MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFSL7534PBF


International Rectifier MOSFET 60V Single N-Channel HEXFET Power
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Infineon 23115
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AUD 2.8952
Multiples of: 1

195 A60 V2.4 mOhmsN - Channel 3.7 V  294 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V279 nCEnhancement Strongirfet
SIHD3N50D-BE3


MOSFET 500V N-CH MOSFET
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Vishay 23086
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AUD 0.5385
Multiples of: 1

3 A550 V3.2 OhmsN - Channel 5 V- 55 C+ 150 C69 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 30 V , + 30 V12 nCEnhancement  
TPIRFTS9342TRPBF


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 23042
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AUD 0.1028
Multiples of: 5

                   
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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Taiwan Semiconductor 23013
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AUD 0.9018
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11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
IRF7341GTRPBF


Mosfet Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surface Mount 8-SO
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Infineon 22900
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AUD 1.2747
Multiples of: 1

5.1 A , 5.1 A55 v , 55 V65 mOhms , 65 mOhmsN - Channel 1 v , 1 V- 55 C+ 175 C2.4 WSmd/SmtSO - 8ReelSi2 Channel+/- 20 v , +/- 20 V29 nC , 29 nCEnhancement  
TPM20NB5D6


DFN-6(2x2) MOSFETs ROHS
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TECH PUBLIC 22746
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AUD 0.132
Multiples of: 5

                   
STD20NF06L


null 30A 35mO@15A,10V 55W null TO-252 MOSFETs ROHS
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Youtai 22513
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AUD 0.1898
Multiples of: 5

                   
WNM2030


SOT-723 MOSFETs ROHS
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TECH PUBLIC 17557
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AUD 0.0322
Multiples of: 20

                   
STL60N10F7


MOSFET N-CH 100V 0.013Ohm 12A VII DeepGate
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STMicroelectronics 3538
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AUD 0.7004
Multiples of: 1

12 A100 V16.5 mOhmsN - Channel20 V3.5 V- 55 C+ 175 C5 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V25 nC  Stripfet
IPD25N06S4L30ATMA2


60V 25A 29W 30mO@25A,10V N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 2425
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AUD 0.5082
Multiples of: 2500

25 A60 V30 mOhmsN - Channel 1.7 V- 55 C+ 175 C29 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 16 V , 16 V16.3 nCEnhancementAEC - Q101OptiMOS
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