MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STP4925A


SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Youtai 20370
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AUD 0.1464
Multiples of: 5

                   
FDN338P


Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
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ON Semiconductor 20370
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AUD 0.2081
Multiples of: 3000

            Powertrench®      
5HP01M-TL-H


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor 20370
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AUD 0.1827
Multiples of: 1

70 mA50 V22 Ohmsp - channel     smd/smtSOT - 323 - 3Reelsi1 channel     
BSP171PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
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Infineon 20370
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AUD 0.3724
Multiples of: 1000

            Sipmos      
TSM2323CX RFG


MOSFET -20V -4.7A Single P- Channel Power MOSFET
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Taiwan Semiconductor 20370
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AUD 0.4877
Multiples of: 3000

4.7 A20 V31 mOhmsP - Channel 400 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V12.5 nCEnhancement  
IPU80R1K4P7AKMA1


Transistor: N-MOSFET; unipolar; 800V; 2.7A; 32W; IPAK
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Infineon 20370
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AUD 0.6942
Multiples of: 1

            Coolmos P7      
STL42P4LLF6


STMicroelectronics MOSFET
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STMicroelectronics 20370
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AUD 1.0111
Multiples of: 3000

42 A40 V10.5 mOhmsP - Channel 2.5 V + 175 C75 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V22 nCEnhancement Stripfet
STL7DN6LF3


MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
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STMicroelectronics 20370
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AUD 1.4375
Multiples of: 3000

20 A60 V43 mOhmsN - Channel    52 WSmd/SmtPowerflat 5X6ReelSi2 Channel  EnhancementAec - Q101Stripfet
ZXMHC6A07T8TA


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 60V 1.6A, 1.3A 1.3W Surface Mount SM8
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Diodes Incorporated 20370
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AUD 1.6042
Multiples of: 1000

1.8 A , 1.5 A60 V300 mOhms , 425 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C1.3 WSmd/SmtSM - 8Cut TapeSi4 Channel10 V3.2 nC , 5.1 nCEnhancement  
BSR92PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
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Infineon 17460
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AUD 0.2002
Multiples of: 3000

            Sipmos      
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