MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP32D5SFB-7B


MOSFET MOSFET BVDSS: 25V-30
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Diodes Incorporated 22996
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AUD 0.1493
Multiples of: 1

- 300 mA- 30 V4 OhmsP - Channel - 2.3 V- 55 C+ 150 C1.2 WSmd/SmtX1 - DFN1006 - 3ReelSi1 Channel+/- 25 V4 nCEnhancement  
TK5A90E,S4X(S)


TO-220SIS-3 MOSFETs ROHS
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Toshiba 21432
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AUD 0.6339
Multiples of: 1

                   
IRLSL4030PBF


MOSFET MOSFT 100V 180A 4.3mOhm 87nC
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Infineon 21340
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AUD 3.3259
Multiples of: 1

180 A100 V4.5 mOhmsN - Channel    370 WThrough HoleTO - 262TubeSi 16 V87 nC   
DMP21D0UFB4-7B


MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A
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Diodes Incorporated 21315
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AUD 0.0683
Multiples of: 5

   P - Channel  - 55 C+ 150 C Smd/SmtX2 - DFN1006 - 3Reel       
2N7002BKW,115


MOSFET Single N-Channel 60V 300mA
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Nexperia 21315
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AUD 0.0442
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310 mA60 V1.6 OhmsN - Channel 1.1 V- 55 C+ 150 C330 mW (1/3 w)Smd/SmtSOT - 323ReelSi1 Channel10 V0.5 nCEnhancement  
KSI2305CDS-T1-GE3


20V 4A 65Ω@4.5V,3.2A 1.1W P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 21291
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AUD 0.0401
Multiples of: 10

                   
NX7002BKR


NXP Semiconductors MOSFET 60V N-channel Trench MOSFET
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Nexperia 21268
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AUD 0.0267
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           Reel       
IPG20N04S4-12


Infineon Technologies MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2
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Infineon 21263
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AUD 0.8342
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20 A40 V12.2 mOhmsN - Channel   + 175 C41 WSmd/SmtTDSON - 8ReelSi2 Channel20 V  Aec - Q101Optimos
SPP07N60C3XKSA1


Infineon Technologies MOSFET N-Ch 650V 7.3A TO220-3
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Infineon 21184
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AUD 0.7954
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7.3 A650 V600 mOhmsN - Channel     Through HoleTO - 220 - 3TubeSi1 Channel    Coolmos
PJA3460_R1_00001


MOSFET /A60/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMN/NF60T-QI04/PJ///
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Panjit 2163
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AUD 0.1128
Multiples of: 5

2.5 A60 V90 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V9.3 nCEnhancement  
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