MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZVP4525GTA


P-Channel 250 V 265mA (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 23731
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AUD 0.4156
Multiples of: 1

265 mA285 V10 OhmsP - Channel 2 V- 55 C+ 150 C2 WSmd/SmtSOT - 223 - 3Cut TapeSi1 Channel40 V3.45 nCEnhancement  
NX7002AKVL


MOSFET NX7002AK/TO-236AB/REEL 11" Q3/
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Nexperia 23643
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AUD 0.0279
Multiples of: 1

190 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V0.33 nCEnhancement  
AO3401


SOT-23-3 MOSFETs ROHS
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TECH PUBLIC 23535
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AUD 0.0309
Multiples of: 20

                   
BSZ070N08LS5ATMA1


MOSFET TRENCH 40<-<100V
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Infineon 23531
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AUD 1.1289
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         Smd/SmtTSDSON - 8Cut TapeSi     Optimos
IRFR9310TRLPBF-BE3


MOSFET 400V P-CH HEXFET MOSFET D
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Vishay 23484
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AUD 1.0333
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1.8 A400 V7 OhmsP - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V13 nCEnhancement  
BSS138L


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 23425
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AUD 0.0116
Multiples of: 10

                   
AO3416


SOT-23 MOSFETs ROHS
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Bourne 23377
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AUD 0.0474
Multiples of: 10

                   
NTR5105PT1G


ON Semiconductor MOSFET PFET SOT23 60V 211MA 5OHM
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ON Semiconductor 23280
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AUD 0.0488
Multiples of: 3000

196 mA60 V6 OhmsP - Channel 1 V- 55 C+ 150 C403 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V1 nCEnhancement  
BSS209PWH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
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Infineon 23280
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AUD 0.0571
Multiples of: 3000

            Optimos P      
SI1062X-T1-GE3


MOSFET 20V .5A NCH
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Vishay 23280
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AUD 0.1387
Multiples of: 3000

500 mA20 V350 mOhmsN - Channel8 V0.4 v to 1 V- 55 C+ 150 C220 mWSmd/SmtSC - 89 - 3Reel   1 nCEnhancement Trenchfet
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