MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BRCS4435SC


MOSFET P Trench 30V 8.8A 3V @ 250uA 23 mΩ @ 8.8A,10V SOP-8 RoHS
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Blue Rocket 19855
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AUD 0.0953
Multiples of: 5

                   
PSMN4R0-60YS,115


MOSFET 60V N-Channel LFPAK Standard Level FET
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Nexperia 19762
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AUD 1.1243
Multiples of: 1

100 A60 V8.3 mOhmsN - Channel 2 V- 55 C+ 175 C130 WSmd/SmtSOT - 669 - 4ReelSi1 Channel+/- 20 V56 nCEnhancement  
SIR882BDP-T1-RE3


N-Channel 100V 16.5A (Ta), 67.5A (Tc) 5W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 19760
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AUD 1.0811
Multiples of: 1

67.5 A100 V6.9 mOhmsN - Channel 2.3 V- 55 C+ 150 C83.3 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V54 nCEnhancement TrenchFET
AO3407A


30V 4.1A 60mΩ@-10V,-4.1A 1.3W 3V@250uA P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 19632
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AUD 0.0276
Multiples of: 20

                   
AON7407


MOSFET P Trench 20V 14.5A 900mV @ 250uA 9.5 mΩ @ 14A,4.5V DFN 3x3 RoHS
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Alpha & Omega 19395
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AUD 0.2261
Multiples of: 5

                   
AGM18N10AP


100V 35A 45W 17m@10V,12A 1.6V@250uA 1PCSNChannel PDFN3x3 MOSFETs ROHS
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AGM-Semi 19118
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AUD 0.1749
Multiples of: 5

                   
NCEP0178AK


MOSFET N Trench 100V 78A (Tc) 2.2V @ 250uA 8.5 mΩ @ 39A,10V TO-252-2 (DPAK) RoHS
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NCE Power 18006
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AUD 0.8019
Multiples of: 1

                   
SSM3K341R,LF


MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET
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Toshiba 15384
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AUD 0.1562
Multiples of: 5

6 A60 V69 mOhmsN - Channel 1.5 V- 55 C+ 175 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V9.3 nCEnhancement  
TDM3478


MOSFET N Trench 30V 54A 2.5V @ 250uA 6 mΩ @ 12A,10V DFN 3x3 RoHS
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Techcode 6799
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AUD 0.1586
Multiples of: 5

                   
STW48N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 47
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AUD 3.9377
Multiples of: 1

40 A600 V0.065 Ohmsn - channel 3 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V70 nCenhancement mdmesh
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