MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SPP03N60C3XKSA1


Trans MOSFET N-CH 650V 3.2A 3-Pin(3+Tab) TO-220
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Infineon 23925
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AUD 0.6774
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3.2 A600 V1.4 Ohmsn - channel     through holeTO - 220 - 3Tubesi1 channel  enhancement coolmos
FQU13N06LTU_WS


Fairchild Semiconductor MOSFET 60V N-Channel QFET
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ON Semiconductor 23921
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AUD 0.7037
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11 A60 V115 mOhmsN - Channel  - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel20 V Enhancement  
DMP3007SCG-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 23890
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AUD 0.4575
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         Smd/SmtV - DFN3333 - B - 8Cut TapeSi      
SH8K32TB1


Mosfet Array 2 N-Channel (Dual) 60V 4.5A 2W Surface Mount 8-SOP (5.0x6.0)
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ROHM 23850
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AUD 1.3235
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4.5 A60 V55 mOhmsN - Channel   + 150 C2 WSmd/SmtSOP - 8ReelSi      
2SK2009TE85LF


Transistors RF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V
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Toshiba 23836
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AUD 0.2759
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200 mA30 V1.2 OhmsN - Channel+/- 20 V1.5 V- 55 C+ 150 C200 mWSmd/SmtSOT - 346ReelMosfet1 Channel2.5 V Enhancement  
BSS205N H6327


Infineon Technologies MOSFET N-Ch 20V 2.5A SOT-23-3
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Infineon 23825
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AUD 0.0943
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2.5 A20 V40 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel12 V3.2 nCEnhancementAec - Q101 
PSMN027-100PS,127


NXP Semiconductors MOSFET N-CH 100V STD LEVEL MOSFET
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Nexperia 23811
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AUD 1.2833
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37 A100 V48 mOhmsN - Channel20 V4.8 V- 55 C+ 175 C103 WThrough HoleTO - 220 - 3TubeSi1 Channel10 V30 nCEnhancement  
RQ5H030TNTL


MOSFET NCH 45V 3A SMALL SIGNAL
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ROHM 23789
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AUD 0.4522
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3 A45 V67 mOhmsN - Channel 500 mV- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel12 V6.2 nCEnhancement  
IRLML2244TRPBF


MOSFET P Trench 20V 4.3A 1.1V @ 10uA 54 mΩ @ 4.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 23759
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AUD 0.11
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            Hexfet®      
ZXMN20B28KTC


MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL
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Diodes Incorporated 23732
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AUD 0.4214
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2.3 A200 V750 mOhmsN - Channel 1.6 V- 55 C+ 150 C4.3 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V8.1 nCEnhancement  
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