MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
4407A


30V 12A 9.5mΩ 2.5V P Channel SOP-8 MOSFETs ROHS
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HL 23391
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AUD 0.1009
Multiples of: 5

                   
Hot IRFP260MPBF


MOSFET N Trench 200V 50A 4V @ 250uA 40 mΩ @ 28A,10V TO-247 (AC) RoHS
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Infineon 23373
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AUD 0.8765
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
IRL3705ZSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
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Infineon 23328
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AUD 1.7023
Multiples of: 1

86 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtD2PAKReelSi1 Channel 60 nC   
SN7002NH6327XTSA2


MOSFET N-Ch 60V 200mA SOT-23-3
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Infineon 23280
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AUD 0.0625
Multiples of: 3000

200 mA60 V5 OhmsN - Channel 800 mV- 55 C+ 150 C0.36 WSmd/SmtPG - SOT - 23 - 3Cut TapeSi1 Channel10 V1 nC   
SSM3K56FS,LF


Toshiba MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
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Toshiba 23280
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AUD 0.0929
Multiples of: 3000

8 A20 V840 mOhmsN - Channel 0.4 v to 1 V- 55 C+ 150 C150 mWSmd/SmtSSM - 3ReelSi1 Channel8 V1 nCEnhancement  
SSM3K341R,LF


MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET
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Toshiba 23255
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AUD 0.1539
Multiples of: 5

6 A60 V69 mOhmsN - Channel 1.5 V- 55 C+ 175 C1.2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel+/- 20 V9.3 nCEnhancement  
NTZD3154NT1G


MOSFET 20V 540mA Dual N-Channel w/ESD
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ON Semiconductor 23052
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AUD 0.1215
Multiples of: 5

570 mA20 V550 mOhms , 550 mOhmsN - Channel 450 mV- 55 C+ 150 C280 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel4.5 V1.5 nC , 1.5 nCEnhancement  
IRFR4620TRLPBF


International Rectifier MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
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Infineon 22914
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AUD 0.8694
Multiples of: 1

24 A200 V78 mOhmsN - Channel20 V - 55 C+ 175 C144 WSmd/SmtDPAK - 3ReelSi1 Channel20 V25 nCEnhancement  
HY19P03D


MOSFET P Trench 30V 90A (Tc) 3V @ 250uA 6 mΩ @ 45A,10V TO-252-2L RoHS
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HUAYI 21451
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AUD 0.3192
Multiples of: 5

                   
BSS84Q-7-F


50V 130mA 300mW 10O@10V,12.6A P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 218
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AUD 0.08
Multiples of: 5

- 130 mA- 50 V10 OhmsP - Channel - 2 V- 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.29 nCEnhancementAec - Q101 
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