MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1469DH-T1-BE3


P-Channel 20V 3.2A (Ta), 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6
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Vishay 20337
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AUD 0.5558
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          6 - TSSOP , SC - 88 , SOT - 363Digi - Reel®Mosfet (Metal Oxide)      
NTR5103NT1G


MOSFET NFET SOT23 60V 310MA 2.5
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ON Semiconductor 20321
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AUD 0.0505
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310 mA60 V2.5 OhmsN - Channel 1.9 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V810 pCEnhancement  
SQ4282EY-T1_BE3


MOSFET DUAL N-CHANNEL 30V
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Vishay 20296
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AUD 1.0362
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8 A30 V12.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.9 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V31.5 nCEnhancement TrenchFET
IRFR220TRPBF-BE3


MOSFETs TO252 200V 4.8A N-CH MOSFET
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Vishay 20168
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AUD 0.9617
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4.8 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C42 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V14 nCEnhancement  
DMP2047UCB4-7


Diodes Incorporated MOSFET P-Ch ENH Mode FET -20V -6
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Diodes Incorporated 20127
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AUD 0.396
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- 4.1 A- 20 V40 mOhmsP - Channel - 800 mV- 55 C+ 150 C1.66 WSmd/SmtU - WLB1010 - 4Reel- - 6 V2.3 nCEnhancement  
DMP3056LSS-13


MOSFET PMOS SINGLE P-CHANNL 30V 7.1A
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Diodes Incorporated 20122
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AUD 0.152
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7.1 A30 V45 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOP - 8ReelSi1 Channel20 V Enhancement  
AO3401


SOT-23 MOSFETs ROHS
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Shenzhen JingYang 20088
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AUD 0.0513
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IPP100N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 70A; 100W; PG-TO220-3
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Infineon 20079
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AUD 1.4946
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   N Channel               
PSMN5R8-40YS,115


NXP Semiconductors MOSFET N-CHAN 40V 64A
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Nexperia 19462
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AUD 0.682
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90 A40 V5.7 mOhmsN - Channel20 V2 V- 55 C+ 175 C89 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V28.8 nCEnhancement  
STP95N4F3


STMicroelectronics MOSFET N Ch 40V 5.4mOhm 80A
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STMicroelectronics 623
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AUD 1.2241
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80 A40 V6.2 mOhmsN - Channel  - 55 C+ 175 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V EnhancementAec - Q101Stripfet
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