MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLML5103TRPBF


MOSFET P Trench 30V 760mA 1V @ 250uA 600 mΩ @ 600mA,10V SOT-23 (SOT-23-3) RoHS
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Infineon 695490
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AUD 0.1146
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
SI9407BDY-T1-GE3


MOSFET -60V Vds 20V Vgs SO-8
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Vishay 41016
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AUD 0.4404
Multiples of: 1

4.7 A60 V120 mOhmsP - Channel 1 V- 55 C+ 150 C5 WSmd/SmtSO - 8Cut TapeSi1 Channel10 V14.5 nCEnhancement Trenchfet
SI7898DP-T1-E3


MOSFET 150V Vds 20V Vgs PowerPAK SO-8
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Vishay 22975
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AUD 1.2509
Multiples of: 1

3 A150 V85 mOhmsN - Channel 2 V- 55 C+ 150 C1.9 WSMD/SMTPOWERPAK - SO - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V17 nCEnhancement TrenchFET
BSS670S2LH6327XT


MOSFET OptiMOS Buck Converter Series
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Infineon 22903
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AUD 0.0949
Multiples of: 1

540 mA55 V650 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V1.7 nCEnhancementAec - Q101 
TSM260P02CX6 RFG


MOSFET -20V -6.5A Single P-Channel Power MOSFET
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Taiwan Semiconductor 22862
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AUD 0.314
Multiples of: 1

6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V19.5 nCEnhancement  
SI8806DB-T2-E1


MOSFET 12V 3.9A 0.9W 4.3mOhms @ 4.5V
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Vishay 22845
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AUD 0.2507
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtMICRO - FOOT - 1ReelSi     Microfoot Trenchfet
IPD35N12S3L24ATMA1


MOSFET N-CHANNEL 100+
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Infineon 22763
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AUD 1.0806
Multiples of: 1

35 A120 V24 mOhmsN - Channel 1.7 V- 55 C+ 175 C71 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V39 nCEnhancementAEC - Q101 
IRFB4410PBF


MOSFET N Trench 100V 88A 4V @ 150uA 10 mΩ @ 58A,10V TO-220 (TO-220-3) RoHS
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Infineon 22287
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AUD 1.2119
Multiples of: 1

            Hexfet®      
KM3134K


20V 750mA 330mΩ@4.5V,0.65A 150mW 1.1V@250uA null SOT-723 MOSFETs ROHS
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Yongyutai Electronics 21204
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AUD 0.0193
Multiples of: 20

                   
2N7002LT7G


MOSFET NFET SOT23 60V 115MA 7.5O
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ON Semiconductor 223
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AUD 0.0652
Multiples of: 10

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
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