MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
50N04


40V 45A 11mΩ 2V N Channel TO-252 MOSFETs ROHS
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HL 21267
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AUD 0.0876
Multiples of: 5

                   
WSP4882


MOSFET 2 N Channel (Dual) 30V 8A (Tc) 2.5V @ 250uA 26 mΩ @ 8A,10V SOP-8 RoHS
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Winsok 21266
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AUD 0.1844
Multiples of: 5

                   
IPG20N04S4-12


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 21263
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AUD 0.8342
Multiples of: 1

20 A40 V12.2 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
RUM002N05T2L


MOSFET TRANS MOSFET NCH 50V 0.2A 3PIN
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ROHM 21262
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AUD 0.0856
Multiples of: 1

   N - Channel     Smd/SmtVMT - 3Reel       
DN2625K4-G


Transistor: N-MOSFET; unipolar; 250V; 1.1A; 2.5W; TO252
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Microchip 21246
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AUD 1.7538
Multiples of: 1

                   
DMN6140L-7


Diodes Incorporated MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
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Diodes Incorporated 21107
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AUD 0.0641
Multiples of: 10

2.3 A60 V140 mOhmsN - Channel20 V3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V8.6 nCEnhancement  
4407A


30V 12A 9.5mΩ 2.5V P Channel SOP-8 MOSFETs ROHS
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HL 21082
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AUD 0.086
Multiples of: 5

                   
SI4900DY-T1-E3


Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
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Vishay 21080
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AUD 0.7857
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReelSi     Trenchfet
IPD135N03LG


Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
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Infineon 21044
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AUD 0.3038
Multiples of: 1

30 A30 V13.5 mOhmsN - Channel20 V - 55 C+ 175 C31 WSmd/SmtDPAK - 3Reel    Enhancement Optimos
IRFZ44NSTRLPBF


MOSFET N Trench 55V 49A 4V @ 250uA 17.5 mΩ @ 25A,10V D2-PAK RoHS
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Infineon 21032
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AUD 0.9498
Multiples of: 1

49 A55 V175 mOhmsN - Channel    110 WSmd/SmtD2PAKReelSi1 Channel20 V42 nC   
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