MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD18N20V2TM


Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
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ON Semiconductor 22195
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AUD 0.9473
Multiples of: 1

            Qfet®      
IRFB4410ZPBF


MOSFET N Trench 100V 97A 4V @ 150uA 9 mΩ @ 58A,10V TO-220 (TO-220-3) RoHS
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Infineon 22176
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AUD 0.6212
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97 A100 V7.2 mOhmsN - Channel    230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V83 nC   
UMW1N60G


MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Ω @ 500mA,10V SOT-223 RoHS
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Youtai 22159
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AUD 0.0792
Multiples of: 5

                   
DMN2005DLP4K-7


MOSFET N-Channel
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Diodes Incorporated 22148
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AUD 0.1875
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200 mA20 V1.5 OhmsN - Channel  - 65 C+ 150 C350 mWSmd/SmtDFN - 6ReelSi2 Channel10 V Enhancement  
TMN6080NF


PDFN5x6-8L MOSFETs ROHS
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Tritech-MOS 22145
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AUD 0.2424
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3401A


30V 4.5A 42mΩ 1.3V P Channel SOT23 MOSFETs ROHS
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HL 22135
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AUD 0.0247
Multiples of: 20

                   
AO3415


20V 4A 1.2W 50mΩ@4.5V,4.0A 800mV@250uA 160pF@10V P Channel 1450pF@10V 17.2nC@4.5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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GOODWORK 22135
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AUD 0.048
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SSM3K37MFV,L3F


MOSFET Small-signal FET 0.25A 20V 12pF
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Toshiba 22065
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AUD 0.0526
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250 mA20 V2.2 OhmsN - Channel 350 mV + 150 C150 mWSmd/SmtSOT - 723 - 3Cut TapeSi1 Channel4.5 V Enhancement  
PMV75UP,215


P-Channel 20 V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB
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Nexperia 22058
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AUD 0.0903
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- 3.2 A- 20 V77 mOhmsP - Channel - 900 mV- 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V5 nCEnhancement  
BSC080N03MS G


Infineon Technologies MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
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Infineon 22028
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AUD 0.4929
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13 A30 V8 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
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