MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K35CT,L3F


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=0.18A RDSON=3.0O @ 4.0V in CST3 package
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Toshiba 17779
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AUD 0.0534
Multiples of: 1

180 mA20 V1.1 OhmsN - Channel 1 V- 55 C+ 150 C100 mWSMD/SMT Cut Tape , ReelSi1 Channel- 10 V , + 10 V-Enhancement  
CPH3456-TL-W


MOSFET NCH 1.8V DRIVE SERIE
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ON Semiconductor 17741
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AUD 0.14
Multiples of: 1

3.5 A20 V54 mOhmsn - channel 400 mV + 150 C1 Wsmd/smtSOT - 23 - 3Cut Tapesi1 channel12 V2.8 nCenhancement  
FDN306P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 17712
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AUD 0.0604
Multiples of: 10

                   
DMP2215L-7


P-Channel 20 V 2.7A (Ta) 1.08W (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 17663
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AUD 0.0592
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2.7 A20 V100 mOhmsP - Channel 450 mV- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V4.3 nCEnhancement  
AP2045Q


20V 65A 4.6mΩ@4.5V,20A 35W N Channel DFN-8(3x3.1) MOSFETs ROHS
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Quan Li 17658
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AUD 0.1996
Multiples of: 5

                   
Hot IRF5210PBF


MOSFET P Trench 100V 40A 4V @ 250uA 60 mΩ @ 24A,10V TO-220 (TO-220-3) RoHS
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Infineon 17573
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AUD 1.038
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            Hexfet®      
DMN10H220L-7


Diodes Incorporated MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
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Diodes Incorporated 17557
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AUD 0.361
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1.6 A100 V220 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.3 WSmd/SmtSOT23Reel- +/- 16 V8.3 nCEnhancement  
AO3415


20V 4.9A 1.39W 30m@4.5V,4A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 17498
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AUD 0.032
Multiples of: 20

                   
ESD5304D


DFN-10(2.5x1) MOSFETs ROHS
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TECH PUBLIC 16790
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AUD 0.0519
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SI2301


MOSFET SOT23 RoHS
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TWGMC 14414
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AUD 0.0195
Multiples of: 20

                   
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