MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPN60R2K1CEATMA1


Transistor: N-MOSFET; unipolar; 600V; 2.4A; 5W; PG-SOT223
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Infineon 24704
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AUD 0.2305
Multiples of: 1

            Coolmos Ce      
FDMC86248


Fairchild Semiconductor MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm
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ON Semiconductor 24688
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AUD 1.8538
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3.4 A150 V90 mOhmsN - Channel  - 55 C+ 150 C2.3 WSmd/SmtPOWER - 33 - 8ReelSi1 Channel20 V3.7 nC , 6.4 nC  Powertrench
SI2307A


MOSFET P Trench 30V 3A 3V @ 250uA 80 mΩ @ 3A,10V SOT-23 RoHS
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Youtai 24674
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AUD 0.0326
Multiples of: 20

                   
SQ4425EY-T1_GE3


MOSFET P-Channel 30V AEC-Q101 Qualified
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Vishay 24647
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AUD 1.4048
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18 A30 V9 mOhmsP - Channel 2.5 V- 55 C+ 175 C6.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V50 nCEnhancementAec - Q101Trenchfet
FQD18N20V2TM


Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
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ON Semiconductor 24624
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AUD 0.8835
Multiples of: 1

            Qfet®      
DMG6602SVT-7


MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
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Diodes Incorporated 24545
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AUD 0.0964
Multiples of: 5

3.4 A , 2.8 A30 V100 mOhms , 140 mOhmsN - Channel, P - Channel  - 55 C+ 150 C840 mWSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V9 nCEnhancement  
SQ2310ES-T1_BE3


MOSFET N-CHANNEL 20V D-S
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Vishay 24525
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AUD 0.5129
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6 A20 V24 mOhmsN - Channel 1 V- 55 C+ 175 C2 WSMD/SMTSOT - 23 - 3Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 8 V , + 8 V4.5 nCEnhancement TrenchFET
BSS138


50V 220mA 3.5Ω@10V,220mA 225mW 1.6V@1mA null SOT-23 MOSFETs ROHS
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Yongyutai Electronics 24463
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AUD 0.0105
Multiples of: 20

                   
BSS84 PD


50V 130mA 200mW 10Ω@5V,100mA 2.5V@250uA P Channel 73pF@25V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FOSAN 24451
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AUD 0.0139
Multiples of: 50

                   
AUIRFS8405TRL


MOSFET Auto 40V N-Ch FET 1.9mOhm 193A
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Infineon 24337
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AUD 2.4296
Multiples of: 1

120 A40 V1.9 mOhmsn - channel    163 Wsmd/smtD - PAK - 3Reelsi1 channel 107 nC aec - q101coolirfet
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