MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
30P06


60V 30A 30mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 35264
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AUD 0.2019
Multiples of: 5

                   
MDT18N20


200V 18A 130m@10V,7.5A 100W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Minos 34177
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AUD 0.276
Multiples of: 5

                   
PSMN1R0-30YLC,115


NXP Semiconductors MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
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Nexperia 20695
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AUD 0.9036
Multiples of: 1

100 A30 V1.15 mOhmsN - Channel20 V1.41 V- 55 C+ 175 C137 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V103.5 nCEnhancement  
DMN6140LQ-7


MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 10A
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Diodes Incorporated 19749
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AUD 0.1464
Multiples of: 5

1.6 A60 V92 mOhmsN - Channel 1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V8.6 nCEnhancementAec - Q101 
IRF7341GTRPBF


Mosfet Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surface Mount 8-SO
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Infineon 19650
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AUD 1.0811
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5.1 A , 5.1 A55 v , 55 V65 mOhms , 65 mOhmsN - Channel 1 v , 1 V- 55 C+ 175 C2.4 WSmd/SmtSO - 8ReelSi2 Channel+/- 20 v , +/- 20 V29 nC , 29 nCEnhancement  
FDD8782


MOSFET 25V N-Channel PowerTrench MOSFET
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ON Semiconductor 19642
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AUD 0.7909
Multiples of: 1

35 A25 V8.5 mOhmsn - channel  - 55 C+ 175 C50 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
DMP6185SE-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 19579
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AUD 0.2949
Multiples of: 5

         Smd/SmtSOT - 223 - 3Cut TapeSi      
BSC019N02KS G


Infineon Technologies MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
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Infineon 19545
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AUD 1.6045
Multiples of: 1

30 A20 V1.95 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSON - 8ReelSi1 Channel12 V Enhancement Optimos
2N7002W-7-F-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 19448
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AUD 0.0174
Multiples of: 50

                   
FDN360P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 19109
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AUD 0.0629
Multiples of: 10

                   
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