MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SQ7414CENW-T1_GE3


MOSFET 60V Vds 20V Vgs PowerPAK 1212-8W
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Vishay 35760
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AUD 0.4391
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18 A60 V23 mOhmsN - Channel 1.5 V- 55 C+ 175 C62 WSmd/SmtPowerpak1212 - 8Cut TapeSi1 Channel20 V25 nCEnhancementAec - Q101 
IRF540NSTRLPBF


MOSFET N Trench 100V 33A 4V @ 250uA 44 mΩ @ 16A,10V TO-263-2 RoHS
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Infineon 18886
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AUD 0.854
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            Hexfet®      
IRF540STRLPBF


N-Channel 100 V 28A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D²PAK (TO-263)
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Vishay 18303
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AUD 1.4473
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   N - Channel  - 55 C+ 175 C Smd/SmtD2PAK - 2Reel       
SSM6P41FE(TE85L,F)


MOSFET LowON Res MOSFET ID=-0.72A VDSS=-20V
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Toshiba 18271
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AUD 0.1904
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720 mA20 V300 mOhmsP - Channel 1 V + 150 C150 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel8 V1.76 nCEnhancement  
AUIRF7343QTR


Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
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Infineon 18237
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AUD 2.1532
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4.7 A55 V65 mOhmsN - Channel, P - Channel20 V   2 WSmd/SmtSOIC - 8ReelSi2 Channel20 V24 nC Aec - Q101 
MDD50N06D


60V 50A 17mΩ@10V null TO-252 MOSFETs ROHS
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Microdiode Electronics 18236
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AUD 0.1761
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TSM170N06CP ROG


MOSFET 60V 38A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18170
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AUD 1.3471
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38 A60 V15 mOhmsN - Channel 1.2 V- 55 C+ 150 C46 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V15 nCEnhancement  
ESP10N10


100V 8A 85m@10V,8A 2.7W 1.85V@250uA 1PCSNChannel SOP-8 MOSFETs ROHS
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ElecSuper 18139
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AUD 0.104
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NCE2302


MOSFET N Trench 20V 4A 1.2V @ 250uA 59 mΩ @ 2.5A,2.5V SOT-23 (SOT-23-3) RoHS
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NCE Power 17954
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AUD 0.0509
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IRLML6344TRPBF-HXY


30V 5.8A 28mΩ@10V 1.4V null SOT-23 MOSFETs ROHS
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HXY MOS 15132
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AUD 0.0255
Multiples of: 20

                   
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