MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI8410DB-T2-E1


Vishay Semiconductors MOSFET 20V N-Chnl TrenchFET 1.5-4.5V Microfoot
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Vishay 20751
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AUD 0.8077
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5.7 A20 V37 mOhmsN - Channel 850 mV- 55 C+ 150 C1.8 WSMD/SMT Reel , Cut TapeSi1 Channel- 8 V , 8 V10.4 nCEnhancement TrenchFET
RD3G01BATTL1


MOSFET PCH -40V -15A PWR MOSFET
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ROHM 20635
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AUD 0.7543
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15 A40 V39 mOhmsP - Channel 1 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 10 V , 10 V19.3 nCEnhancement  
AO4480


N-Channel 40 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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Alpha & Omega 20227
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AUD 0.438
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14 A  N    3.1 WSurface Mount      Enhancement  
PSMN5R8-40YS,115


NXP Semiconductors MOSFET N-CHAN 40V 64A
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Nexperia 20126
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AUD 0.6789
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90 A40 V5.7 mOhmsN - Channel20 V2 V- 55 C+ 175 C89 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V28.8 nCEnhancement  
FDS86141


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 19732
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AUD 1.7757
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7 A100 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel20 V6.7 nC  Powertrench
8205


20V 6A 19mΩ 1.2V N Channel SOT-23-6 MOSFETs ROHS
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HL 16819
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AUD 0.0214
Multiples of: 20

                   
IRLML2502TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14404
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AUD 0.0679
Multiples of: 10

                   
IRFP460PBF


N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay 8254
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AUD 1.8542
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20 A500 V270 mOhmsN - Channel 2 V- 55 C+ 150 C280 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V210 nCEnhancement  
SI7848BDP-T1-E3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 2910
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AUD 1.7371
Multiples of: 3000

         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
SI2319CDS-T1-GE3


MOSFET -40V Vds 20V Vgs SOT-23
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Vishay 1872
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AUD 0.5044
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4.4 A40 V77 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V21 nCEnhancement Trenchfet
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