MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQU13N06LTU_WS


Fairchild Semiconductor MOSFET 60V N-Channel QFET
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ON Semiconductor 22257
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AUD 0.7474
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11 A60 V115 mOhmsN - Channel  - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel20 V Enhancement  
ZXMHC10A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
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Diodes Incorporated 22209
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AUD 0.8606
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1 a , 850 mA100 V700 mOhms , 1.45 OhmsN - Channel, P - Channel 2 V- 55 C+ 150 C870 mWSmd/SmtSO - 8Cut TapeSi4 Channel20 V2.9 nC , 3.5 nCEnhancement  
SI7336ADP-T1-E3


N-Channel 30 V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 22150
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AUD 1.5497
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
BSC080N03MS G


Infineon Technologies MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
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Infineon 22028
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AUD 0.4929
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13 A30 V8 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
DMP2047UCB4-7


Diodes Incorporated MOSFET P-Ch ENH Mode FET -20V -6
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Diodes Incorporated 20943
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AUD 0.3559
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- 4.1 A- 20 V40 mOhmsP - Channel - 800 mV- 55 C+ 150 C1.66 WSmd/SmtU - WLB1010 - 4Reel- - 6 V2.3 nCEnhancement  
LP3401LT1G


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 70 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Leshan 19031
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AUD 0.042
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BSH103,215


N-Channel 30 V 850mA (Ta) 540mW (Ta) Surface Mount TO-236AB
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Nexperia 18556
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AUD 0.8208
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   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
AP4953A


20V 3A 75mΩ@10V,2.7A 2W 2 P-Channel SOP-8 MOSFETs ROHS
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Quan Li 18371
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AUD 0.112
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S8N10


100V 6.5A 110mΩ 3V N Channel SOT-89-3L MOSFETs ROHS
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HL 16005
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AUD 0.0536
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DMG1012UW-7


MOSFET MOSFET N-CHANNEL SOT-323
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Diodes Incorporated 10233
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AUD 0.1559
Multiples of: 5

1 A20 V450 mOhmsN - Channel 500 mV- 55 C+ 150 C290 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel4.5 V736.6 pCEnhancement  
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