MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123


100V 170mA 6Ω@10V 0.35W N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 25705
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AUD 0.0169
Multiples of: 20

                   
AO3480


SOT-23 MOSFETs ROHS
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TECH PUBLIC 25675
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AUD 0.0386
Multiples of: 10

                   
NTD4904NT4G


MOSFET NFET IPAK 30V 79A 3.7 mOhm
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ON Semiconductor 25641
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AUD 0.6907
Multiples of: 1

17.8 A30 V5.5 mOhmsn - channel   + 175 C2.6 Wsmd/smtDPAKReelsi1 channel     
RV3C002UNT2CL


MOSFET 20V Vdss 2ohm Rds on Id +/-150mA N-Ch
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ROHM 25622
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AUD 0.1798
Multiples of: 1

150 mA20 V5.4 OhmsN - Channel 300 mV- 55 C+ 150 C100 mWSmd/SmtVML0604 - 3ReelSi1 Channel+/- 10 V Enhancement  
5N10-MS


100V 5A N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 25601
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AUD 0.0451
Multiples of: 10

                   
DMPH6050SPD-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 25585
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AUD 0.7246
Multiples of: 1

         Smd/SmtPowerdi5060 - C - 8Cut TapeSi      
SI7848BDP-T1-E3


MOSFET 40V Vds 20V Vgs PowerPAK SO-8
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Vishay 25543
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AUD 2.2873
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         Smd/SmtPOWERPAK - SO - 8Cut TapeSi     Trenchfet
DMP1045UQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 25504
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AUD 0.1484
Multiples of: 1

5.2 A12 V26 mOhmsP - Channel 300 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel- 4.5 V15.8 nCEnhancementAec - Q101 
SP000870646


MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 25494
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AUD 0.0821
Multiples of: 1

190 mA100 V6 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT - 23 - 3ReelSi1 Channel20 V600 pCEnhancementAec - Q101 
DMN2600UFB-7


MOSFET N Trench 25V 1.3A 1V @ 250uA 350 mΩ @ 200mA,4.5V X1-DFN1006-3 RoHS
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Diodes Incorporated 25416
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AUD 0.0594
Multiples of: 1

1.3 A25 V600 mOhmsN - Channel     Smd/SmtDFN - 1006 - 3Reel       
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