MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STD18NF25


STMicroelectronics MOSFET N-channel 250 V 17A STripFET II
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STMicroelectronics 21825
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AUD 1.7527
Multiples of: 2500

17 A250 V165 mOhmsN - Channel20 V3 V- 55 C+ 175 C110 WSmd/SmtDPAK - 3ReelSi1 Channel20 V29.5 nCEnhancementAec - Q101Stripfet
SPP80N03S2L04AKSA1


Infineon Technologies MOSFET N-Ch 30V 80A TO220-3
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Infineon 21825
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AUD 2.1835
Multiples of: 1

80 A30 V3.6 mOhmsn - channel 1.2 V- 55 C+ 175 C188 Wthrough holeTO - 220 - 3Tubesi1 channel20 V105 nCenhancement  
NCE6020AK


MOSFET N Trench 60V 20A 2.5V @ 250uA 35 mΩ @ 20A,10V TO-252-2 (DPAK) RoHS
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NCE Power 21800
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AUD 0.1196
Multiples of: 5

                   
SP8M51FRATB


MOSFET Nch+Pch 100V Vds 3A 0.135Rds(on) 8.5Qg
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ROHM 21690
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AUD 1.3846
Multiples of: 1

3 A , 2.5 A100 V120 mOhms , 210 mOhmsN - Channel, P - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel10 v , - 10 V8.5 nC , 12.5 nCEnhancementAec - Q101 
DMN2450UFB4-7B


MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K
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Diodes Incorporated 21670
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AUD 0.0576
Multiples of: 1

900 mA20 V600 mOhmsN - Channel 450 mV- 55 C+ 150 C0.89 WSmd/SmtX1 - DFN1212 - 3Cut TapeSi1 Channel12 V0.7 nCEnhancement  
BSC060N10NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 21634
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AUD 1.3549
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90 A100 V5.3 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSONReelSi1 Channel20 V68 nCEnhancement Optimos
Hot ZXMS6004FFTA


MOSFET 60V N-Channel self protected
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Diodes Incorporated 21610
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AUD 0.3969
Multiples of: 1

1.3 A60 V500 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSmd/SmtSOT - 23F - 3Cut TapeSi1 Channel5 V Enhancement Intellifet
IPD122N10N3GATMA1


MOSFET TRENCH >=100V
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Infineon 21609
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AUD 0.9848
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59 A100 V12.2 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V26 nCEnhancement Optimos
NTR1P02LT3G


MOSFET PFET SOT23 20V .160R
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ON Semiconductor 21601
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AUD 0.0889
Multiples of: 5

   P - Channel     Smd/SmtSOT - 23Reel       
AO4805


SOP-8 MOSFETs ROHS
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TECH PUBLIC 21592
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AUD 0.2209
Multiples of: 5

                   
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