MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.4W; TO92
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ON Semiconductor 97127
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AUD 0.1292
Multiples of: 1

                   
DMP3050LVT-7


Diodes Incorporated MOSFET 30V P-CH MOSFET
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Diodes Incorporated 72750
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AUD 0.1517
Multiples of: 3000

- 4.5 A- 30 V50 mOhmsP - Channel - 2 V- 55 C+ 150 C1.8 WSmd/SmtTSOT26Reel-1 Channel+/- 25 V10.5 nCEnhancement  
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor 26374
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AUD 0.9763
Multiples of: 1

4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
FDG330P


Transistor: P-MOSFET; unipolar; -12V; -2A; 0.75W; SC70-6
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ON Semiconductor 26314
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AUD 0.6304
Multiples of: 1

            powertrench®      
BSD316SNH6327XTSA1


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT363
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Infineon 26190
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AUD 0.0751
Multiples of: 3000

            Optimos 2      
BSS314PEH6327XT


MOSFET OptiMOS -P 3 Small Signal Transistor
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Infineon 26190
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AUD 0.1113
Multiples of: 1

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.9 nCEnhancementAec - Q101 
BSS192PH6327FTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
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Infineon 26190
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AUD 0.234
Multiples of: 1000

            Sipmos      
STL8DN6LF6AG


MOSFET LGS LV MOSFET
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STMicroelectronics 26190
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AUD 0.7435
Multiples of: 3000

32 A60 V31 mOhmsN - Channel 1 V- 55 C+ 175 C55 WSmd/SmtPowerflat - 8ReelSi2 Channel+/- 20 V27 nCEnhancementAec - Q101Stripfet
DMC2400UV-7


MOSFET 20V N P Ch 20VDSS 0.45W Low RDSon
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Diodes Incorporated 25624
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AUD 0.087
Multiples of: 1

1030 mA , 700 mA20 V480 mOhms , 970 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel5 V0.07 nC , 0.85 nCEnhancement  
IRLML2803TRPBF


Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
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Infineon 1372
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AUD 0.0925
Multiples of: 5

            Hexfet®      
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