MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN63D8L-13


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated 19688
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AUD 0.0471
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350 mA30 V2.8 OhmsN - Channel 1.5 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V900 pCEnhancement  
FDD8782


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 19642
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AUD 0.8655
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35 A25 V8.5 mOhmsn - channel  - 55 C+ 175 C50 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
IXTY48P05T


MOSFET TrenchP Power MOSFET
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IXYS 19618
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AUD 3.3
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48 A50 V30 mOhmsP - Channel     Smd/SmtTO - 252 - 3TubeSi      
2N7002PW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 19615
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AUD 0.0218
Multiples of: 10

                   
DMC4029SK4-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 19573
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AUD 0.3977
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8.3 A , 6.1 A40 V15 mOhms , 33 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C2.9 WSmd/SmtTO - 252 - 4Cut TapeSi2 Channel20 V19.1 nC , 21.5 nCEnhancement  
TM3400CI


SOT-23 MOSFETs ROHS
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Tritech-MOS 19555
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AUD 0.0262
Multiples of: 20

                   
BSC019N02KS G


Infineon Technologies MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
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Infineon 19545
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AUD 1.6045
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30 A20 V1.95 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSON - 8ReelSi1 Channel12 V Enhancement Optimos
SI1308EDL


SOT323 MOSFETs ROHS
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TECH PUBLIC 19482
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AUD 0.0823
Multiples of: 5

                   
BSZ097N04LSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
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Infineon 19428
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AUD 0.4137
Multiples of: 1

            Optimos 3      
NX3020NAKS,115


MOSFET NX3020NAKS/SC-88/REEL7
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Nexperia 19412
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AUD 0.0739
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180 mA30 V2.7 OhmsN - Channel 1.2 V- 55 C+ 150 C1.1 WSmd/SmtTSSOP - 6Reel   0.34 nCEnhancement  
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