MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN601DWKQ-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 20251
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AUD 0.089
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300 mA60 V3 OhmsN - Channel 1 V- 65 C+ 150 C200 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V304 pCEnhancementAec - Q101 
NTUD3169CZT5G


ON Semiconductor MOSFET 20V Mosfet Complementary
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ON Semiconductor 20241
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AUD 0.0726
Multiples of: 1

220 mA20 V1.5 Ohms , 5 OhmsN - Channel, P - Channel8 V - 55 C+ 150 C200 mWSmd/SmtSOT - 963 - 6Reel    Enhancement  
TSM250N02CX RFG


MOSFET 20V, 5.8A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 20200
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AUD 0.1659
Multiples of: 1

5.8 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.7 nCEnhancement  
NTJS4405NT1G


ON Semiconductor MOSFET 25V 1.2A N-Channel
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ON Semiconductor 20146
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AUD 0.0673
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1.2 A25 V299 mOhmsN - Channel  - 55 C+ 150 C630 mWSmd/SmtSC - 88 - 6ReelSi1 Channel8 V Enhancement  
IRLML5103(UMW)


SOT-23 MOSFETs ROHS
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Youtai 20056
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AUD 0.0636
Multiples of: 10

                   
IPD122N10N3GATMA1


MOSFET TRENCH >=100V
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Infineon 20030
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AUD 0.926
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59 A100 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V26 nCEnhancement Optimos
PJE138K_R1_00001


MOSFET /8KT/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-50TBMN/NF50TB-QI01/PJ///
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Panjit 20022
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AUD 0.0542
Multiples of: 1

           Cut Tape       
RZM001P02T2L


P-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount VMT3
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ROHM 19962
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AUD 0.0347
Multiples of: 20

- 100 mA- 20 V40 OhmsP - Channel - 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 723 - 3Reel-1 Channel+/- 10 V Enhancement  
AO4805


SOP-8 MOSFETs ROHS
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TECH PUBLIC 18027
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AUD 0.2124
Multiples of: 5

                   
SIA440DJ-T1-GE3


Vishay Semiconductors MOSFET 40V 26mOhm10V 12A N-CH
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Vishay 5820
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AUD 0.2463
Multiples of: 3000

12 A40 V26 mOhmsN - Channel 1.4 V- 55 C+ 150 C19 WSmd/SmtPOWERPAK - SC - 70 - 6ReelSi 12 V14.3 nC  Trenchfet
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