MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Transistor Polarity
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
60N03


30V 60A 6.5m 2.5V 1PCSNChannel TO-252 MOSFETs ROHS
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HL 25808
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AUD 0.0748
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BSS215P H6327


Infineon Technologies MOSFET P-Ch -20V -1.5A SOT-23-3
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Infineon 25747
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AUD 0.1451
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- 1.5 A- 20 V105 mOhmsP - Channel - 900 mV- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 12 V- 3.6 nCEnhancementAec - Q101 
NTD4904NT4G


MOSFET NFET IPAK 30V 79A 3.7 mOhm
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ON Semiconductor 25641
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AUD 0.6494
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17.8 A30 V5.5 mOhmsn - channel   + 175 C2.6 Wsmd/smtDPAKReelsi1 channel     
BSS123LT1G


SOT-23 MOSFETs ROHS
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TECH PUBLIC 25627
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AUD 0.0224
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DMPH6050SPD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 25585
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AUD 0.7246
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         Smd/SmtPowerdi5060 - C - 8Cut TapeSi      
SI7848BDP-T1-E3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 25543
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AUD 2.2873
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         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
SP000870646


MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 25494
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AUD 0.0821
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190 mA100 V6 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
FDN338P


MOSFET P Trench 20V 1.6A 1.5V @ 250uA 115 mΩ @ 1.6A,4.5V SOT-23 RoHS
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Youtai 25317
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AUD 0.0256
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IRLML0030TRPBF


MOSFET N Trench 30V 5.3A 2.3V @ 25uA 27 mΩ @ 5.2A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 24143
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AUD 0.1034
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5.3 A30 V27 mOhmsN - Channel 1.3 V- 55 C+ 150 C1.3 WSmd/SmtSOT - 23ReelSi1 Channel10 V2.6 nCEnhancement  
IRLR8726TRPBF


N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount D-Pak
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Infineon 23920
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AUD 0.14
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86 A30 V8 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
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