MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL3N65M2


MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
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STMicroelectronics 26395
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AUD 0.5816
Multiples of: 1

2.3 A650 V1.6 OhmsN - Channel 2 V- 55 C+ 150 C22 WSmd/SmtPowerflat - 3.3X3.3 - HV - 8Cut TapeSi1 Channel25 V5 nCEnhancement Mdmesh
IRF2807ZSTRLPBF


International Rectifier MOSFET MOSFT 75V 89A 9.4mOhm 71nC
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Infineon 26384
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AUD 1.909
Multiples of: 1

89 A75 V9.4 mOhmsN - Channel 4 V + 175 C170 WSmd/SmtD - PAK - 3ReelSi1 Channel 110 nC   
FDG330P


Transistor: P-MOSFET; unipolar; -12V; -2A; 0.75W; SC70-6
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ON Semiconductor 26314
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AUD 0.6167
Multiples of: 1

            powertrench®      
BSD316SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
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Infineon 26190
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AUD 0.0185
Multiples of: 3000

            Optimos 2      
BSD235NH6327XTSA1


Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
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Infineon 26190
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AUD 0.1088
Multiples of: 3000

950 mA20 V266 mOhms , 415 mOhmsN - Channel 950 mV- 55 C+ 150 C500 mWSMD/SMTSOT - 363 - 6Reel , Cut TapeSi2 Channel- 12 V , 12 V320 mCEnhancementAEC - Q100 
SI9933CDY-T1-E3


Mosfet Array 2 P-Channel (Dual) 20V 4A 3.1W Surface Mount 8-SOIC
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Vishay 24621
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AUD 0.3494
Multiples of: 1

4 A20 V58 mOhmsP - Channel 600 mV- 50 C+ 150 C3.1 WSMD/SMTSOIC - 8Reel , Cut TapeSi2 Channel- 12 V , 12 V26 nCEnhancement TrenchFET
NX2301PVL


MOSFET NX2301P/TO-236AB/REEL 11" Q3/T
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Nexperia 24326
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AUD 0.0739
Multiples of: 1

2 A20 V120 mOhmsP - Channel 500 mV- 55 C+ 150 C710 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V4.5 nCEnhancement  
IRLML6401GTRPBF


MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
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Infineon 19885
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AUD 0.0732
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4.3 A12 V50 mOhmsp - channel 550 mV- 55 C+ 150 C1.3 Wsmd/smtSOT - 23 - 3Reelsi1 channel8 V10 nC   
2N7002T-7-F


60V 115mA 7.5O@5V,50mA 150mW N Channel SOT-523-3 MOSFETs ROHS
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Diodes Incorporated 17460
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AUD 0.048
Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtSOT - 523 - 3Cut TapeSi1 Channel10 V Enhancement  
AP3003


30V 1.2W 19mΩ@10V,4.2A 1.3V@250uA 1PCSN-Channel&1PCSP-Channel SOT-23-6 MOSFETs ROHS
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Quan Li 7789
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AUD 0.1241
Multiples of: 10

                   
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