MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR8726TRPBF


N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount D-Pak
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Infineon 57938
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AUD 0.1367
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86 A30 V8 mOhmsN - Channel 2.35 V- 55 C+ 175 C75 WSmd/SmtDPAKReelSi1 Channel20 V15 nCEnhancement  
BSC080N03MS G


Infineon Technologies MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M
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Infineon 22028
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AUD 0.4929
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13 A30 V8 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
Hot BSC014N04LSI


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
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Infineon 21996
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AUD 0.7056
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100 A40 V1.45 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V55 nCEnhancement  
AO3407


New Quadratic Unclassified Data SOT-23 RoHS
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Microdiode Electronics 21922
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AUD 0.0437
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NVMFS6H864NLT1G


MOSFET MOSFET - Power Single N-Channel 80 V 29 m O 22 A - NVMFS6H864NL DFN5 Pb-Free
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ON Semiconductor 21899
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AUD 0.6836
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22 A80 V29 mOhmsN - Channel 2 V- 55 C+ 175 C33 WSMD/SMTSO - 8FL - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V9 nCEnhancementAEC - Q101 
ZXMP6A13FTA


SOT-23 MOSFETs ROHS
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TECH PUBLIC 21888
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AUD 0.098
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2N7002-G


MOSFET BVDD=60V ID=200mA
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Comchip 21867
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AUD 0.0613
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115 mA60 V N - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel60 V-Enhancement  
SUD50P06-15-BE3


MOSFET P-CHANNEL 60V D-S
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Vishay 21774
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AUD 1.8071
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           Cut Tape       
BSS138BKT116


MOSFET N CHAN 60V SOT23
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ROHM 19904
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AUD 0.0424
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NCE6050KA


MOSFET N Trench 60V 50A 2.5V @ 250uA 20 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 18551
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AUD 0.1824
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