MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB017N10N5ATMA1


Infineon Technologies MOSFET N-Ch 100V 180A D2PAK-2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 27156
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AUD 4.2868
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180 A100 V2.2 mOhmsN - Channel+/- 20 V2.2 V- 55 C+ 175 C375 WSmd/SmtD2PAK - 7ReelSi1 Channel10 V168 nCEnhancement Optimos
FDME430NT


MOSFET 30V N-Channel PowerTrench MOSFET
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ON Semiconductor 24769
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AUD 0.3952
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6 A30 V40 mOhmsn - channel 1.5 V- 55 C+ 150 C2.1 Wsmd/smtMICRO - FET 1.6 x 1.6 TH inReelsi1 channel 6.5 nC  powertrench
DN3535N8-G


Transistor: N-MOSFET; unipolar; 350V; 0.2A; 1.6W; SOT89-3
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Microchip 24735
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AUD 1.151
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230 mA350 V10 OhmsN - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Depletion  
MMBF170-7-F


N-Channel 60 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 23231
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AUD 0.0407
Multiples of: 10

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
AO4459


SOP-8 MOSFETs ROHS
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Youtai 20302
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AUD 0.0572
Multiples of: 10

                   
10N06Q


SOT-89-3L MOSFETs ROHS
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HL 16412
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AUD 0.0443
Multiples of: 10

                   
NX3008CBKS,115


NXP Semiconductors MOSFET 3030V, 350200 MA NP-CH TRENCH MOSFET
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Nexperia 2621
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AUD 0.0833
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350 mA , - 200 mA30 V1.4 OhmsN - Channel, P - Channel - 0.9 v , 0.9 V- 55 C+ 150 C990 mWSmd/SmtSC - 88 - 6ReelSi2 Channel 0.52 nCEnhancement  
SI1539CDL-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 0.7 Amps 0.34 Watts
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Vishay 1319
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AUD 0.1721
Multiples of: 5

700 mA30 V323 mOhms , 740 mOhmsN - Channel, P - Channel20 V1.2 v , 2.5 V- 55 C+ 150 C340 mWSmd/SmtSC - 70 - 6ReelSi2 Channel20 V1 nCEnhancement Trenchfet
PMGD290XN,115


Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP
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Nexperia 804
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AUD 0.1116
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860 mA20 V350 mOhmsN - Channel 500 mV- 55 C+ 150 C0.41 WSmd/SmtSOT - 363ReelSi2 Channel4.5 V0.72 nCEnhancement  
Hot IRF7855TRPBF


Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
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Infineon 510
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AUD 0.7221
Multiples of: 1

12 A60 V7.4 mOhmsN - Channel 4.9 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V26 nC   
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