MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STN2NF10


MOSFET N-Ch 100 Volt 2 Amp
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STMicroelectronics 31040
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AUD 0.276
Multiples of: 4000

2.4 A100 V260 mOhmsN - Channel 2 V- 55 C+ 150 C3.3 WSmd/SmtSOT - 223ReelSi1 Channel10 V10 nCEnhancement Stripfet
DMN3024LSD-13


Mosfet Array 2 N-Channel (Dual) 30V 6.8A 1.8W Surface Mount 8-SO
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Diodes Incorporated 21825
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AUD 0.3988
Multiples of: 2500

7.2 A30 V24 mOhms , 24 mOhmsN - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V12.9 nC , 12.9 nCEnhancement  
NTNUS3171PZT5G


MOSFET T1 20V P-CH SOT-1123
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ON Semiconductor 19400
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AUD 0.1429
Multiples of: 1

150 mA20 V3.4 OhmsP - Channel  - 55 C+ 150 C125 mWSmd/SmtSOT - 1123ReelSi1 Channel     
DMP4050SSS-13


MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A
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Diodes Incorporated 19400
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AUD 0.3962
Multiples of: 2500

4.4 A40 V50 mOhmsP - Channel 1 V- 55 C+ 150 C1.56 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V13.9 nCEnhancement  
FQP6N60C


Fairchild Semiconductor MOSFET 600V N-Channel Adv Q-FET C-Series
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ON Semiconductor 19400
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AUD 0.8989
Multiples of: 1

5.5 A600 V2 Ohmsn - channel30 V - 55 C+ 150 C125 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
SQJ403BEEP-T1_BE3


MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 19400
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AUD 1.0764
Multiples of: 1

30 A30 V8.5 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V75 nCEnhancement  
BSZ028N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 20A; 50W; PG-TSDSON-8
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Infineon 19400
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AUD 1.05
Multiples of: 5000

            Optimos 3      
SI4202DY-T1-GE3


MOSFET DUAL N-CH 20V (D-S)
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Vishay 19400
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AUD 1.2776
Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
STD13NM60N


mosfet n trench 600v 11a (tc) 5v @ 250ua 380 m @ 5.5a,10v to-252-2 (dpak) rohs
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STMicroelectronics 19400
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AUD 1.6912
Multiples of: 2500

                   
STD17NF03LT4


Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK
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STMicroelectronics 1225
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AUD 0.3651
Multiples of: 1

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