MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7002DW


MOSFET N-Chan Enhancement Mode Field Effect
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 75660
Ships to you
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AUD 0.1056
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C200 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V Enhancement  
FDS6630A


Transistor: N-MOSFET; unipolar; 30V; 6.5A; 2.5W; SO8
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ON Semiconductor 21345
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AUD 0.4138
Multiples of: 1

            powertrench®      
IRLSL4030PBF


MOSFET MOSFT 100V 180A 4.3mOhm 87nC
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Infineon 21340
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AUD 3.3259
Multiples of: 1

180 A100 V4.5 mOhmsN - Channel    370 WThrough HoleTO - 262TubeSi 16 V87 nC   
2N7002BKW,115


MOSFET Single N-Channel 60V 300mA
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Nexperia 21315
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AUD 0.0435
Multiples of: 1

310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 323ReelSi1 Channel10 V0.5 nCEnhancement  
IPG20N04S4-12


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 21263
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AUD 0.8342
Multiples of: 1

20 A40 V12.2 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
IRF540NLPBF


Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO262
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Infineon 21064
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AUD 1.2562
Multiples of: 1

33 A100 V44 mOhmsN - Channel    140 WThrough HoleTO - 262TubeSi1 Channel20 V47.3 nC   
DMG6968U-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 20559
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AUD 0.0951
Multiples of: 5

6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8.5 nCEnhancement  
BMS2302


SOT-323 MOSFETs ROHS
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Bourne 19477
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AUD 0.0242
Multiples of: 20

                   
AO4805


30V 8.3A 21mΩ@10V,7.3A 2.5W 2 P-Channel SOP-8 MOSFETs ROHS
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JSMSEMI 17401
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AUD 0.1365
Multiples of: 5

                   
ZXMHC3A01N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 30V 2.17A, 1.64A 870mW Surface Mount 8-SO
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Diodes Incorporated 0
6 to 16 Weeks Calender.png

AUD 0.395
Multiples of: 2500

2.72 A , 2.06 A30 V180 mOhms , 330 mOhmsN_And_P - channel  - 55 C+ 150 C10.9 mWSmd/smtSOIC - 8ReelSi4 Channel20 V Enhancement  
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