MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM260P02CX6 RFG


MOSFET -20V -6.5A Single P-Channel Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Taiwan Semiconductor 22862
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.314

Multiples of: 1

6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V19.5 nCEnhancement  
2N7002LT7G


MOSFET NFET SOT23 60V 115MA 7.5O
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 22795
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.0421

Multiples of: 1

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
IPP029N06NAKSA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
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Infineon 22795
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 2.3474

Multiples of: 500

            optimos      
ZXMN20B28KTC


MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL
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Diodes Incorporated 22732
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.4348

Multiples of: 1

2.3 A200 V750 mOhmsN - Channel 1.6 V- 55 C+ 150 C4.3 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V8.1 nCEnhancement  
FDU7N60NZTU


Fairchild Semiconductor MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
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ON Semiconductor 22727
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 0.9978

Multiples of: 1

5.5 A600 V1.05 Ohmsn - channel  - 55 C+ 150 C90 Wthrough holeIPAK - 3Tubesi1 channel    unifet
SSM3K122TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.123Ohm @ 4V in UFM package
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Toshiba 22696
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.1467

Multiples of: 1

2 A20 V123 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
IRFP4710PBF


MOSFET N Trench 100V 72A 5.5V @ 250uA 14 mΩ @ 45A,10V TO-247 (AC) RoHS
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Infineon 22673
Ships to you
between Fri. 13 Feb to Thu. 19 Feb
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AUD 2.9384

Multiples of: 1

            Hexfet®      
DMG3420U-7


MOSFET MOSFET,N-CHANNEL
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 22661
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.089

Multiples of: 1

5.47 A20 V29 mOhmsN - Channel 500 mV- 55 C+ 150 C740 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V5.4 nCEnhancement  
LND150K1-G


MOSFET N Trench 500V 13mA (Tj) 1000 Ω @ 500uA,0V SOT-23 (SOT-23-3) RoHS
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Microchip 22637
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.5648

Multiples of: 1

13 mA500 V1 kOhmsN - Channel  - 55 C+ 150 C360 mWSmd/SmtSOT - 23ReelSi1 Channel20 V Depletion  
DMN65D8LFB-7


Diodes Incorporated MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd
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Diodes Incorporated 22357
Ships to you
between Thu. 19 Feb to Mon. 23 Feb
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AUD 0.0591

Multiples of: 1

400 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C430 mWSmd/SmtX1 - DFN1006 - 3Cut TapeSi1 Channel20 V-Enhancement  
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