MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2501UFB4-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K
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Diodes Incorporated 20370
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AUD 0.1365
Multiples of: 3000

1 A20 V700 mOhmsN - Channel 500 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX2 - DFN1006 - 3ReelSi1 Channel8 V2 nCEnhancement  
5HP01M-TL-H


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 20370
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AUD 0.1645
Multiples of: 1

70 mA50 V22 Ohmsp - channel     smd/smtSOT - 323 - 3Reelsi1 channel     
FDC6301N


Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
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ON Semiconductor 20370
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AUD 0.2182
Multiples of: 1

   Dual N Channel               
TSM2323CX RFG


MOSFET -20V -4.7A Single P- Channel Power MOSFET
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Taiwan Semiconductor 20370
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AUD 0.3704
Multiples of: 3000

4.7 A20 V31 mOhmsP - Channel 400 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V12.5 nCEnhancement  
STL7DN6LF3


MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
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STMicroelectronics 20370
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AUD 1.0423
Multiples of: 3000

20 A60 V43 mOhmsN - Channel    52 WSmd/SmtPowerflat 5X6ReelSi2 Channel  EnhancementAec - Q101Stripfet
SI1469DH-T1-BE3


P-Channel 20V 3.2A (Ta), 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
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Vishay 20337
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AUD 0.5558
Multiples of: 1

          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®Mosfet (Metal Oxide)      
HY19P03D


MOSFET P Trench 30V 90A (Tc) 3V @ 250uA 6 mΩ @ 45A,10V TO-252-2L RoHS
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HUAYI 16984
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AUD 0.2573
Multiples of: 5

                   
8205S


20V 6A 20mΩ@10V,5A 2W 1.5V@250uA 74.69pF@8V 2 N Channel(Double)Common Drain 522.3pF@8V 6.24nC@4.5V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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JSMSEMI 16402
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AUD 0.0338
Multiples of: 10

                   
NTS4173PT1G


ON Semiconductor MOSFET PFET SC70 30V TR
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ON Semiconductor 2497
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AUD 0.1452
Multiples of: 1

- 1.3 A- 30 V165 mOhmsP - Channel12 V - 55 C+ 150 C350 mWSmd/SmtSC - 70 - 3Reel    Enhancement  
BSS138PW,115


N-Channel 60 V 320mA (Ta) 260mW (Ta), 830mW (Tc) Surface Mount SOT-323
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 0.0448
Multiples of: 3000

320 mA60 V1.6 OhmsN - Channel 900 mV- 55 C+ 150 C310 mWSmdsmtSOT - 323 - 3ReelSi1 Channel10 V0.72 nCEnhancement  
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