MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC252N10NSFGATMA1


Infineon Technologies MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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Infineon 19400
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AUD 3.4643
Multiples of: 5000

         Smd/SmtTDSON - 8Reel      Optimos
Hot TK6A80E,S4X


Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
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Toshiba 19353
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AUD 0.556
Multiples of: 1

6 A800 V1.35 OhmsN - Channel 4 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3ReelSi1 Channel30 V32 nCEnhancement  
AUIRF4905STRL


Trans MOSFET P-CH Si 55V 70A Automotive 3-Pin(2+Tab) D2PAK T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 19351
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AUD 5.9297
Multiples of: 1

- 70 A- 55 V20 mOhmsP - Channel20 V- 4 V- 55 C+ 150 C170 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V120 nC Aec - Q101 
IPC100N04S51R2ATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 19293
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AUD 0.5327
Multiples of: 1

100 A40 V1.2 mOhmsN - Channel 2.8 V- 55 C+ 175 C150 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V131 nCEnhancementAEC - Q101 
DMC2990UDJQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 19244
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AUD 0.1179
Multiples of: 1

           Cut Tape       
FDN335N


20V 1.7A 70mΩ@1.7A,4.5V 1W 1.5V@250uA null SOT-23 MOSFETs ROHS
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Youtai 19070
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AUD 0.026
Multiples of: 20

                   
Hot ZXMP6A18KTC


P-Channel 60 V 6.8A (Ta) 2.15W (Ta) Surface Mount TO-252-3
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Diodes Incorporated 16778
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AUD 0.7068
Multiples of: 1

10.4 A60 V55 mOhmsP - Channel 1 V- 55 C+ 150 C10.1 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V44 nCEnhancement  
PSMN4R0-60YS,115


MOSFET 60V N-Channel LFPAK Standard Level FET
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Nexperia 12070
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AUD 1.0843
Multiples of: 1

100 A60 V8.3 mOhmsN - Channel 2 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 - 4ReelSi1 Channel+/- 20 V56 nCEnhancement  
IPB072N15N3 G


MOSFET OptiMOS 3 PWR TRANST 150V 100A
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Infineon 11581
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AUD 1.188
Multiples of: 1

100 A150 V7.2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel10 V70 nCEnhancement Optimos
Si2305CDS-T1-GE3


mosfet p trench 8v 5.8a 1v @ 250ua 35 m @ 4.4a,4.5v sot-23 (sot-23-3) rohs
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Vishay 4583
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AUD 0.147
Multiples of: 5

                   
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