MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS84,215


P-Channel 50 V 130mA (Ta) 250mW (Tc) Surface Mount TO-236AB
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Nexperia 25840
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AUD 0.0621
Multiples of: 5

   P - Channel  - 65 C+ 150 C Smd/SmtSOT - 23Reel       
AO4459


MOSFET P Trench 30V 6.5A 2.5V @ 250uA 46 mΩ @ 6.5A,10V SOP-8_150mil RoHS
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Alpha & Omega 24832
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AUD 0.1082
Multiples of: 5

                   
KIRLML5203TRPBF


30V 3A 98Ω@10V,3A 1.25W P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 22950
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AUD 0.0436
Multiples of: 10

                   
SSM3K318R,LF


Toshiba MOSFET Small Signal Mosfet
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Toshiba 22916
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AUD 0.0908
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2.5 A60 V107 mOhmsN - Channel 1.8 V + 150 C2 WSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V7 nCEnhancement  
TSM900N06CH X0G


MOSFET 60V 11A Single N-Channel Power MOSFET
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Taiwan Semiconductor 22916
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AUD 0.9154
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11 A60 V76 mOhmsN - Channel 1.2 V + 150 C25 WThrough HoleTO - 251S - 3TubeSi1 Channel10 V9.3 nCEnhancement  
BSS670S2LH6327XT


MOSFET OptiMOS Buck Converter Series
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Infineon 22903
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AUD 0.0949
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540 mA55 V650 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V1.7 nCEnhancementAec - Q101 
TSM260P02CX6 RFG


MOSFET -20V -6.5A Single P-Channel Power MOSFET
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Taiwan Semiconductor 22862
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AUD 0.314
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6.5 A20 V21 mOhmsP - Channel 300 mV- 55 C+ 150 C1.56 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel4.5 V19.5 nCEnhancement  
BSC054N04NSGATMA1


Transistor: N-MOSFET; unipolar; 40V; 81A; 57W; PG-TDSON-8
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Infineon 22841
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AUD 0.2939
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81 A40 V4.5 mOhmsN - Channel 2 V- 55 C+ 150 C57 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V34 nCEnhancement OptiMOS
IRFR5305TRLPBF


Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
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Infineon 22837
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AUD 0.7197
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31 A55 V65 mOhmsP - Channel  - 55 C+ 175 C110 WSmd/SmtDPAKReelSi1 Channel20 V42 nCEnhancement  
RYC002N05T316


MOSFET 0.9V Drive Nch Si MOSFET
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ROHM 22746
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AUD 0.0473
Multiples of: 10

200 mA50 V1.6 OhmsN - Channel 300 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel8 V Enhancement  
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