MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138AKS-QX


MOSFET MOSFET-LOW VOLT SOT363/SC-88
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Nexperia 20841
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AUD 0.0581
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220 mA60 V3 OhmsN - Channel 1.5 V- 55 C+ 175 C270 mWSMD/SMTTSSOP - 6Reel , Cut TapeSi2 Channel- 20 V , + 20 V210 pCEnhancement  
SSM3K37CT,L3F


MOSFET Small-Signal MOSFET
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Toshiba 19021
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AUD 0.0534
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200 mA20 V5.6 OhmsN - Channel 350 mV- 55 C+ 150 C100 mWSmd/SmtCST - 3C - 3ReelSi1 Channel+/- 10 V Enhancement  
NCV8402ASTT1G


Power Switch/Driver 1:1 N-Channel 2A SOT-223 (TO-261)
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ON Semiconductor 18992
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AUD 0.5312
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2 A55 V200 mOhmsN - Channel 1.3 V- 40 C+ 150 C1.7 WSmd/SmtSOT - 223 - 3Cut TapeSi2 Channel10 V EnhancementAec - Q101 
TSM05N03CW RPG


MOSFET 30V 5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 18970
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AUD 0.363
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           Cut Tape       
SSM3K35CT,L3F


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=0.18A RDSON=3.0O @ 4.0V in CST3 package
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Toshiba 18919
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AUD 0.055
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180 mA20 V1.1 OhmsN - Channel 1 V- 55 C+ 150 C100 mWSMD/SMT Cut Tape , ReelSi1 Channel- 10 V , + 10 V-Enhancement  
BS270_D74Z


MOSFET N-Ch Enhancement Mode Field Effect
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ON Semiconductor 18915
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AUD 0.1571
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400 mA60 V2 Ohmsn - channel  - 55 C+ 150 C625 mWthrough holeTO - 92 - 3 K in KED LEADAmmo Packsi1 channel20 V enhancement  
FDN337N


SOT-23 MOSFETs ROHS
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TECH PUBLIC 17256
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AUD 0.0584
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T2N7002BK,LM(T


Transistor: N-MOSFET; unipolar; 60V; 400mA; 320mW; SOT23
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Toshiba 16724
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AUD 0.0797
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Hot IRF4905PBF


MOSFET P Trench 55V 74A 4V @ 250uA 20 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 16485
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AUD 0.6263
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74 A55 V20 mOhmsP - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
AP4580


2 N-Channel&2 P-Channel(fullBridge) SOT-23-8L MOSFETs ROHS
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Quan Li 5810
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AUD 0.1161
Multiples of: 10

                   
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