MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WM02N08F


DFN1006-3L MOSFETs ROHS
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Wayon 23939
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AUD 0.0343
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SPP03N60C3XKSA1


Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220
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Infineon 23925
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AUD 0.9609
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3.2 A600 V1.4 Ohmsn - channel     through holeTO - 220 - 3Tubesi1 channel  enhancement coolmos
BSC011N03LSTATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 23852
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AUD 1.7438
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100 A30 V1.1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtPG - TDSON - 8Cut TapeSi1 Channel10 V72 nCEnhancement  
RCX450N20


ROHM Semiconductor MOSFET
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ROHM 23842
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AUD 2.1186
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45 A200 V42 mOhmsN - Channel 3 V- 55 C+ 150 C40 WThrough HoleTO - 220FP - 3BulkSi1 Channel30 V80 nCEnhancement  
PMV48XPAR


NXP Semiconductors MOSFET 20V P-channel Trench MOSFET
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Nexperia 23831
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AUD 0.2568
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3.5 A20 V55 mOhmsP - Channel 750 mV- 55 C+ 150 C930 mWSmd/SmtTO - 236AB - 3ReelSi1 Channel- 4.5 V8.5 nCEnhancement  
IRLML2502TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 23823
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AUD 0.0716
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TN2404K-T1-E3


MOSFET 240V 0.2A 4.0Ohm
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Vishay 23773
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AUD 0.4824
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200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
AO3401


30V 4.2A 50mO@10V,4.2A 1.2W P Channel SOT-23 MOSFETs ROHS
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LGE 22882
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AUD 0.0702
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IRFP250NPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 22881
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AUD 0.8841
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   N - Channel  - 55 C+ 175 C Through HoleTO - 247ACTube       
IPT007N06NATMA1


N-Channel 60 V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1
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Infineon 18311
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AUD 4.4
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300 A60 V0.75 mOhmsN - Channel 2.8 V- 55 C+ 175 C375 WSmd/SmtHSOF - 8ReelSi1 Channel20 V216 nCEnhancement Optimos
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