MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
US6M2TR


Mosfet Array N and P-Channel 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6
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ROHM 23280
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AUD 0.2007
Multiples of: 3000

1 A , 1.5 A20 v , 30 V240 mOhms , 390 mOhmsN And P - Channel 700 mV , 500 mV- 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi2 Channel4.5 V1.6 nC , 2.1 nCEnhancement  
SSM3K2615R,LF


N-Channel 60 V 2A (Ta) 1W (Ta) Surface Mount SOT-23F
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Toshiba 23280
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AUD 0.288
Multiples of: 3000

2 A60 V580 mOhmsN - Channel 800 mV- 55 C+ 150 C2 WSmd/SmtSOT - 23F - 3ReelSi1 Channel+/- 20 V6 nCEnhancement  
DMP2069UFY4-7


MOSFET MOSFET P-CHAN.
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Diodes Incorporated 23280
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AUD 0.2451
Multiples of: 1

2.5 A20 V36 mOhmsP - Channel 1 V- 55 C+ 150 C530 mWSMD/SMTX2 - DFN2015 - 3Reel , Cut TapeSi1 Channel- 8 V , 8 V9.1 nCEnhancement  
SI2366DS-T1-GE3


Vishay Semiconductors MOSFET 30 Volts 5.8 Amps 2.1 Watts
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Vishay 23280
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AUD 0.2538
Multiples of: 3000

5.8 A30 V36 mOhmsN Channel 1.2 V- 55 C+ 150 C2.1 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V6.4 nCEnhancement Trenchfet
SI1965DH-T1-GE3


Vishay Semiconductors MOSFET 12V 1.3A 1.25W 390mohm 4.5V
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Vishay 23280
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AUD 0.3571
Multiples of: 3000

1.14 A- 12 V390 mOhmsP - Channel - 1 V- 55 C+ 150 C740 mWSmd/SmtSC - 70 - 6ReelSi 8 V2.8 nC  Trenchfet
SI1441EDH-T1-BE3


P-Channel 20V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
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Vishay 23280
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AUD 0.3881
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4 A20 V34 mOhmsP - Channel 1 V- 55 C+ 150 C1.6 WSMD/SMTSOT - 363 - 6Reel , Cut TapeSi1 Channel- 10 V , 10 V33 nCEnhancement TrenchFET
STL42P4LLF6


STMicroelectronics MOSFET
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STMicroelectronics 23280
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AUD 0.6232
Multiples of: 3000

42 A40 V10.5 mOhmsP - Channel 2.5 V + 175 C75 WSmd/SmtPowerflat - 8ReelSi1 Channel20 V22 nCEnhancement Stripfet
STL60N10F7


MOSFET N-CH 100V 0.013Ohm 12A VII DeepGate
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STMicroelectronics 14550
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AUD 0.8793
Multiples of: 3000

12 A100 V16.5 mOhmsN - Channel20 V3.5 V- 55 C+ 175 C5 WSmd/SmtPowerflat - 8 5X6ReelSi1 Channel20 V25 nC  Stripfet
SQJ409EP-T1_GE3


MOSFET -40V Vds PowerPAK AEC-Q101 Qualified
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Vishay 9388
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AUD 1.0659
Multiples of: 1

60 A40 V7 mOhmsP - Channel 2 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V170 nC Aec - Q101Trenchfet
FDN342P


Transistor: P-MOSFET; unipolar; -20V; -2A; 0.5W; SuperSOT-3
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ON Semiconductor 494
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AUD 0.3573
Multiples of: 1

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