MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSM4953DCS RLG


MOSFET -30V, -4.9A, Dual P-Channel Power MOSFET
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Taiwan Semiconductor 24244
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AUD 1.1905
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4.9 A30 V50 mOhmsP - Channel, Pnp 1.5 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi2 Channel- 10 V28 nCEnhancement  
FDN308P(UMW)


SOT-23 MOSFETs ROHS
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Youtai 24220
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AUD 0.0341
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AO3400A


SOT23 MOSFETs ROHS
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TECH PUBLIC 24211
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AUD 0.0347
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IAUZ30N10S5L240ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 24097
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AUD 0.7908
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30 A100 V26 mOhmsN - Channel 1.7 V- 55 C+ 175 C45.5 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V9.5 nCEnhancement  
IAUZ40N10S5N130ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 24027
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AUD 0.9529
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           Cut Tape       
IRFR9014TRPBF-BE3


MOSFET 60V P-CH HEXFET MOSFET D
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Vishay 24020
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AUD 0.781
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5.1 A60 V500 mOhmsP - Channel 4 V- 55 C+ 150 C25 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V12 nCEnhancement  
NVD4808NT4G


MOSFET Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK
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ON Semiconductor 24005
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AUD 0.3702
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63 A30 V8 mOhmsn - channel     smd/smtDPAK - 3Reelsi      
BSS131


SOT-23 MOSFETs ROHS
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HXY MOS 23997
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AUD 0.0864
Multiples of: 5

                   
NCE0102


MOSFET N Trench 100V 2A 2.5V @ 250uA 240 mΩ @ 1A,10V SOT-23 (SOT-23-3) RoHS
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NCE Power 23929
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AUD 0.0515
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FDD14AN06LA0_F085


Fairchild Semiconductor MOSFET 60V N-CHAN PwrTrench
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ON Semiconductor 23929
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AUD 2.0809
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50 A60 V12.8 mOhmsn - channel  - 55 C+ 175 C125 Wthrough holeDPAK - 3Reelsi1 channel     
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