MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP22D4UFO-7B


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 19172
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between Wed. 07 Oct to Fri. 09 Oct
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AUD 0.2231

Multiples of: 1

530 mA20 V1.9 OhmsP - Channel 1 V- 55 C+ 150 C820 mWSmd/SmtX2 - DFN0604 - 3Cut TapeSi1 Channel8 V400 pCEnhancement  
BSS315PH6327XT


MOSFET OptiMOS -P 2 Small Signal Transistor
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Infineon 19125
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between Wed. 07 Oct to Fri. 09 Oct
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AUD 0.1333

Multiples of: 1

1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.3 nCEnhancementAec - Q101 
CJU50P06


60V 50A 25mΩ@10V 3V P Channel TO-252-2 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology 19104
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between Thu. 15 Oct to Tue. 20 Oct
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AUD 0.5126

Multiples of: 5

                   
AONR21321


30V 24A 16.5mΩ@12A,10V 2.3V@250uA P Channel DFN-8(3x3) MOSFETs ROHS
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Alpha & Omega 19016
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between Thu. 15 Oct to Tue. 20 Oct
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AUD 0.1527

Multiples of: 5

                   
ISC012N04LM6ATMA1


MOSFET TRENCH <= 40V
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Infineon 18988
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between Wed. 07 Oct to Fri. 09 Oct
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AUD 0.9004

Multiples of: 1

238 A40 V1.2 mOhmsN - Channel 2.3 V- 55 C+ 175 C125 WSMD/SMTTDSON - FL - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V25 nCEnhancement  
TSM05N03CW RPG


MOSFET 30V 5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18904
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between Wed. 07 Oct to Fri. 09 Oct
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AUD 0.3614

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           Cut Tape       
SCH1330-TL-W


MOSFET PCH 1.8V DRIVE SERIE
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ON Semiconductor 18791
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between Thu. 01 Oct to Wed. 07 Oct
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AUD 0.1645

Multiples of: 1

1.5 A20 V615 mOhmsP - Channel 1.4 V + 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi1 Channel10 V1.7 nCEnhancement  
IRLML5103TRPBF


MOSFET P Trench 30V 760mA 1V @ 250uA 600 mΩ @ 600mA,10V SOT-23 (SOT-23-3) RoHS
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Infineon 16839
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between Thu. 15 Oct to Tue. 20 Oct
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AUD 0.1124

Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
MGSF1N03LT1G


ON Semiconductor MOSFET 30V 2.1A N-Channel
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ON Semiconductor 15781
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between Thu. 15 Oct to Tue. 20 Oct
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AUD 0.1242

Multiples of: 5

2.1 A30 V125 mOhmsN - Channel20 V1 V- 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V6 nCEnhancement  
IPG20N04S4L11ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon 4539
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between Thu. 01 Oct to Wed. 07 Oct
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AUD 0.81

Multiples of: 1

   Dual N Channel      TDSON - 8Reel       
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