MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC077N12NS3 G


MOSFET N-Ch 120V 98A TDSON-8 OptiMOS 3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 20000
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AUD 2.0429
Multiples of: 1

98 A120 V6.6 mOhmsN - Channel 2 V- 55 C+ 150 C139 WSmd/SmtTDSON - 8ReelSi1 Channel20 V88 nCEnhancement Optimos
SI1902CDL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
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Vishay 19996
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AUD 0.6038
Multiples of: 1

1.1 A20 V235 mOhmsN - Channel 1.5 V- 55 C+ 150 C420 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V2 nCEnhancement TrenchFET
DMT69M8LFV-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 19987
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AUD 0.4308
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          Powerdi3333 - 8Cut TapeSi      
BSR302NL6327HTSA1


Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
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Infineon 19930
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AUD 0.1823
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            optimos 2      
TSM085P03CV RGG


MOSFET -30V -64A Single P-C hannel Power MOSFET
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Taiwan Semiconductor 19924
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AUD 1.6269
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           Cut Tape       
BSS138BKS


50V 300mA 1.5@10V,500mA 300mW 1.2V@250mA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 19923
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AUD 0.0285
Multiples of: 5

                   
STP65NF06


Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; TO220-3
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STMicroelectronics 19881
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AUD 0.8826
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STW48N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 19788
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AUD 4.3591
Multiples of: 600

40 A600 V0.065 Ohmsn - channel 3 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V70 nCenhancement mdmesh
2N7002KDW 72K


60V 300mA 0.9Ω@10V,500mA 0.15W 2 N-Channel SOT-363 MOSFETs ROHS
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Hong Kong Chuangji 19706
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AUD 0.0266
Multiples of: 20

                   
DMN63D8L-13


MOSFET N-Ch Enh Mode FET 30V 20Vgss 350mW
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Diodes Incorporated 19688
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AUD 0.0471
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350 mA30 V2.8 OhmsN - Channel 1.5 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V900 pCEnhancement  
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