MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP4050SSS-13


MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 19400
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AUD 0.4397
Multiples of: 2500

4.4 A40 V50 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V13.9 nCEnhancement  
Hot IRF7306TRPBF


Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
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Infineon 19400
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AUD 0.5131
Multiples of: 4000

3.6 A30 V100 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V16.7 nC   
NCV8402ASTT1G


Power Switch/Driver 1:1 N-Channel 2A SOT-223 (TO-261)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 19400
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AUD 0.5886
Multiples of: 1000

2 A55 V200 mOhmsN - Channel 1.3 V- 40 C+ 150 C1.7 WSmd/SmtSOT - 223 - 3Cut TapeSi2 Channel10 V EnhancementAec - Q101 
FDS8858CZ


MOSFET 30V Dual N & P-Ch PowerTrench MOSFET
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ON Semiconductor 19400
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AUD 0.6474
Multiples of: 2500

8.6 A30 v , - 60 V17 mOhms , 20.5 mOhmsN - Channel, P - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8Cut TapeSi2 Channel20 v , 25 V Enhancement Powertrench
SQJ403BEEP-T1_BE3


MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 19400
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AUD 1.0764
Multiples of: 1

30 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V75 nCEnhancement  
BSC109N10NS3GATMA1


MOSFET N Trench 100V 63A (Tc) 3.5V @ 45uA 10.9 mΩ @ 46A,10V PG-TDSON-8 RoHS
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Infineon 19400
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AUD 1.2687
Multiples of: 5000

            Optimos 3      
BSC052N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 95A; 83W; PG-TDSON-8
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Infineon 19400
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AUD 1.1843
Multiples of: 5000

            Optimos 5      
BSC900N20NS3GATMA1


Transistor: N-MOSFET; unipolar; 200V; 15.2A; 62.5W; PG-TDSON-8
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Infineon 14550
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AUD 0.9888
Multiples of: 5000

            Optimos 3      
STD25NF10LT4


Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
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STMicroelectronics 9700
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AUD 0.8489
Multiples of: 2500

            Supermesh      
BSC059N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
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Infineon 4850
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AUD 0.4011
Multiples of: 5000

            Optimos 3      
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