MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AO3401A


MOSFET P Trench 30V 4.2A 2V @ 250uA 50 mΩ @ 4.1A,10V SOT-23 RoHS
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Bourne 70014
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AUD 0.0505
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Hot IPB042N10N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 21027
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AUD 0.6544
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100 A100 V4.2 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263ReelSi1 Channel10 V88 nCEnhancement Optimos
AO3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 50 mΩ @ 4.2A,10V SOT23 RoHS
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KEXIN 20796
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AUD 0.028
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SI8410DB-T2-E1


Vishay Semiconductors MOSFET 20V N-Chnl TrenchFET 1.5-4.5V Microfoot
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Vishay 20751
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AUD 0.8077
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5.7 A20 V37 mOhmsN - Channel 850 mV- 55 C+ 150 C1.8 WSMD/SMT Reel , Cut TapeSi1 Channel- 8 V , 8 V10.4 nCEnhancement TrenchFET
TPNTK3139PT1G


20V 850mA 530mO@4.5V,550mA 690mW P Channel SOT-723 MOSFETs ROHS
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TECH PUBLIC 20641
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AUD 0.0347
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IRF5801TRPBF


MOSFET N Trench 200V 600mA 5.5V @ 250uA 2.2 Ω @ 360mA,10V TSOP-6 RoHS
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Infineon 20599
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AUD 0.2011
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600 mA200 V2.2 OhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtTSOP - 6ReelSi1 Channel30 V3.9 nCEnhancement  
IRF4905STRL(UMW)


TO-252 MOSFETs ROHS
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Youtai 20592
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AUD 0.459
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AO3407A


30V 4.1A 60mΩ@-10V,-4.1A 1.3W 3V@250uA P Channel SOT-23 MOSFETs ROHS
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FUXINSEMI 20564
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AUD 0.0264
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BSC070N10NS5ATMA1


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8
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Infineon 20557
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AUD 0.9146
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80 A100 V10.2 mOhmsN - Channel 2.2 V- 55 C+ 150 C83 WSmd/SmtSO - 8ReelSi1 Channel+/- 20 V30 nCEnhancement Optimos
PSMN030-60YS,115


NXP Semiconductors MOSFET Single N-Channel 60V 116A 56W 49.6mOhms
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Nexperia 3844
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AUD 0.2141
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21 A54 V49.6 mOhmsN - Channel 3 V- 55 C+ 175 C56 WSmd/SmtLFPAK - 4ReelSi1 Channel10 V13 nCEnhancement  
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