 mΩ @ 1A,2.5V SOT-23 RoHS
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Bourne 18313
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AUD 0.0256
Multiples of: 20

                   
IPP220N25NFDAKSA1


Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
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Infineon 18313
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AUD 4.2857
Multiples of: 1

            Optimos Fd      
AO3480C


30V 6.2A 16mO@10V,6.2A 1.3W N Channel SOT-23 MOSFETs ROHS
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Alpha & Omega 15306
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AUD 0.0625
Multiples of: 5

                   
FDN338P


MOSFET P Trench 20V 1.6A 1.5V @ 250uA 115 mΩ @ 1.6A,4.5V SOT-23 RoHS
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Youtai 2813
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AUD 0.0234
Multiples of: 20

                   
ZXMP7A17GQTA


MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm
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Diodes Incorporated 0
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AUD 0.4077
Multiples of: 1

2.6 A70 V160 mOhmsP - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel20 V18 nCEnhancementAec - Q101 
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