MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205A


20V 6A 1.5W 23mΩ@4.5V 2 N-Channel TSSOP-8 MOSFETs ROHS
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HXY MOS 18895
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AUD 0.071
Multiples of: 10

                   
FDD86326


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 18776
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AUD 1.6027
Multiples of: 1

37 A80 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C62 WSmd/SmtDPAKReelSi1 Channel20 V7.6 nC  Powertrench
BS270_D74Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 18775
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AUD 0.176
Multiples of: 1

400 mA60 V2 Ohmsn - channel  - 55 C+ 150 C625 mWthrough holeTO - 92 - 3 K in KED LEADAmmo Packsi1 channel20 V enhancement  
SSM10N961L,ELF


MOSFETs 30V N-ch Common drain FET Rss:9.9mOhm Vgs: 10V Pd:0.88W Pkg: TCSPAG
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Toshiba 18772
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AUD 0.5154
Multiples of: 1

 30 V N - Channel 2.3 V + 150 C1.51 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.3 nCEnhancement  
IRLR3410TRPBF


MOSFET N Trench 100V 17A (Tc) 2V @ 250uA 105 mΩ @ 10A,10V DPAK RoHS
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Infineon 18759
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AUD 0.3699
Multiples of: 1

15 A100 V155 mOhmsN - Channel  - 55 C+ 175 C52 WSmd/SmtDPAKReelSi1 Channel16 V22.7 nCEnhancement  
HKTG90N03


PDFN(5x6) MOSFETs ROHS
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Hottech 18691
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AUD 0.1371
Multiples of: 5

                   
JY3407AX


30V 4.3A 1.6V 1PCSPChannel SOT-23 MOSFETs ROHS
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Shenzhen JingYang 18672
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AUD 0.0619
Multiples of: 10

                   
NTD110N02RT4G


ON Semiconductor MOSFET 24V 110A N-Channel
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ON Semiconductor 18640
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AUD 1.1782
Multiples of: 1

110 A24 V4.1 mOhmsn - channel20 V - 55 C+ 175 C2.88 Wsmd/smtDPAK - 3Reelsi1 channel20 V enhancement  
AOD2610E


MOSFET N Trench 60V 46A (Tc) 2.4V @ 250uA 9.5 mΩ @ 20A,10V TO-252 RoHS
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Alpha & Omega 17527
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AUD 0.3479
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IRF9640PBF


MOSFET RECOMMENDED ALT 844-IRF9640PBF
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Vishay 12835
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AUD 1.0495
Multiples of: 1

11 A200 V500 mOhmsP - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V44 nCEnhancement  
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