MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3050LSS-13


Diodes Incorporated MOSFET 30V P-CH MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 24250
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AUD 0.2955
Multiples of: 2500

4.8 A30 V36 mOhmsn - channel 2 V- 55 C+ 150 C1.7 Wsmd/smtSO - 8Tape And Reelsi1 channel25 V10.5 nCenhancement  
STD20NF06T4


Transistor: N-MOSFET; unipolar; 60V; 24A; 60W; DPAK
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STMicroelectronics 24250
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AUD 0.7045
Multiples of: 2500

            Supermesh      
RFD16N05LSM9A


Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
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ON Semiconductor 24250
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AUD 0.8073
Multiples of: 2500

                   
BSC028N06NSATMA1


MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
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Infineon 24250
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AUD 1
Multiples of: 5000

100 A60 V2.5 mOhmsN - Channel 2.1 V- 55 C+ 150 C83 WSmd/SmtPG - TDSON - 8ReelSi1 Channel20 V49 nCEnhancement Optimos
TSM4953DCS RLG


MOSFET -30V, -4.9A, Dual P-Channel Power MOSFET
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Taiwan Semiconductor 24244
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AUD 1.1905
Multiples of: 1

4.9 A30 V50 mOhmsP - Channel, Pnp 1.5 V- 55 C+ 150 C2.5 WSmd/SmtSOP - 8Cut TapeSi2 Channel- 10 V28 nCEnhancement  
Hot IRF4905PBF


MOSFET P Trench 55V 74A 4V @ 250uA 20 mΩ @ 38A,10V TO-220 (TO-220-3) RoHS
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Infineon 24186
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AUD 0.6283
Multiples of: 1

74 A55 V20 mOhmsP - Channel    200 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC   
NCE4614


MOSFET N & P Trench 40V 8A (Tc),7A (Tc) 2V @ 250uA 19 mΩ @ 8A,10V;35 mΩ @ 8A,10V SOIC-8_150mil RoHS
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NCE Power 24085
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AUD 0.2197
Multiples of: 5

                   
IRFB3607PBF


MOSFET N Trench 75V 80A 4V @ 100uA 9 mΩ @ 46A,10V TO-220 (TO-220-3) RoHS
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Infineon 22770
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AUD 0.3992
Multiples of: 1

            Hexfet®      
NDS9948


Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
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ON Semiconductor 2554
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AUD 0.4324
Multiples of: 1

            Powertrench®      
TPN2R703NL,L1Q


N-Channel 30 V 45A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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Toshiba 0
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AUD 0.5311
Multiples of: 5000

45 A30 V3.3 mOhmsn - channel 1.3 v to 2.3 V- 55 C+ 150 C42 Wsmd/smtTSON - 8Reelsi1 channel20 V21 nCenhancement  
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