MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
8205A


20V 22mΩ@4.5V,4.5A 2W 1.5V@250uA 74.69pF@8V 2 N Channel(Double)Common Drain 522.3pF@8V 6.24nC@4.5V -55℃~+150℃@(Tj) SOT-23-6 MOSFETs ROHS
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JSMSEMI 32019
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AUD 0.0369
Multiples of: 10

                   
DMN2056U-7


MOSFET MOSFET N-CHANNEL 20V 4A SOT23-3
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Diodes Incorporated 28498
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AUD 0.056
Multiples of: 10

         Smd/SmtSOT - 23 - 3Cut TapeSi      
AUIRFS8409TRL


Trans MOSFET N-CH 40V 409A Automotive 3-Pin(2+Tab) D2PAK T/R
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Infineon 17848
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AUD 5.3768
Multiples of: 1

195 A40 V970 uOhmsN - Channel    375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel 300 nC Aec - Q101Coolirfet
DMP68D1LQ-7


MOSFETs 2N7002 Family SOT23 T and R 3K
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Diodes Incorporated 17817
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AUD 0.1037
Multiples of: 1

206 mA60 V7.5 OhmsP - Channel 2.1 V- 55 C+ 150 C500 mWSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V600 pCEnhancement  
SSM14N956L,EFF


MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
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Toshiba 17753
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AUD 0.8407
Multiples of: 1

  1.35 mOhmsN - Channel   + 150 C1.33 WSMD/SMT Reel , Cut TapeSi2 Channel- 8 V , + 8 V76 nCEnhancement  
IRF520NPBF


MOSFET N Trench 100V 9.7A 4V @ 250uA 200 mΩ @ 5.7A,10V TO-220 (TO-220-3) RoHS
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Infineon 17679
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AUD 0.4993
Multiples of: 1

            Hexfet®      
BLM3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 59 mΩ @ 4A,2.5V SOT-23 (SOT-23-3) RoHS
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Belling 17139
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AUD 0.0483
Multiples of: 10

                   
MDD50N06D


60V 50A 17mΩ@10V null TO-252 MOSFETs ROHS
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Microdiode Electronics 17013
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AUD 0.1386
Multiples of: 5

                   
2302


20V 3A 45m 1.25W SOT-23 MOSFETs ROHS
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OSEN 8245
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AUD 0.0101
Multiples of: 50

                   
BSS84


50V 0.13A 8Ω@10V,0.15A 0.225W 2V@250uA 5pF@5V P Channel 30pF@5V +150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 6130
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AUD 0.0177
Multiples of: 20

                   
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