MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.4W; TO92
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ON Semiconductor 40478
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AUD 0.1415
Multiples of: 1

                   
SPP07N60C3XKSA1


Infineon Technologies MOSFET N-Ch 650V 7.3A TO220-3
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Infineon 21187
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AUD 1.2502
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7.3 A650 V600 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Coolmos
SI8823EDB-T2-E1


MOSFET 20V Vds 8V Vgs MICRO FOOT 1.5 x 1
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Vishay 21163
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AUD 0.1854
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2.7 A20 V77 mOhmsP - Channel 800 mV- 55 C+ 150 C900 mWSmd/SmtMICRO - FOOT - 4Cut TapeSi1 Channel8 V17 nCEnhancement Trenchfet
IXTY08N50D2


MOSFET N-CH MOSFETS 500V 800MA
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IXYS 21041
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AUD 2.3571
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800 mA500 V4.6 Ohmsn - channel  - 55 C+ 150 C60 Wsmd/smtTO - 252 - 3Tubesi1 channel20 V12.7 nC   
SI2367DS-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 21022
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AUD 1.4393
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3.8 A20 V66 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V9 nCEnhancement  
TSM2328CX RFG


MOSFET 100V 1.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 20902
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AUD 0.7846
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           Cut Tape       
BSC009NE2LS5IATMA1


Infineon Technologies MOSFET LV POWER MOS
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Infineon 20811
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AUD 1.4543
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100 A25 V1.25 mOhmsN - Channel 1.2 V- 55 C+ 150 C74 WSmd/SmtSUPERSO - 8ReelSi1 Channel+/- 16 V20 nCEnhancement Optimos
SED3080M


MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mΩ @ 25A,10V DFN 3x3 RoHS
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SINO-IC 17479
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AUD 0.1449
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IRFR220NTRPBF


MOSFET N Trench 200V 5A 4V @ 250uA 600 mΩ @ 2.9A,10V TO-252-2 (DPAK) RoHS
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Infineon 363
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AUD 0.2524
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5 A200 V600 mOhmsN - Channel  - 55 C+ 175 C43 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
DMP3007SCG-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 0
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AUD 0.6632
Multiples of: 1

         Smd/SmtV - DFN3333 - B - 8Cut TapeSi      
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