MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML0040TR(UMW)


SOT-23 MOSFETs ROHS
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Youtai 18683
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AUD 0.0517
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IPW65R110CFDFKSA1


Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO247-3
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Infineon 18643
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AUD 8.0357
Multiples of: 1

            Coolmos      
DMHC4035LSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 18636
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AUD 0.7333
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4.5 A , 3.7 A40 V26 mOhms , 49 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Cut TapeSi4 Channel20 V12.5 nC , 11.1 nCEnhancementAec - Q101 
IRFS4310ZTRLPBF


MOSFET N Trench 100V 120A 4V @ 150uA 6 mΩ @ 75A,10V TO-263-2 RoHS
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Infineon 18624
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AUD 1.4766
Multiples of: 800

127 A100 V4.8 mOhmsN - Channel    250 WSmd/SmtD2PAKReelSi1 Channel20 V120 nC   
FDPF5N50NZ


MOSFET UniFET2 500V N-chan
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ON Semiconductor 18624
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AUD 1.5335
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4.5 A500 V1.38 OhmsN - Channel 5 V- 55 C+ 125 C30 WThrough HoleTO - 220FTubeSi1 Channel25 V9 nC  Unifet
SIRA18BDP-T1-GE3


MOSFET N-Channel 30 V D-S MOSFET
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Vishay 18607
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AUD 0.2489
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40 A30 V0.00683 OhmsN - Channel 2.4 V- 55 C+ 150 C17 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel- 16 v , 20 V12.2 nCEnhancement Trenchfet
BSS806NEH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
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Infineon 18580
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AUD 0.089
Multiples of: 1

            Optimos 2      
FDPC8016S


Fairchild Semiconductor MOSFET
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ON Semiconductor 18555
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AUD 1.3808
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60 A , 100 A25 V1.5 mOhms , 3.9 mOhmsn - channel12 V1.3 v , 1.5 V- 55 C+ 150 C21 w , 42 Wsmd/smtPowerclip - 33 - 8Reelsi2 channel12 V25 nC , 67 nCenhancement powertrench syncfet power clip
APG250N01Q


100V 25A 20mΩ@20V,25A null PDFN3x3-8L MOSFETs ROHS
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Quan Li 18551
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AUD 0.3981
Multiples of: 5

                   
IRLML9303(UMW)


SOT-23 MOSFETs ROHS
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Youtai 18497
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AUD 0.0579
Multiples of: 10

                   
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