MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HL2302


20V 3A 700mW 55m@4.5V,2.5A 750mV@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

hongjiacheng 68055
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AUD 0.0199
Multiples of: 20

                   
US6M2TR


Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6
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ROHM 23280
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AUD 0.1945
Multiples of: 3000

1 A , 1.5 A20 v , 30 V240 mOhms , 390 mOhmsN And P - Channel 700 mV , 500 mV- 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
DMP2069UFY4-7


MOSFET MOSFET P-CHAN.
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Diodes Incorporated 23280
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AUD 0.2451
Multiples of: 1

2.5 A20 V36 mOhmsP - Channel 1 V- 55 C+ 150 C530 mWSMD/SMTX2 - DFN2015 - 3Reel , Cut TapeSi1 Channel- 8 V , 8 V9.1 nCEnhancement  
SI3473CDV-T1-E3


MOSFET 12V 8.0A 4.2W 22mohm @ 4.5V
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Vishay 23280
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AUD 0.2987
Multiples of: 3000

   P - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6ReelSi     Trenchfet
SI1441EDH-T1-BE3


P-Channel 20V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 23280
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AUD 0.3881
Multiples of: 1

4 A20 V34 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 10 V , 10 V33 nCEnhancement TrenchFET
IRLML0040


40V 3.6A N Channel SOT-23 MOSFETs ROHS
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Hottech 16945
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AUD 0.0524
Multiples of: 10

                   
NTK3043NT1G


N-Channel 20 V 210mA (Ta) 310mW (Ta) Surface Mount SOT-723
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ON Semiconductor 13580
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AUD 0.0739
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 723 - 3Reel       
NTJD4152PT2G


MOSFET PFET SC88 20V 88MA 2
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ON Semiconductor 7895
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AUD 0.1472
Multiples of: 1

880 mA20 V1 OhmsP - Channel 450 mV- 55 C+ 150 C350 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel- 1.8 V2.2 nCEnhancement  
SI3456DDV-T1-GE3


MOSFET 30V 6.3A 2.7W 40mohm @ 10V
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Vishay 3487
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AUD 0.2376
Multiples of: 5

   N - Channel  - 55 C+ 150 C Smd/SmtTSOP - 6Reel       
STL8DN6LF6AG


MOSFET LGS LV MOSFET
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STMicroelectronics 2691
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AUD 0.6531
Multiples of: 1

32 A60 V31 mOhmsN - Channel 1 V- 55 C+ 175 C55 WSmd/SmtPowerflat - 8ReelSi2 Channel+/- 20 V27 nCEnhancementAec - Q101Stripfet
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