MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQT5P10TF


Transistor: P-MOSFET; unipolar; -100V; -0.8A; 2W; SOT223
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ON Semiconductor 19400
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AUD 0.4421
Multiples of: 4000

   P Channel               
SI4559ADY-T1-E3


Mosfet Array N and P-Channel 60V 5.3A, 3.9A 3.1W, 3.4W Surface Mount 8-SOIC
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Vishay 19400
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AUD 0.4722
Multiples of: 2500

4.3 A60 V46 mOhms , 100 mOhmsN - Channel, P - Channel20 V - 55 C+ 150 C2 WSmd/SmtSO - 8Reel    Enhancement  
NCV8402ASTT1G


Power Switch/Driver 1:1 N-Channel 2A SOT-223 (TO-261)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 19400
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AUD 0.626
Multiples of: 1000

2 A55 V200 mOhmsN - Channel 1.3 V- 40 C+ 150 C1.7 WSmd/SmtSOT - 223 - 3Cut TapeSi2 Channel10 V EnhancementAec - Q101 
STD25NF10LT4


Transistor: N-MOSFET; unipolar; 100V; 25A; 100W; DPAK
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STMicroelectronics 19400
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AUD 0.9028
Multiples of: 2500

            Supermesh      
SQJ403BEEP-T1_BE3


MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 19400
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AUD 1.0764
Multiples of: 1

30 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V75 nCEnhancement  
STD5NK60ZT4


MOSFET N-Ch 600 Volt 5 Amp Zener SuperMESH
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STMicroelectronics 19400
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AUD 1.3821
Multiples of: 2500

5 A600 V1.6 OhmsN - Channel30 V - 55 C+ 150 C90 WSmd/SmtDPAK - 3ReelSi1 Channel30 V Enhancement Supermesh
BUK9240-100A,118


N-Channel 100 V 33A (Tc) 114W (Tc) Surface Mount DPAK
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Nexperia 19400
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AUD 2.2143
Multiples of: 1

33 A100 V38.6 mOhmsN - Channel10 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel10 V Enhancement  
Hot IRFP150NPBF


Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
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Infineon 19367
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AUD 0.6915
Multiples of: 1

39 A100 V36 mOhmsN - Channel    140 WThrough HoleTO - 247ACTubeSi1 Channel20 V73.3 nC   
AP2305


MOSFET P Trench 20V 3.5A 900mV @ 250uA 65 mΩ @ 3.5A,4.5V SOT-23 RoHS
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Quan Li 19351
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AUD 0.0667
Multiples of: 20

                   
AUIRF4905STRL


Trans MOSFET P-CH Si 55V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
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Infineon 19351
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AUD 6.5885
Multiples of: 1

- 70 A- 55 V20 mOhmsP - Channel20 V- 4 V- 55 C+ 150 C170 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V120 nC Aec - Q101 
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