MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN601DWKQ-7


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 20251
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AUD 0.089
Multiples of: 1

300 mA60 V3 OhmsN - Channel 1 V- 65 C+ 150 C200 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V304 pCEnhancementAec - Q101 
NTUD3169CZT5G


ON Semiconductor MOSFET 20V Mosfet Complementary
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ON Semiconductor 20241
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AUD 0.0776
Multiples of: 1

220 mA20 V1.5 Ohms , 5 OhmsN - Channel, P - Channel8 V - 55 C+ 150 C200 mWSmd/SmtSOT - 963 - 6Reel    Enhancement  
2N7000_D74Z


Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
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ON Semiconductor 20230
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AUD 0.176
Multiples of: 1

200 mA60 V1.2 OhmsN - Channel  - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Ammo PackSi1 Channel20 V Enhancement  
TSM250N02CX RFG


MOSFET 20V, 5.8A, Single N- Channel Power MOSFET
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Taiwan Semiconductor 20200
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AUD 0.1659
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5.8 A20 V20 mOhmsN - Channel 400 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V7.7 nCEnhancement  
BSC010NE2LSATMA1


Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
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Infineon 20124
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AUD 0.8887
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            Optimos      
BSC011N03LSATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
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Infineon 20119
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AUD 0.9603
Multiples of: 1

            Optimos      
FDC6327C


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 20108
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AUD 0.1046
Multiples of: 5

                   
AO4419(UMW)


SOP-8 MOSFETs ROHS
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Youtai 20083
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AUD 0.0849
Multiples of: 5

                   
IRLML5103(UMW)


SOT-23 MOSFETs ROHS
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Youtai 20056
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AUD 0.0636
Multiples of: 10

                   
DMP2165UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 20011
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AUD 0.06
Multiples of: 10

- 2.5 A20 V90 mOhmsP - Channel 1 V- 55 C+ 150 C0.7 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V3.5 nCEnhancement  
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