MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7854TRPBF


MOSFET N Trench 80V 10A 4.9V @ 100uA 13.4 mΩ @ 10A,10V SOP-8_150mil RoHS
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Infineon 23280
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AUD 0.9146
Multiples of: 4000

10 A80 V13.4 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V27 nCEnhancement  
4410


30V 15A 35W 10mΩ@10V,15A N Channel SOP-8 MOSFETs ROHS
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Yongyutai Electronics 23178
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AUD 0.0829
Multiples of: 5

                   
BSP613P H6327


Infineon Technologies MOSFET P-Ch -60V -2.9A SOT-223-3
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Infineon 23126
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AUD 0.4609
Multiples of: 1

2.9 A60 V130 mOhmsP - Channel 2.1 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel- 10 V22 nCEnhancement  
AOD66923


100V 58A 9.2mΩ@10V,20A 73W N Channel TO-252-2 MOSFETs ROHS
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Alpha & Omega 23124
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AUD 0.513
Multiples of: 1

                   
IRFSL7534PBF


International Rectifier MOSFET 60V Single N-Channel HEXFET Power
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Infineon 23115
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AUD 2.8125
Multiples of: 1

195 A60 V2.4 mOhmsN - Channel 3.7 V  294 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V279 nCEnhancement Strongirfet
PMPB19XP,115


NXP Semiconductors MOSFET
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Nexperia 23005
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AUD 0.198
Multiples of: 1

- 10.3 A- 20 V19 mOhmsP - Channel - 0.68 V- 55 C+ 150 C12.5 WSmd/SmtDFN - 2020MD - 6ReelSi1 Channel 28.8 nCEnhancement  
KM3139K


20V 660mA 510mΩ@4.5V,0.5A 150mW 800mV@250uA P Channel SOT-723 MOSFETs ROHS
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Yongyutai Electronics 22989
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AUD 0.0201
Multiples of: 20

                   
BSS138DW-7-F-ES


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 22465
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AUD 0.0357
Multiples of: 20

                   
A09T


SOT-23 MOSFETs ROHS
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OSEN 22193
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AUD 0.0272
Multiples of: 20

                   
IPB081N06L3GATMA1


MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
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Infineon 2910
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AUD 1.0629
Multiples of: 1000

50 A60 V6.7 mOhmsN - Channel 1.2 V- 55 C+ 175 C79 WSmd/SmtTO - 263 - 3ReelSi1 Channel+/- 20 V29 nCEnhancement Optimos
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