MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK10A80E,S4X(S


TO-220SIS MOSFETs ROHS
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Toshiba 54320
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AUD 0.8338
Multiples of: 1

                   
AO3407A


30V 4.5A 1.4W 38m@10V,4.5A 1.5V@250uA 1PCSPChannel SOT-23-3L MOSFETs ROHS
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ElecSuper 27538
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AUD 0.0394
Multiples of: 10

                   
AO4407A


MOSFET P Trench 30V 12A 3V @ 250uA 11 mΩ @ 12A,20V SOIC-8_150mil RoHS
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Alpha & Omega 26718
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AUD 0.1688
Multiples of: 5

           -       
SP000870646


MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 25494
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AUD 0.0821
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190 mA100 V6 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
RQ3E120GNTB


ROHM Semiconductor MOSFET 4.5V Drive Nch MOSFET
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ROHM 25391
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AUD 0.2475
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27 A30 V8.8 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V10 nCEnhancement  
NTMFS5C468NLT1G


MOSFET T6 40V NCH LL IN SO8
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ON Semiconductor 25220
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AUD 0.2371
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37 A40 V17.6 mOhmsN - Channel 1.2 V- 55 C+ 175 C28 WSmd/SmtDFN - 5ReelSi1 Channel+/- 20 V7.3 nCEnhancement  
IRL7833PBF


MOSFET N Trench 30V 150A 2.3V @ 250uA 3.8 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 25220
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AUD 1.496
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150 A30 V4.5 mOhmsN - Channel    140 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V32 nC   
IPP100N08N3GXKSA1


Transistor: N-MOSFET; unipolar; 80V; 70A; 100W; PG-TO220-3
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Infineon 24880
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AUD 1.4946
Multiples of: 1

   N Channel               
AON7544


30V 100A 62.5W 4mΩ@10V 2.5V@250uA N Channel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 21650
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AUD 0.1181
Multiples of: 5

                   
2N7002NXBKR


MOSFET 60 V N-channel Trench MOSFET
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Nexperia 9238
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AUD 0.0393
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270 mA60 V2.8 OhmsN - Channel 1.1 V- 55 C+ 150 C400 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V1 nCEnhancement  
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