MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH6200TRPBF


Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
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Infineon 21359
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AUD 1.1349
Multiples of: 1

100 A20 V990 OhmsN - Channel    250 WSmd/SmtPQFN - 8ReelSi1 Channel12 V155 nC   
TSM2537CQ RFG


MOSFET MOSFET Complementary N-Ch, 20V, 11.6A
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Taiwan Semiconductor 21358
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AUD 0.3143
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11.6 A , 9 A20 V17 mOhms , 48 mOhmsN - Channel, P - Channel 500 mV , 450 mV- 55 C+ 150 C6.25 w , 6.25 WSmd/SmtTDFN22 - 6Cut TapeSi2 Channel4.5 v , - 4.5 V9.1 nC , 9.8 nCEnhancement  
MDD50N03D


30V 50A 9mΩ@10V null TO-252 MOSFETs ROHS
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Microdiode Electronics 21344
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AUD 0.0768
Multiples of: 20

                   
BSS84AKM,315


P-Channel 50 V 230mA (Ta) 340mW (Ta), 2.7W (Tc) Surface Mount SOT-883
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Nexperia 21340
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AUD 0.0694
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- 230 mA- 50 V7.5 OhmsP - Channel    340 mWSmd/SmtDFN - 1006B - 3ReelSi1 Channel 0.35 nC   
TPH1R005PL,L1Q


N-Channel 45 V 150A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba 21340
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AUD 1.4756
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150 A45 V1.7 mOhmsn - channel 1.4 V- 55 C+ 175 C170 Wsmd/smtSOP - 8Reelsi1 channel+/- 20 V99 nCenhancement  
FQP13N50C


Fairchild Semiconductor MOSFET 500V N-Ch Q-FET advance C-Series
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ON Semiconductor 21340
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AUD 1.7222
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13 A500 V480 mOhmsn - channel  - 55 C+ 150 C195 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
Hot IRFR1018ETRPBF


Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; DPAK
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Infineon 21330
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AUD 0.7822
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   N - Channel     Smd/SmtDPAKReel       
WSP4099


MOSFET 2 P Channel (Dual) 40V 6.5A (Tc) 2.5V @ 250uA 38 mΩ @ 6.5A,10V SOP-8_150mil RoHS
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Winsok 21289
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AUD 0.3514
Multiples of: 1

                   
JMTQ55P02A


20V 55A 6.6mΩ@4.5V,15A 38W 650mV@250uA P Channel PDFN-8(3.3x3.3) MOSFETs ROHS
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JieJie 21288
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AUD 0.1273
Multiples of: 5

                   
SI2316BDS-T1-E3


MOSFET 30V 4.5A 1.66W
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Vishay 21275
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AUD 0.3387
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   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236 - 3ReelSi     Trenchfet
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