MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD2P40TM


P-Channel 400 V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
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ON Semiconductor 18356
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AUD 0.7054
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1.56 A- 400 V6.5 OhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi1 Channel30 V Enhancement  
TSM850N06CX RFG


MOSFET 60V 3A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18339
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AUD 0.1886
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BSC039N06NSATMA1


MOSFET MV POWER MOS
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Infineon 18303
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AUD 1.1157
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100 A60 V3.9 mOhmsN - Channel 2.1 V- 55 C+ 150 C69 WSmd/SmtPG - TDSON - 8ReelSi1 Channel10 V27 nCEnhancement Optimos
SI3407-TP


MOSFET P-Channel MOSFET, SOT-23 package
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Micro Commercial Components (MCC) 18300
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AUD 0.1205
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4.1 A30 V50 mOhmsP - Channel 3 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
AO3414


SOT-23 MOSFETs ROHS
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TECH PUBLIC 18293
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AUD 0.0503
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BSZ100N06NS


Infineon Technologies MOSFET
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Infineon 18291
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AUD 0.575
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40 A60 V10 mOhmsN - Channel 2.1 V- 55 C+ 150 C36 WSmd/SmtPG - TSDSON - 8ReelSi1 Channel10 V12 nCEnhancement Optimos
AP2012


20V 12A 9.5mΩ@4.5V,5A 2W 2PCSNChannel(Common Drain) TSSOP-8 MOSFETs ROHS
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Quan Li 18285
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AUD 0.2249
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L2N7002DW1T1G


MOSFET 2 N Channel (Dual) 60V 115mA (Tc) 2V @ 250uA 7.5 Ω @ 500mA,10V SC-88 RoHS
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Leshan 18276
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AUD 0.0201
Multiples of: 20

                   
SSM6P41FE(TE85L,F)


MOSFET LowON Res MOSFET ID=-0.72A VDSS=-20V
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Toshiba 18271
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AUD 0.1904
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720 mA20 V300 mOhmsP - Channel 1 V + 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V1.76 nCEnhancement  
BSP317PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
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Infineon 18263
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AUD 0.4313
Multiples of: 1

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