MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
20N06


60V 20A 25mΩ 2.5V N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 22518
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AUD 0.092
Multiples of: 5

                   
FQT7N10TF


100V 1.7A 350mO@850mA,10V 2W null SOT-223-4 MOSFETs ROHS
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ON Semiconductor 22512
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AUD 0.4052
Multiples of: 1

1.7 A100 V350 mOhmsN - Channel  - 55 C+ 150 C2 WSmd/SmtSOT - 223ReelSi1 Channel25 V Enhancement  
IRF7815TRPBF


Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
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Infineon 22507
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AUD 0.8206
Multiples of: 1

5.1 A150 V34 mOhmsN - Channel 4 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V25 nC   
AO3415E


20V 4.8A 37mΩ@4.5V,4A 1.5W P Channel SOT-23 MOSFETs ROHS
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Bourne 22421
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AUD 0.0517
Multiples of: 10

                   
BSS123LT1G


MOSFET 100V 170mA N-Channel
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ON Semiconductor 22387
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AUD 0.0289
Multiples of: 20

170 mA100 V6 OhmsN - Channel 1.6 V- 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
Hot IRF5210PBF


MOSFET P Trench 100V 40A 4V @ 250uA 60 mΩ @ 24A,10V TO-220 (TO-220-3) RoHS
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Infineon 22381
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AUD 1.1376
Multiples of: 1

            Hexfet®      
STF13N60M2


Transistor: N-MOSFET; unipolar; 600V; 7A; 25W; TO220FP
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STMicroelectronics 22316
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AUD 0.6
Multiples of: 1

            Mdmesh      
ZXMN3A03E6TA


N-Channel 30 V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 22313
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AUD 0.4802
Multiples of: 1

4.6 A30 V65 mOhmsN - Channel  - 55 C+ 150 C1.1 WSmd/SmtSOT - 26 - 6Cut TapeSi1 Channel20 V Enhancement  
IRLZ44NPBF


MOSFET N Trench 55V 47A 2V @ 250uA 22 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon 22280
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AUD 0.8137
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41 A55 V35 mOhmsN - Channel    83 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V32 nC   
SUD50P10-43L-E3


MOSFET 100V 37A 136W 43mohm @ 10V
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Vishay 22280
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AUD 1.8333
Multiples of: 1

37.1 A100 V43 mOhmsP - Channel 1 V- 55 C+ 175 C136 WSmd/SmtTO - 252 - 3ReelSi1 Channel- 10 V106 nCEnhancement Trenchfet
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