MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138BKSH


MOSFET BSS138BKS SC-88
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia 23055
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AUD 0.0864
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 480 mV- 55 C+ 150 C310 mWSmd/SmtTSSOP - 6 Si1 Channel20 V0.7 nCEnhancement  
PJA3471_R1_00501


Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
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Panjit 19812
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AUD 0.186
Multiples of: 1

                   
NTJS4405NT1G


ON Semiconductor MOSFET 25V 1.2A N-Channel
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ON Semiconductor 19796
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AUD 0.0786
Multiples of: 1

1.2 A25 V299 mOhmsN - Channel  - 55 C+ 150 C630 mWSmd/SmtSC - 88 - 6ReelSi1 Channel8 V Enhancement  
STW48N60DM2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 19788
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AUD 3.5
Multiples of: 600

40 A600 V0.065 Ohmsn - channel 3 V- 55 C+ 150 C300 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V70 nCenhancement mdmesh
AO4480


N-Channel 40 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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Alpha & Omega 19787
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AUD 0.3794
Multiples of: 1

14 A  N    3.1 WSurface Mount      Enhancement  
ISC079N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 19749
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AUD 2.1179
Multiples of: 1

95 A150 V7.9 mOhmsN - Channel 3.5 V- 55 C+ 175 C165 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V31 nCEnhancement  
HSS3400A


MOSFET N Channel 30V 5.5A 1.4V @ 250uA 26mO @ 5.9A,10V SOT-23-3 RoHS
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HUASHUO 19283
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AUD 0.0233
Multiples of: 20

                   
HYG210P06LQ1D


60V 40A 19mΩ@10V,20A 60W 1.7V@250uA 60pF@25V P Channel 3.679nF@25V 90nC@10V -55℃~+175℃@(Tj) TO-252 MOSFETs ROHS
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HuaYi 17008
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AUD 0.2856
Multiples of: 5

                   
NTS4001NT1G


MOSFET 30V 270mA N-Channel
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ON Semiconductor 16490
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AUD 0.0592
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtSC - 70Reel       
BSZ025N04LSATMA1


Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
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Infineon 0
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AUD 1.2348
Multiples of: 1

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