MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPC100N04S51R2ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 19293
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AUD 1.4886
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100 A40 V1.2 mOhmsN - Channel 2.8 V- 55 C+ 175 C150 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V131 nCEnhancementAEC - Q101 
RSD140P06TL


MOSFET Trans MOSFET P-CH 60V 14A
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ROHM 19246
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AUD 0.993
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14 A- 60 V84 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C20 WSmd/SmtSC - 63 - 3ReelSi1 Channel20 V27 nC   
T2N7002AK-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 18759
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AUD 0.0099
Multiples of: 20

                   
BUK7Y9R9-80EX


N-Channel 80 V 89A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 18724
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AUD 0.968
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89 A80 V7.3 mOhmsN - Channel 3 V- 55 C+ 175 C195 WSMD/SMTLFPAK - 56 - 5Reel , Cut TapeSi1 Channel- 20 V , 20 V51.6 nCEnhancement  
CSD18534Q5A


Texas Instruments MOSFET 60V N-Ch NexFET Pwr MOSFET
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Texas Instruments 18655
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AUD 0.5351
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69 A60 V12.4 mOhmsN - channel20 V1.9 V- 55 C+ 150 C3.1 WSmd/smtVSON - FET - 8ReelSi1 Channel20 V17 nC  Nexfet
ECH8693R-TL-W


MOSFET N-CH Pwr MOSFET 24V 14A 7mOhm
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ON Semiconductor 18470
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AUD 0.3756
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14 A24 V7 mOhmsN - Channel12.5 V - 55 C+ 150 C1.4 WSmd/SmtECH - 8ReelSi2 Channel12.5 V13 nC   
AP2045Q


20V 65A 4.6mΩ@4.5V,20A 35W N Channel DFN-8(3x3.1) MOSFETs ROHS
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Quan Li 18187
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AUD 0.1572
Multiples of: 5

                   
SI7454FDP-T1-RE3


MOSFET 100V N-CHANNEL (D-S)
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Vishay 17644
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AUD 0.6097
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23.5 A100 V29.5 mOhmsN - Channel 2.4 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - SO - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V17.4 nCEnhancement TrenchFET
SI2312CDS-T1-GE3


MOSFET 20V Vds 8V Vgs SOT-23
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Vishay 12770
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AUD 0.2063
Multiples of: 5

6 A20 V31.8 mOhmsN - Channel 450 mV- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V18 nCEnhancement Trenchfet
FDS8840NZ


MOSFET PT4 Nch with Zener
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ON Semiconductor 1789
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AUD 1.139
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18.6 A40 V4.5 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
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