MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN6075S-7


MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
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Diodes Incorporated 22639
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AUD 0.2312
Multiples of: 5

2.5 A60 V85 mOhmsN - Channel 1 V- 55 C+ 150 C1.15 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V12.3 nCEnhancement  
PJE138K_R1_00001


MOSFET /8KT/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-50TBMN/NF50TB-QI01/PJ///
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Panjit 22514
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AUD 0.0534
Multiples of: 1

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IRLZ14PBF


MOSFET RECOMMENDED ALT 844-IRLZ14PBF
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Vishay 22382
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AUD 0.668
Multiples of: 1

10 A60 V200 mOhmsN - Channel 1 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel5 V8.4 nCEnhancement  
LBSS138WT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SC-70 RoHS
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Leshan 22280
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AUD 0.0503
Multiples of: 10

                   
PPMT30V4


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 60 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Prisemi 22174
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AUD 0.0332
Multiples of: 10

                   
ZXMHC10A07N8TC


Mosfet Array 2 N and 2 P-Channel (Half Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
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Diodes Incorporated 22136
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AUD 0.836
Multiples of: 1

1 a , 850 mA100 V700 mOhms , 1.45 OhmsN - Channel, P - Channel 2 V- 55 C+ 150 C870 mWSmd/SmtSO - 8Cut TapeSi4 Channel20 V2.9 nC , 3.5 nCEnhancement  
20P03


30V 20A 36mΩ 2.5V P Channel TO-252 MOSFETs ROHS
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HL 21980
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AUD 0.0733
Multiples of: 10

                   
AO3400A


MOSFET N Channel 30V 5.2A 1.5V @ 250uA 35mΩ @ 5A,10V SOT-23 RoHS
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HUASHUO 21863
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AUD 0.0368
Multiples of: 20

                   
BLM3400S3


SOT-23 MOSFETs ROHS
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TECH PUBLIC 19322
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AUD 0.0399
Multiples of: 10

                   
WPM3407-3/TR


MOSFET P Trench 30V 3.7A 3V @ 250uA 46 mΩ @ 4.4A,10V SOT-23 (SOT-23-3) RoHS
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Will Semiconductor 11344
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AUD 0.0966
Multiples of: 5

                   
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