MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3416


MOSFET N Trench 20V 6.5A 1V @ 250uA 22 mΩ @ 6.5A,4.5V SOT-23-3L RoHS
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Alpha & Omega 50090
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AUD 0.093
Multiples of: 5

                   
BSZ520N15NS3GATMA1


Infineon Technologies MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
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Infineon 31026
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AUD 0.9511
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21 A150 V52 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSmd/SmtTSDSON - 8ReelSi1 Channel10 V8.7 nCEnhancement Optimos
AO3401


30V 4.2A 50mO@10V,4.2A 1.2W P Channel SOT-23 MOSFETs ROHS
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LGE 27392
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AUD 0.0631
Multiples of: 10

                   
SQ4282EY-T1_BE3


MOSFET DUAL N-CHANNEL 30V
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Vishay 20296
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AUD 1.0362
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8 A30 V12.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.9 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V31.5 nCEnhancement TrenchFET
IRFR220TRPBF-BE3


MOSFETs TO252 200V 4.8A N-CH MOSFET
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Vishay 20168
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AUD 0.9617
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4.8 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V14 nCEnhancement  
IRLML6401TRPBF-ES


12V 3.8A 29m@4.5V,3.8A 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 19943
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AUD 0.0286
Multiples of: 20

                   
AO3400-SOT23


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 28 mΩ @ 5.8A,10V SOT23 RoHS
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PUOLOP 19826
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AUD 0.025
Multiples of: 20

                   
PSMN020-100YS,115


MOSFET N-CHANNEL 100V STD LEVEL MOSFET
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Nexperia 19397
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AUD 0.6503
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43 A100 V37 mOhmsN - Channel 4.6 V- 55 C+ 175 C106 WSmd/SmtSOT - 669ReelSi1 Channel20 V41 nCEnhancement  
IPT007N06NATMA1


N-Channel 60 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 19258
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AUD 5.4029
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300 A60 V0.75 mOhmsN - Channel 2.8 V- 55 C+ 175 C375 WSmd/SmtHSOF - 8ReelSi1 Channel20 V216 nCEnhancement Optimos
IRF840PBF


N-Channel 500 V 8A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 16215
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AUD 0.6847
Multiples of: 1

8 A500 V850 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
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