MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP6350S-7


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 221160
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AUD 0.2309
Multiples of: 3000

1.5 A60 V350 mOhmsP - Channel 1 V- 55 C+ 150 C1.17 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 10 V4.1 nCEnhancement  
BSS314PEH6327XT


MOSFET OptiMOS -P 3 Small Signal Transistor
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Infineon 26190
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AUD 0.1113
Multiples of: 1

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel20 V- 2.9 nCEnhancementAec - Q101 
DMG6602SVT-7


MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
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Diodes Incorporated 26190
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AUD 0.1145
Multiples of: 1

3.4 A , 2.8 A30 V100 mOhms , 140 mOhmsN - Channel, P - Channel  - 55 C+ 150 C840 mWSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V9 nCEnhancement  
SI7469DP-T1-E3


P-Channel 80 V 28A (Tc) 5.2W (Ta), 83.3W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 26190
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AUD 1.1892
Multiples of: 3000

28 A- 80 V25 mOhmsP - Channel20 V - 55 C+ 150 C83 WSmd/SmtSO - 8Reel    Enhancement  
FDMC86102LZ


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 26190
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AUD 1.434
Multiples of: 3000

7 A100 V24 mOhmsN - Channel 1.6 V- 55 C+ 150 C41 WSmd/SmtMLP - 8ReelSi1 Channel20 V15.3 nC  Powertrench
FDD3510H


Fairchild Semiconductor MOSFET 80V Dual N & P-Chan PowerTrench
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ON Semiconductor 26180
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AUD 0.9868
Multiples of: 1

4.3 A80 V80 mOhmsn - channel, p - channel20 V - 55 C+ 150 C3.1 Wsmd/smtDPAK - 3Reelsi2 channel20 V enhancement powertrench
FDC608PZ


Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
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ON Semiconductor 23280
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AUD 0.2733
Multiples of: 3000

5.8 A20 V30 mOhmsP - Channel 1.5 V- 55 C+ 150 C1.6 WSMD/SMTSSOT - 6Reel , Cut TapeSi1 Channel- 12 V , 12 V23 nCEnhancement PowerTrench
SIA461DJ-T1-GE3


Vishay Semiconductors MOSFET -20V -12A 17.9W 33mohm 4.5V
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Vishay 17460
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AUD 0.1906
Multiples of: 3000

12 A20 V33 mOhmsP - Channel 400 mV- 55 C+ 150 C17.9 WSmd/SmtSC - 70 - 6-Si1 Channel- 4.5 V18 nCEnhancement Trenchfet, Powerpak
SI1967DH-T1-GE3


MOSFET 20V 1.3A DUAL P-CH MOSFET
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Vishay 17460
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AUD 0.2344
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtSC - 70 - 6Reel       
DN1509K1-G


Transistor: N-MOSFET; unipolar; 90V; 0.3A; 490mW; SOT23-3
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Microchip 14550
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AUD 1.1443
Multiples of: 3000

                   
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