MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3443CDV-T1-E3


MOSFET 20V 4.7A 3.2W 60mohm @ 4.5V
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Vishay 22729
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AUD 0.286
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
FDU7N60NZTU


Fairchild Semiconductor MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
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ON Semiconductor 22727
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AUD 0.7061
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5.5 A600 V1.05 Ohmsn - channel  - 55 C+ 150 C90 Wthrough holeIPAK - 3Tubesi1 channel    unifet
SSM3K122TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.123Ohm @ 4V in UFM package
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Toshiba 22696
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AUD 0.1467
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2 A20 V123 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
BSS316N H6327


Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3
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Infineon 22638
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AUD 0.0629
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1.4 A30 V119 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V600 pCEnhancementAec - Q101 
NVMFWS2D5N08XT1G


MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
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ON Semiconductor 22564
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AUD 1.7286
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156 A80 V2.55 mOhmsN - Channel 3.6 V- 55 C+ 175 C133 WSMD/SMTDFNW5Reel , Cut TapeSi1 Channel- 20 V , + 20 V45 nCEnhancement  
FDMS7694


MOSFET 30V NCh PowerTrench MOSFET
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ON Semiconductor 22556
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AUD 0.386
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13.2 A30 V11.1 mOhmsN - Channel 1 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
IRFP4710PBF


MOSFET N Trench 100V 72A 5.5V @ 250uA 14 mΩ @ 45A,10V TO-247 (AC) RoHS
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Infineon 21703
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AUD 2.8952
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            Hexfet®      
IRL540NPBF


MOSFET N Trench 100V 36A 2V @ 250uA 44 mΩ @ 18A,10V TO-220 (TO-220-3) RoHS
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Infineon 20878
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AUD 0.8036
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36 A100 V44 mOhmsN - Channel 2 V- 55 C+ 175 C140 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V49.3 nC   
SPD02N80C3ATMA1


Infineon Technologies MOSFET
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Infineon 20274
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AUD 0.6891
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2 A800 V2.7 OhmsN - Channel 2.1 V- 55 C+ 150 C42 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V12 nCEnhancement Coolmos
BSZ130N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
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Infineon 4850
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AUD 0.3299
Multiples of: 5000

            Optimos 3      
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