MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP22D4UFO-7B


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 19172
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AUD 0.2231
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530 mA20 V1.9 OhmsP - Channel 1 V- 55 C+ 150 C820 mWSmd/SmtX2 - DFN0604 - 3Cut TapeSi1 Channel8 V400 pCEnhancement  
IPG20N04S4L11ATMA1


MOSFET N-CHANNEL_30/40V
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Infineon 19157
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AUD 0.7318
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   Dual N Channel      TDSON - 8Reel       
BSS315PH6327XT


MOSFET OptiMOS -P 2 Small Signal Transistor
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Infineon 19125
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AUD 0.1333
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1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.3 nCEnhancementAec - Q101 
BSS214NWH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
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Infineon 19114
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AUD 0.0722
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            Optimos 2      
PJA3407_R1_00001


MOSFET P Trench 30V 3.8A 2.1V @ 250uA 65 mΩ @ 3.8A,10V SOT-23 RoHS
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Panjit 19067
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AUD 0.1084
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SI2306A


MOSFET N Trench 30V 3.5A 3V @ 250uA 57 mΩ @ 3.5A,10V SOT-23 RoHS
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Youtai 19031
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AUD 0.0282
Multiples of: 20

                   
TSM085P03CV RGG


MOSFET -30V -64A Single P-C hannel Power MOSFET
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Taiwan Semiconductor 18705
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AUD 0.4966
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           Cut Tape       
AP6800


30V 5.8A 22mΩ@10V,5.8A 1.2W 2 N-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 18197
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AUD 0.1144
Multiples of: 10

                   
BC2301(2.8A) 2301


SOT-23-3L MOSFETs ROHS
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Hong Kong Chuangji 18071
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AUD 0.0167
Multiples of: 10

                   
IPD042P03L3GATMA1


MOSFET SMALL SIGNALP-CH
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Infineon 14550
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AUD 1.059
Multiples of: 2500

70 A30 V6.8 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 4.5 V131 nCEnhancement  
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