MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3400A


30V 5.8A 1PCSNChannel SOT-23-3L MOSFETs ROHS
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GOODWORK 29953
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AUD 0.0283
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IRFBG30PBF


N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 21140
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AUD 1.0864
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3.1 A1 kV5 OhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V80 nCEnhancement  
SI1902CDL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
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Vishay 19996
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AUD 0.6038
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1.1 A20 V235 mOhmsN - Channel 1.5 V- 55 C+ 150 C420 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V2 nCEnhancement TrenchFET
DMT69M8LFV-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 19987
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AUD 0.4308
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          Powerdi3333 - 8Cut TapeSi      
BSR302NL6327HTSA1


Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
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Infineon 19930
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AUD 0.1689
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            optimos 2      
APM2305AC


SOT-23 MOSFETs ROHS
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TECH PUBLIC 19923
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AUD 0.0675
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ISC079N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 19858
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AUD 2.7814
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95 A150 V7.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C165 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
SI2302DDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 19817
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AUD 0.0769
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2.9 A20 V57 mOhmsN - Channel 400 mV- 55 C+ 150 C860 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.5 nCEnhancement Trenchfet
RZM001P02T2L


P-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount VMT3
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ROHM 18430
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AUD 0.0417
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- 100 mA- 20 V40 OhmsP - Channel - 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 723 - 3Reel-1 Channel+/- 10 V Enhancement  
AONR21357-ES


30V 50A 8m@4.5V,15A 1V@250uA 1PCSPChannel PDFN-8L(3x3) MOSFETs ROHS
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ElecSuper 2235
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AUD 0.1705
Multiples of: 5

                   
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