MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP2165UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 47462
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AUD 0.1362
Multiples of: 5

- 2.5 A20 V90 mOhmsP - Channel 1 V- 55 C+ 150 C0.7 WSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V3.5 nCEnhancement  
IRFR3806TRPBF


MOSFET N Trench 60V 43A 4V @ 50uA 15.8 mΩ @ 25A,10V TO-252-2 (DPAK) RoHS
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Infineon 27681
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AUD 0.5558
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43 A60 V12.6 mOhmsN - Channel20 V   71 WSmd/SmtDPAK - 3ReelSi1 Channel20 V22 nC   
PJM10H01PSA


100V 1A 650mΩ@10V,1A 500mW P Channel SOT-23 MOSFETs ROHS
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Pingjingsemi 20311
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AUD 0.0656
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IRFR220NTRPBF


MOSFET N Trench 200V 5A 4V @ 250uA 600 mΩ @ 2.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 19400
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AUD 0.258
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5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
BSC0504NSIATMA1


Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
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Infineon 18531
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AUD 0.3991
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            Optimos 5      
2N7002 H6327


MOSFET N-Channel 60V MOSFET
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Infineon 18504
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AUD 0.0519
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300 mA60 V1.6 OhmsN - Channel 1.5 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
2N7002BKV,115


MOSFET Dual N-Channel 60V 340mA
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Nexperia 18491
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AUD 0.1037
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340 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C0.525 WSmd/SmtSOT - 666 - 6ReelSi2 Channel10 V0.5 nCEnhancement  
NTNS3164NZT5G


MOSFET NFET SOT883 20V 245MA 1.5
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ON Semiconductor 18444
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AUD 0.1523
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361 mA20 V700 mOhmsN - Channel     Smd/SmtXDFN3 - 3ReelSi      
PSMN5R5-60YS,115


MOSFET N-CHANNEL 60V STD LEVEL MOSFET
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Nexperia 17998
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AUD 0.9617
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   N - Channel  - 55 C+ 175 C Smd/SmtSOT - 669Reel       
BSS123LT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 17983
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AUD 0.0212
Multiples of: 20

                   
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