MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7205TRPBF


MOSFET P Trench 30V 4.6A 3V @ 250uA 70 mΩ @ 4.6A,10V SOIC-8_150mil RoHS
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Infineon 38800
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AUD 0.4412
Multiples of: 4000

4.6 A30 V130 mOhmsP - Channel 3 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V27 nC   
2N7002A-7


N-Channel 60 V 180mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 29517
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AUD 0.0423
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SCH1330-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor 18791
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AUD 0.1693
Multiples of: 1

1.5 A20 V615 mOhmsP - Channel 1.4 V + 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi1 Channel10 V1.7 nCEnhancement  
FDD86326


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 18776
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AUD 1.6027
Multiples of: 1

37 A80 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C62 WSmd/SmtDPAKReelSi1 Channel20 V7.6 nC  Powertrench
SSM10N961L,ELF


MOSFETs 30V N-ch Common drain FET Rss:9.9mOhm Vgs: 10V Pd:0.88W Pkg: TCSPAG
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Toshiba 18772
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AUD 0.4824
Multiples of: 1

 30 V N - Channel 2.3 V + 150 C1.51 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.3 nCEnhancement  
JY3407AX


30V 4.3A 1.6V 1PCSPChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 18711
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AUD 0.0437
Multiples of: 10

                   
IPD70R900P7SAUMA1


Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
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Infineon 18695
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AUD 0.3365
Multiples of: 1

            Coolmos      
2N7002KS6-T


MOSFETs
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Rectron 18624
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AUD 0.0581
Multiples of: 1

250 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSMD/SMTSOT363 - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V1.7 nCEnhancement  
DMN3401LVQ-13


MOSFETs MOSFET BVDSS: 25V-30V SOT563 T&R 10K
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Diodes Incorporated 18206
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AUD 0.0739
Multiples of: 1

           Reel , Cut TapeSi      
SSM3K37MFV,L3F


MOSFET Small-signal FET 0.25A 20V 12pF
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Toshiba 13960
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AUD 0.0331
Multiples of: 1

250 mA20 V2.2 OhmsN - Channel 350 mV + 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel4.5 V Enhancement  
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