MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002W-7-F-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 19642
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AUD 0.0179
Multiples of: 50

                   
FDD8782


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 19642
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AUD 0.8142
Multiples of: 1

35 A25 V8.5 mOhmsn - channel  - 55 C+ 175 C50 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
BSC019N02KS G


Infineon Technologies MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
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Infineon 19545
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AUD 1.6045
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30 A20 V1.95 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSON - 8ReelSi1 Channel12 V Enhancement Optimos
TQM123KCX RFG


MOSFETs 100V, 0.17A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 19465
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AUD 0.0566
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170 mA100 V6 OhmsN - Channel 2.5 V- 55 C+ 150 C328 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V2 nCEnhancementAEC - Q101 
PJX138K_R1_00001


MOSFET /8KB/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-50TEMN/NF50TE-QI01/PJ///
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Panjit 19439
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AUD 0.0864
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           Cut Tape       
WSD40L60DN56


40V 60A 50W 10mΩ@10V,15A 2.5V@250uA P Channel DFN-8(5x6) MOSFETs ROHS
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Winsok 19363
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AUD 0.4153
Multiples of: 1

                   
NTZD3155CT1G


MOSFET 20V 540mA/-430mA Complementary w/ESD
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ON Semiconductor 15520
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AUD 0.1231
Multiples of: 1

540 mA20 V550 mOhms , 900 mOhmsN - Channel, P - Channel  - 55 C+ 150 C250 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel6 V Enhancement  
2300


SOT-23 MOSFETs ROHS
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HL 14550
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AUD 0.0145
Multiples of: 50

                   
IPG20N10S4L35ATMA1


Infineon Technologies MOSFET MOSFET
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Infineon 13337
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AUD 0.9364
Multiples of: 1

20 A , 20 A100 v , 100 V29 mOhms , 29 mOhmsN - Channel+/- 16 V1.6 V- 55 C+ 175 C43 WSmd/SmtPG - TDSON - 8 - 4Reel-2 Channel16 V13.4 nCEnhancementAec - Q101 
AO3400A


SOT-23-3L MOSFETs ROHS
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JSMSEMI 6518
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AUD 0.0274
Multiples of: 20

                   
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