MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SISS61DN-T1-GE3


MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 22633
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AUD 0.6726
Multiples of: 1

- 111.9 A- 20 V2.9 mOhmsP - Channel - 0.9 V- 55 C+ 150 C Smd/SmtSISS61DN - T1 - GE3Cut TapeSi1 Channel8 V154 nCEnhancement  
20N06


60V 20A 25mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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HL 22518
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AUD 0.092
Multiples of: 5

                   
IRFS3207TRLPBF


Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
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Infineon 22504
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AUD 2.3765
Multiples of: 800

180 A75 V3.6 mOhmsN - Channel    330 WSmd/SmtD2PAKReelSi1 Channel20 V180 nC   
ZXMHC10A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
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Diodes Incorporated 22439
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AUD 0.7536
Multiples of: 1

1 a , 850 mA100 V700 mOhms , 1.45 OhmsN - Channel, P - Channel 2 V- 55 C+ 150 C870 mWSmd/SmtSO - 8Cut TapeSi4 Channel20 V2.9 nC , 3.5 nCEnhancement  
AO3415E


20V 4.8A 37mΩ@4.5V,4A 1.5W P Channel SOT-23 MOSFETs ROHS
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Bourne 22421
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AUD 0.0517
Multiples of: 10

                   
PJA3407_R1_00001


MOSFET P Trench 30V 3.8A 2.1V @ 250uA 65 mΩ @ 3.8A,10V SOT-23 RoHS
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Panjit 22347
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AUD 0.1067
Multiples of: 1

                   
IRFP4568PBF


MOSFET N Trench 150V 171A 5V @ 250uA 5.9 mΩ @ 103A,10V TO-247 (AC) RoHS
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Infineon 21919
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AUD 2.3756
Multiples of: 1

171 A150 V4.8 mOhmsN - Channel    517 WThrough HoleTO - 247ACTubeSi1 Channel30 V151 nC   
IRF5305STRLPBF


MOSFET P Trench 55V 31A 4V @ 250uA 60 mΩ @ 16A,10V TO-263-2 RoHS
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Infineon 20952
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AUD 0.9328
Multiples of: 800

   P Channel      D2PAKReel       
AON7934


Transistor: N-MOSFET x2; unipolar; 30/30V; 12/14A; 9/10W; DFN8
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Alpha & Omega 20331
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AUD 0.167
Multiples of: 5

                   
FQB19N20LTM


Transistor: N-MOSFET; unipolar; 200V; 13.3A; 140W; D2PAK
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ON Semiconductor 776
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AUD 1.269
Multiples of: 800

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