MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002K


MOSFET 60V, 115mA N-Chan
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ON Semiconductor 20370
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AUD 0.0521
Multiples of: 3000

300 mA60 V2 OhmsN - Channel  - 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V Enhancement  
PMGD280UN,115


Mosfet Array 2 N-Channel (Dual) 20V 870mA 400mW Surface Mount 6-TSSOP
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Nexperia 20370
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AUD 0.1339
Multiples of: 3000

870 mA20 V340 mOhmsN - Channel 450 mV- 55 C+ 150 C0.4 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.89 nCEnhancement  
5HP01M-TL-H


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 20370
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AUD 0.1645
Multiples of: 1

70 mA50 V22 Ohmsp - channel     smd/smtSOT - 323 - 3Reelsi1 channel     
SI3493DDV-T1-GE3


MOSFET -20V Vds 8V Vgs TSOP-6
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Vishay 20370
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AUD 0.2457
Multiples of: 3000

8 A20 V20 mOhmsP - Channel 1 V- 55 C+ 150 C3.6 WSmd/SmtTSOP - 6Cut TapeSi1 Channel8 V52.2 nCEnhancement  
SSM3K335R,LF(T


MOSFET N Trench 30V 6A 2.5V @ 100uA 38 mΩ @ 4A,10V SOT-23F RoHS
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Toshiba 20370
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AUD 0.3
Multiples of: 1

                   
TSM2323CX RFG


MOSFET -20V -4.7A Single P- Channel Power MOSFET
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Taiwan Semiconductor 20370
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AUD 0.3398
Multiples of: 3000

4.7 A20 V31 mOhmsP - Channel 400 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V12.5 nCEnhancement  
STL7DN6LF3


MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
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STMicroelectronics 20370
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AUD 1.0125
Multiples of: 3000

20 A60 V43 mOhmsN - Channel    52 WSmd/SmtPowerflat 5X6ReelSi2 Channel  EnhancementAec - Q101Stripfet
SI7942DP-T1-E3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 20370
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AUD 9.375
Multiples of: 3000

5.9 A100 V49 mOhmsN - Channel 4 V- 55 C+ 150 C3.5 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V16 nCEnhancement TrenchFET
BSP88H6327XTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
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Infineon 2090
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AUD 0.308
Multiples of: 1

            Sipmos      
ZXMP10A13FQTA


Diodes Incorporated MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW
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Diodes Incorporated 0
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AUD 0.4351
Multiples of: 1

         Smd/smtSOT - 23 - 3ReelSi      
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