MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
20N06D


60V 20A 28mΩ 2.5V N Channel PDFN-8(3x3) MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HL 30205
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AUD 0.0733
Multiples of: 5

                   
NTMFS006N12MCT1G


120V 93A 104W 5mO@10V,46A N Channel DFN-5(5.9x4.9) MOSFETs ROHS
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ON Semiconductor 22515
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AUD 2.4043
Multiples of: 1

93 A120 V6 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSMD/SMTSO - 8FL - 4Reel , Cut TapeSi1 Channel- 20 V , 20 V42 nCEnhancement  
BSS139 H6906


Infineon Technologies MOSFET
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Infineon 22508
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AUD 0.4432
Multiples of: 1

100 mA250 V7.8 Ohmsn - channel 2.1 V- 55 C+ 150 C360 mWsmd/smtSOT - 23 - 3Reelsi1 channel20 V3.5 nCdepletion  
BSP317PH6327XTSA1


Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
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Infineon 22310
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AUD 0.3212
Multiples of: 1000

            Sipmos      
BSC027N06LS5ATMA1


MOSFET DIFFERENTIATED MOSFETS
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Infineon 21726
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AUD 1.5243
Multiples of: 1

100 A60 V2.3 mOhmsN - Channel 1.1 V- 55 C+ 150 C83 WSmd/SmtTDSON - 8Cut TapeSi1 Channel20 V30 nCEnhancement Optimos 5
SI2301S


20V 2.3A 1PCSPChannel SOT-23 MOSFETs ROHS
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FOSAN 19254
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AUD 0.0113
Multiples of: 50

                   
SI2302DS


SOT-23 MOSFETs ROHS
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TECH PUBLIC 14045
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AUD 0.023
Multiples of: 20

                   
SI2369DS-T1-BE3


MOSFET P-CHANNEL 30-V (D-S)
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Vishay 12976
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AUD 0.2483
Multiples of: 1

7.6 A30 V29 mOhmsP - Channel 2.5 V- 55 C+ 150 C2.5 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V11.4 nCEnhancement  
HSBB6115


MOSFET P Channel 60V 26A 2.5V @ 250uA 25mΩ @ 10A,10V PRPAK3x3 RoHS
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HUASHUO 6595
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AUD 0.3403
Multiples of: 1

                   
PMDT290UNE,115


MOSFET 20V 800 MA DUAL N-CH TRENCH MOSFET
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Nexperia 1847
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AUD 0.1132
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 666Reel       
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