MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD60NF55LT4


Transistor: N-MOSFET; unipolar; 55V; 42A; 110W; DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 21825
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AUD 0.9465
Multiples of: 2500

            Supermesh      
STD2N80K5


Transistor: N-MOSFET; unipolar; 800V; 1.3A; 45W; DPAK
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STMicroelectronics 21825
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AUD 0.9086
Multiples of: 2500

            Supermesh      
PSMN4R0-30YL,115


MOSFET <=30V N CH TRENCHFET
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Nexperia 21825
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AUD 1.1183
Multiples of: 1

   n - channel  - 55 C+ 175 C smd/smtSOT - 669 (LFPAK)Reel       
STD18NF25


STMicroelectronics MOSFET N-channel 250 V 17A STripFET II
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STMicroelectronics 21825
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AUD 1.7527
Multiples of: 2500

17 A250 V165 mOhmsN - Channel20 V3 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V29.5 nCEnhancementAec - Q101Stripfet
SPP80N03S2L04AKSA1


Infineon Technologies MOSFET N-Ch 30V 80A TO220-3
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Infineon 21825
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AUD 2.0532
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80 A30 V3.6 mOhmsn - channel 1.2 V- 55 C+ 175 C188 Wthrough holeTO - 220 - 3Tubesi1 channel20 V105 nCenhancement  
BUK9240-100A,118


N-Channel 100 V 33A (Tc) 114W (Tc) Surface Mount DPAK
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Nexperia 21825
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AUD 2.0821
Multiples of: 1

33 A100 V38.6 mOhmsN - Channel10 V - 55 C+ 175 C114 WSmd/SmtDPAK - 3ReelSi1 Channel10 V Enhancement  
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) 21820
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AUD 0.041
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340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
BSS205N H6327


Infineon Technologies MOSFET N-Ch 20V 2.5A SOT-23-3
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Infineon 21812
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AUD 0.0887
Multiples of: 1

2.5 A20 V40 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel12 V3.2 nCEnhancementAec - Q101 
SP8M51FRATB


MOSFET Nch+Pch 100V Vds 3A 0.135Rds(on) 8.5Qg
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ROHM 21690
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AUD 1.3846
Multiples of: 1

3 A , 2.5 A100 V120 mOhms , 210 mOhmsN - Channel, P - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel10 v , - 10 V8.5 nC , 12.5 nCEnhancementAec - Q101 
PMGD780SN,115


Mosfet Array 2 N-Channel (Dual) 60V 490mA 410mW Surface Mount 6-TSSOP
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Nexperia 21598
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AUD 0.1166
Multiples of: 1

490 mA60 V780 mOhmsN - Channel20 V - 55 C+ 150 C410 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V Enhancement  
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