MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4407A


30V 12A 9.5mΩ 2.5V P Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 21082
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AUD 0.086
Multiples of: 5

                   
SI4900DY-T1-E3


Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
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Vishay 21080
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AUD 0.7857
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
PSMN5R8-40YS,115


NXP Semiconductors MOSFET N-CHAN 40V 64A
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Nexperia 21079
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AUD 0.6896
Multiples of: 1

90 A40 V5.7 mOhmsN - Channel20 V2 V- 55 C+ 175 C89 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V28.8 nCEnhancement  
BSS138L


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 21049
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AUD 0.0123
Multiples of: 10

                   
SI2367DS-T1-BE3


MOSFET P-CHANNEL 20-V (D-S)
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Vishay 21022
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AUD 1.4393
Multiples of: 1

3.8 A20 V66 mOhmsP - Channel 1 V- 55 C+ 150 C1.7 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V9 nCEnhancement  
IRFS7540TRLPBF


Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK
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Infineon 20952
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AUD 1.25
Multiples of: 800

110 A60 V4.2 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C160 WSmd/SmtD2PAK - 2ReelSi1 Channel20 V88 nC  Strongirfet
FDB13AN06A0


Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
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ON Semiconductor 20952
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AUD 1.6045
Multiples of: 800

            Powertrench®      
TSM2328CX RFG


MOSFET 100V 1.5A Single N-Channel Power MOSFET
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Taiwan Semiconductor 20902
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AUD 0.7846
Multiples of: 1

           Cut Tape       
BSC190N12NS3 G


MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
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Infineon 20901
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AUD 0.9044
Multiples of: 1

44 A120 V19 mOhmsN - Channel 3 V- 55 C+ 150 C69 WSmd/SmtTDSON - 8ReelSi1 Channel20 V26 nC  Optimos
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
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Diotec 20865
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AUD 0.0739
Multiples of: 1

200 mA60 V5 OhmsN - Channel 800 mV + 150 C350 mWThrough HoleTO - 92 - 2Ammo PackSi1 Channel- 20 V , + 20 V Enhancement 2N7000
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