MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7370DP-T1-E3


MOSFET 60V Vds 20V Vgs PowerPAK SO-8
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Vishay 23125
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AUD 1.9556
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel      Trenchfet/Powerpak
IRFSL7534PBF


International Rectifier MOSFET 60V Single N-Channel HEXFET Power
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Infineon 23115
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AUD 3.125
Multiples of: 1

195 A60 V2.4 mOhmsN - Channel 3.7 V  294 WThrough HoleTO - 262 - 3TubeSi1 Channel20 V279 nCEnhancement Strongirfet
SIHD3N50D-BE3


MOSFET 500V N-CH MOSFET
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Vishay 23086
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AUD 0.5385
Multiples of: 1

3 A550 V3.2 OhmsN - Channel 5 V- 55 C+ 150 C69 WSMD/SMTTO - 252 - 3TubeSi1 Channel- 30 V , + 30 V12 nCEnhancement  
MMBT3906M


SOT-723 MOSFETs ROHS
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TECH PUBLIC 23066
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AUD 0.027
Multiples of: 20

                   
IPD35N12S3L24ATMA1


MOSFET N-CHANNEL 100+
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Infineon 22966
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AUD 1.0948
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          TO - 252 - 3ReelSi      
RQ6L020SPTCR


MOSFET Pch -60V 2A 1.25W SOT-457T
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ROHM 22963
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AUD 0.6918
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2 A60 V210 mOhmsP - Channel - 3 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 475T - 6Cut Tape 1 Channel20 V7.2 nCEnhancement  
SSM6L56FE,LM


MOSFET Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W
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Toshiba 22940
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AUD 0.0743
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           Cut Tape       
BSS670S2LH6327XT


MOSFET OptiMOS Buck Converter Series
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Infineon 22903
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AUD 0.0949
Multiples of: 1

540 mA55 V650 mOhmsN - Channel 1.2 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V1.7 nCEnhancementAec - Q101 
AO4480


N-Channel 40 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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Alpha & Omega 22018
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AUD 0.3834
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14 A  N    3.1 WSurface Mount      Enhancement  
DMG2305UXQ-7


20V 4.2A 52mO@4.5V,4.2A 1.4W P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated 17256
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AUD 0.0667
Multiples of: 10

4.2 A20 V52 mOhmsP - Channel 500 mV- 55 C+ 150 C1.4 WSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V10.2 nCEnhancementAec - Q101 
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