MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1902CDL-T1-BE3


Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
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Vishay 19996
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AUD 0.6038
Multiples of: 1

1.1 A20 V235 mOhmsN - Channel 1.5 V- 55 C+ 150 C420 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V2 nCEnhancement TrenchFET
DMT69M8LFV-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 19987
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AUD 0.4308
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          Powerdi3333 - 8Cut TapeSi      
BSR302NL6327HTSA1


Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
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Infineon 19930
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AUD 0.1823
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            optimos 2      
TSM085P03CV RGG


MOSFET -30V -64A Single P-C hannel Power MOSFET
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Taiwan Semiconductor 19924
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AUD 1.6269
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           Cut Tape       
BSS138BKS


50V 300mA 1.5@10V,500mA 300mW 1.2V@250mA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 19923
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AUD 0.0285
Multiples of: 5

                   
STW48N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 19788
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AUD 4.0096
Multiples of: 600

40 A600 V0.065 Ohmsn - channel 3 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V70 nCenhancement mdmesh
2N7002KDW 72K


60V 300mA 0.9Ω@10V,500mA 0.15W 2 N-Channel SOT-363 MOSFETs ROHS
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Hong Kong Chuangji 19706
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AUD 0.0266
Multiples of: 20

                   
Hot IRF740PBF


MOSFET RECOMMENDED ALT 844-IRF740PBF
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Vishay 19676
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AUD 0.6883
Multiples of: 1

10 A400 V550 mOhmsN - Channel 2 V- 55 C+ 150 C125 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V63 nCEnhancement  
VN10LFTA


60V 150mA 5O@10V,500mA 330mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 19590
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AUD 0.284
Multiples of: 1

150 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
STD6N95K5


MOSFET N-Ch 950V 1 Ohm 9A Zener SuperMESH 5
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STMicroelectronics 17393
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AUD 0.892
Multiples of: 1

9 A950 V1.25 OhmsN - Channel  - 55 C+ 150 C90 WSmd/SmtDPAKReelSi1 Channel30 V13 nC  Mdmesh
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