MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQP6N60C


Fairchild Semiconductor MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 19400
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AUD 0.8989
Multiples of: 1

5.5 A600 V2 Ohmsn - channel30 V - 55 C+ 150 C125 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
FQD8P10TM_F085


Fairchild Semiconductor MOSFET 100V P-Channel QFET
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ON Semiconductor 19400
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AUD 0.937
Multiples of: 2500

6.6 A100 V530 mOhmsP - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 30 V , 30 V15 nCEnhancementAEC - Q101QFET
STP19NF20


Transistor: N-MOSFET; unipolar; 200V; 9.45A; 90W; TO220-3
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STMicroelectronics 19400
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AUD 1.0089
Multiples of: 1

                   
SQJ403BEEP-T1_BE3


MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 19400
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AUD 1.0764
Multiples of: 1

30 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V75 nCEnhancement  
Hot BSC057N08NS3GATMA1


MOSFET N Trench 80V 16A 3.5V @ 73uA 5.7 mΩ @ 50A,10V PG-TDSON-8 RoHS
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Infineon 19400
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AUD 1.1964
Multiples of: 5000

100 A80 V5.7 mOhmsN - Channel 2 V- 55 C+ 150 C114 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V42 nCEnhancement  
BSC016N06NSATMA1


Infineon Technologies MOSFET N-Ch 60V 100A DSON-8 OptiMOS
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Infineon 19400
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AUD 1.2768
Multiples of: 5000

100 A60 V1.6 mOhmsN - Channel 2.8 V- 55 C+ 150 C139 WSmd/SmtDSON - 8Reel  20 V71 nC  Optimos
FDS3572


MOSFET 80V N-Channel PowerTrench
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ON Semiconductor 19400
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AUD 3.25
Multiples of: 2500

8.9 A80 V16 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
IRFS4020TRLPBF


Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
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Infineon 19400
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AUD 1.4255
Multiples of: 1

18 A200 V85 mOhmsN - Channel 4.9 V + 175 C100 WSmd/SmtD2PAKReelSi1 Channel 29 nC   
ZXMP10A18GTA


MOSFET 100V P-Chnl UMOS
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Diodes Incorporated 19400
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AUD 1.752
Multiples of: 1000

3.7 A100 V150 mOhmsP - Channel 2 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V26.9 nCEnhancement  
Hot IRFB3206PBF


Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
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Infineon 17626
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AUD 1.2557
Multiples of: 1

210 A60 V2.4 mOhmsN - Channel    300 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
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