MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS214NWH6327XTSA1


Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
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Infineon 22024
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AUD 0.0733
Multiples of: 1

            Optimos 2      
BUK7Y9R9-80EX


N-Channel 80 V 89A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8
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Nexperia 21896
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AUD 1.1768
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89 A80 V7.3 mOhmsN - Channel20 V3 V- 55 C+ 175 C195 WSmd/SmtLFPAK56 - 4ReelSi1 Channel20 V51.6 nCEnhancement  
DMC1030UFDBQ-7


MOSFET MOSFET BVDSS:
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Diodes Incorporated 21889
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AUD 0.2824
Multiples of: 1

5.1 A , 3.9 A12 V17 mOhms , 37 mOhmsN - Channel, P - Channel 400 mV , 1 V- 55 C+ 150 C1.36 WSmd/SmtDFN2020 - B - 6Cut TapeSi2 Channel8 V23.1 nC , 20.8 nCEnhancementAec - Q101 
SI2305


12V 4.1A 90mΩ@1.8V,2A 1.3W P Channel SOT-23-3 MOSFETs ROHS
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GOODWORK 21889
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AUD 0.0332
Multiples of: 10

                   
DMN6013LFG-7


Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF
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Diodes Incorporated 21838
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AUD 0.4871
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10.3 A60 V12.3 mOhmsN - Channel 1.8 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V26.6 nCEnhancement Dmn6
JSM80N03D


TO-252 MOSFETs ROHS
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JSMSEMI 21825
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AUD 0.0615
Multiples of: 5

                   
FDD8880


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor 21825
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AUD 0.545
Multiples of: 2500

58 A30 V9 mOhmsN - Channel  - 55 C+ 175 C55 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
STD30N6LF6AG


MOSFET Automotive-grade N-channel 60 V, 19 mOhm typ., 24 A STripFET F6 Power MOSFET in a DPAK package
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STMicroelectronics 21825
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AUD 0.5746
Multiples of: 2500

24 A60 V30 mOhmsN - Channel 1 V- 55 C+ 175 C40 WSmd/SmtDPAK - 3Reel-1 Channel+/- 20 V26 nCEnhancementAec - Q101Stripfet
NTD24N06LT4G


MOSFET 24V 60A POWER MOSFET
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ON Semiconductor 21825
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AUD 0.6638
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24 A60 V45 mOhmsN - Channel 1 V- 55 C+ 175 C62.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel5 V16 nCEnhancement  
STD5NK40ZT4


Transistor: N-MOSFET; unipolar; 400V; 1.9A; 45W; DPAK
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STMicroelectronics 289
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AUD 0.5601
Multiples of: 1

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