MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN337N


MOSFET SSOT-3 N-CH 30V
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ON Semiconductor 6471840
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AUD 0.1193
Multiples of: 3000

2.2 A30 V65 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtSSOT - 3Cut TapeSi1 Channel8 V Enhancement  
2SK3018T106


N-Channel 30 V 100mA (Ta) 200mW (Ta) Surface Mount UMT3
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ROHM 34163
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AUD 0.0469
Multiples of: 10

100 mA30 V8 OhmsN - Channel 800 mV- 55 C150 C200 mW (1/5 w)SmdsmtSOT - 23 - 3ReelSi1 Channel4 V Enhancement  
SUD50P06-15L-E3


MOSFET P-CH 60V 50A
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Vishay 22665
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AUD 1.8765
Multiples of: 1

           -Si     Trenchfet
NVMFS6H864NLT1G


MOSFET MOSFET - Power Single N-Channel 80 V 29 m O 22 A - NVMFS6H864NL DFN5 Pb-Free
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ON Semiconductor 21835
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AUD 0.6521
Multiples of: 1

22 A80 V29 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSMD/SMTSO - 8FL - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V9 nCEnhancementAEC - Q101 
IPD079N06L3GBTMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO252-3
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Infineon 21825
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AUD 0.7305
Multiples of: 1

            optimos 3      
STD2N80K5


Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
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STMicroelectronics 21825
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AUD 0.9327
Multiples of: 2500

            Supermesh      
PSMN012-60YS,115


MOSFET N-CHANNEL 60V STD LEVEL MOSFET
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Nexperia 21754
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AUD 0.5531
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59 A60 V17.8 mOhmsN - Channel 4.6 V- 55 C+ 175 C89 WSmd/SmtSOT - 669ReelSi1 Channel20 V28.4 nCEnhancement  
IRF1407PBF


Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
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Infineon 21676
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AUD 0.8404
Multiples of: 1

            Hexfet®      
SI2305CDS


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 21092
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AUD 0.1084
Multiples of: 5

                   
STD18NF25


STMicroelectronics MOSFET N-channel 250 V 17A STripFET II
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STMicroelectronics 19400
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AUD 1.5162
Multiples of: 2500

17 A250 V165 mOhmsN - Channel 3 V- 55 C+ 175 C110 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V29.5 nCEnhancementAEC - Q100STripFET
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