MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP1606


20V 700mA 180mΩ@2.5V,300mA 550mW N Channel DFN-3L(0.6x1) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Quan Li 18890
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AUD 0.0382
Multiples of: 50

                   
FDT86102LZ


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 18868
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AUD 0.5762
Multiples of: 1

6.6 A100 V28 mOhmsN - Channel   + 150 C2.2 WSmd/SmtSOT - 223ReelSi1 Channel 17 nC  Powertrench
FDD2572


Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; TO252AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 18857
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AUD 1.7408
Multiples of: 1

            Powertrench®      
DMN2056U-7


MOSFET MOSFET N-CHANNEL 20V 4A SOT23-3
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Diodes Incorporated 18847
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AUD 0.0651
Multiples of: 10

         Smd/SmtSOT - 23 - 3Cut TapeSi      
AO3401


30V 4.2A 50mO@10V,4.2A 1.2W P Channel SOT-23 MOSFETs ROHS
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LGE 18801
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AUD 0.0575
Multiples of: 10

                   
SSM10N961L,ELF


MOSFETs 30V N-ch Common drain FET Rss:9.9mOhm Vgs: 10V Pd:0.88W Pkg: TCSPAG
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Toshiba 18786
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AUD 0.5298
Multiples of: 1

 30 V N - Channel 2.3 V + 150 C1.51 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V17.3 nCEnhancement  
FDD86326


MOSFET 80V N-Channel PowerTrench MOSFET
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ON Semiconductor 18776
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AUD 1.6027
Multiples of: 1

37 A80 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C62 WSmd/SmtDPAKReelSi1 Channel20 V7.6 nC  Powertrench
IRF3709ZSTRRPBF


MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
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Infineon 18758
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AUD 1.1663
Multiples of: 1

87 A30 V7.8 mOhmsN - Channel    79 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V17 nC   
DMN63D8LDW-7


MOSFET 30V DUAL N-CH MOSFET
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Diodes Incorporated 18711
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AUD 0.0439
Multiples of: 10

260 mA30 V2.8 OhmsN - Channel20 V1.5 V- 55 C+ 150 C300 mWSmd/SmtSOT - 363 - 6Reel   0.87 nCEnhancement  
NX138BKHH


N-Channel 60V 380mA (Ta) 380mW (Ta), 2.8W (Tc) Surface Mount DFN0606-3
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Nexperia 18700
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AUD 0.0471
Multiples of: 1

380 mA60 V2.3 OhmsN - Channel 1.5 V- 55 C+ 150 C2.8 WSMD/SMTDFN - 0606 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V500 pCEnhancement  
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