MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9328TRPBF


MOSFET P Trench 30V 12A (Tc) 2.4V @ 25uA 11.9 mΩ @ 12A,10V SO8 RoHS
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Infineon 76242
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AUD 0.6225
Multiples of: 1

12 A30 V16.1 mOhmsP - Channel 1.8 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V18 nC   
DMP3099L-13


Diodes Incorporated MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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Diodes Incorporated 19400
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AUD 0.0977
Multiples of: 10000

- 3.8 A- 30 V65 mOhmsP - Channel20 V- 1 V- 55 C+ 150 C1.08 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V11 nCEnhancement  
NTNUS3171PZT5G


MOSFET T1 20V P-CH SOT-1123
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ON Semiconductor 19400
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AUD 0.1429
Multiples of: 1

150 mA20 V3.4 OhmsP - Channel  - 55 C+ 150 C125 mWSmd/SmtSOT - 1123ReelSi1 Channel     
NTF3055L108T1G


ON Semiconductor MOSFET 60V 3A N-Channel
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ON Semiconductor 19400
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AUD 0.4286
Multiples of: 1000

3 A60 V120 mOhmsN - Channel15 V1 V- 55 C+ 175 C2.1 WSmd/SmtSOT - 223 - 3ReelSi1 Channel5 V7.6 nCEnhancement  
IAUZN04S7L030ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 19400
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AUD 0.517
Multiples of: 1

100 A40 V3.05 mOhmsN - Channel 1.8 V- 55 C+ 175 C58 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V18 nCEnhancement OptiMOS
BSC066N06NSATMA1


Infineon Technologies MOSFET
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Infineon 19400
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AUD 0.5748
Multiples of: 5000

64 A60 V6.6 mOhmsN - Channel 2.8 V- 55 C+ 150 C46 WSmd/SmtPG - TDSON - 8Reel-1 Channel+/- 20 V17 nCEnhancement Optimos
STD5NK60ZT4


MOSFET N-Ch 600 Volt 5 Amp Zener SuperMESH
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STMicroelectronics 19400
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AUD 0.7223
Multiples of: 2500

5 A600 V1.6 OhmsN - Channel30 V - 55 C+ 150 C90 WSmd/SmtDPAK - 3ReelSi1 Channel30 V Enhancement Supermesh
IRFR9220TRPBF


P-Channel 200 V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak
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Vishay 19400
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AUD 0.7712
Multiples of: 2000

3.6 A200 V1.5 OhmsP - Channel 2 V- 55 C+ 150 C42 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel10 V20 nCEnhancement  
IRFP064NPBF


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 59A,10V TO-247 (AC) RoHS
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Infineon 19400
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AUD 0.8362
Multiples of: 1

98 A55 V8 mOhmsN - Channel    150 WThrough HoleTO - 247ACTubeSi1 Channel20 V113.3 nC   
IRLR024NTRPBF


MOSFET N Trench 55V 17A 2V @ 250uA 65 mΩ @ 10A,10V TO-252-2 (DPAK) RoHS
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Infineon 19113
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AUD 0.2129
Multiples of: 5

17 A55 V110 mOhmsN - Channel  - 55 C+ 175 C38 WSmd/SmtDPAKReelSi1 Channel16 V10 nCEnhancement  
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