MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMC86262P


MOSFET PT5 150V/25V Pch PowerTrench Mosfet
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ON Semiconductor 19172
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AUD 0.7569
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- 2 A- 150 V541 mOhmsP - Channel - 4 V- 55 C+ 150 C40 WSmd/SmtMLP - 8ReelSi1 Channel+/- 25 V9.1 nCEnhancement Powertrench
BSS315PH6327XT


MOSFET OptiMOS -P 2 Small Signal Transistor
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Infineon 19125
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AUD 0.1333
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1.5 A30 V113 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.3 nCEnhancementAec - Q101 
ME50P06-G


MOSFET P Trench 60V 61A 60V @ 260uA 17 mΩ @ 17A,10V TO-252-2 (DPAK) RoHS
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MQTSUKI 19100
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AUD 0.4646
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IRFR220PBF


N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 19082
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AUD 0.4893
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4.8 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C42 WSmd/SmtDPAKTubeSi1 Channel10 V14 nCEnhancement  
SIR882BDP-T1-RE3


N-Channel 100V 16.5A (Ta), 67.5A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 19064
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AUD 1.0546
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67.5 A100 V6.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V54 nCEnhancement TrenchFET
SIR104LDP-T1-RE3


MOSFET N-CHANNEL 100 V
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Vishay 19057
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AUD 1.0843
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           Cut Tape       
SSM3K15ACT,L3F


MOSFET Small-signal MOSFET
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Toshiba 19015
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AUD 0.0576
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100 mA30 V3.6 OhmsN - Channel 800 mV + 150 C100 mWSmd/SmtCST3 - 3Cut TapeSi1 Channel4 V Enhancement  
NX7002BKWX


MOSFET 60V Single N-Channel Trench MOSFET
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Nexperia 18163
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AUD 0.0427
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   N - Channel       Cut TapeSi1 Channel     
Hot IRF5210PBF


MOSFET P Trench 100V 40A 4V @ 250uA 60 mΩ @ 24A,10V TO-220 (TO-220-3) RoHS
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Infineon 17830
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AUD 1.1229
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            Hexfet®      
IRLML9301TRPBF


MOSFET P Trench 30V 3.6A 2.4V @ 10uA 64 mΩ @ 3.6A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 4457
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AUD 0.0969
Multiples of: 5

   P Channel      SOT - 23Reel       
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