MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM3K122TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=20V VGSS=+-10V ID=2.0A RDSON=0.123Ohm @ 4V in UFM package
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Toshiba 22696
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AUD 0.1467
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2 A20 V123 mOhmsN - Channel 1 V- 55 C+ 150 C500 mWSmd/SmtUFM - 3Cut TapeSi1 Channel10 V3.4 nCEnhancement U - Mosiii
HYG038N03LR1C2


PDFN-8L(5x6) MOSFETs ROHS
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HuaYi 22586
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AUD 0.2278
Multiples of: 5

                   
FDMS7694


MOSFET 30V NCh PowerTrench MOSFET
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ON Semiconductor 22556
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AUD 0.375
Multiples of: 1

13.2 A30 V11.1 mOhmsN - Channel 1 V- 55 C+ 150 C27 WSmd/SmtPOWER - 56ReelSi1 Channel20 V15 nCEnhancement Powertrench
SSM6J808R,LF


MOSFETs
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Toshiba 22539
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AUD 0.2954
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           Reel , Cut TapeSi    AEC - Q101 
HYG009N04LS1C2


40V 200A 0.75Ω@10V,40A 75W 1.8V@250uA 58pF@25V N Channel 5876pF@25V 41nC@4.5V -55℃~+175℃@(Tj) PDFN5x6-8L MOSFETs ROHS
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HuaYi 22419
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AUD 0.7529
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NCE4080K


MOSFET N Trench 40V 80A (Tc) 2.5V @ 250uA 7 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 21303
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AUD 0.2255
Multiples of: 1

                   
SI3443CDV-T1-E3


MOSFET 20V 4.7A 3.2W 60mohm @ 4.5V
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Vishay 19697
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AUD 0.2829
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   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
BSS84


Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.36W; SOT23
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ON Semiconductor 19354
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AUD 0.07
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   P Channel               
BSH111BKR


Transistor: N-MOSFET; unipolar; 55V; 0.13A; 364mW; SOT23
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Nexperia 4975
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AUD 0.0503
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IPP50R190CEXKSA1


Transistor: N-MOSFET; unipolar; 500V; 18.5A; 127W; PG-TO220-3
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Infineon 446
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AUD 1.3467
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