MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD30N08S2L-21


MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm
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Infineon 17518
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AUD 1.2467
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30 A75 V20.5 mOhmsN - Channel 1.2 V- 55 C+ 175 C136 WSmd/SmtTO - 252ReelSi1 Channel10 V56 nCEnhancementAec - Q101Optimos
NTGS3446T1G


MOSFET 20V 5.1A N-Channel
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ON Semiconductor 17507
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AUD 0.2619
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2.5 A20 V36 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel12 V Enhancement  
SI4931DY-T1-E3


Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC
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Vishay 17497
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AUD 0.9795
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   p - channel  - 55 C+ 150 C smd/smtSOIC - 8 NarrowReel      trenchfet
BSC030N04NS G


Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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Infineon 17496
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AUD 0.7849
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23 A40 V3 mOhmsN - Channel 2 V- 55 C+ 150 C2.5 WSmd/SmtTDSON - 8ReelSi1 Channel20 V61 nCEnhancement Optimos
BSC123N10LS G


Infineon Technologies MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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Infineon 17492
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AUD 1.1314
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10.6 A100 V12.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V68 nCEnhancement Optimos
DMN2053UVT-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 17489
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AUD 0.1537
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4.6 A20 V35 mOhmsN - Channel 0.4 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel12 V3.6 nCEnhancement  
Hot DMN1150UFB-7B


Diodes Incorporated MOSFET N-CH MOSFET 12V
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Diodes Incorporated 17467
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AUD 0.0837
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1.41 A12 V210 mOhmsN - Channel 350 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtX1 - DFN1006 - 2ReelSi1 Channel6 V1.5 nCEnhancement  
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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Infineon 17460
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AUD 0.0385
Multiples of: 3000

            Optimos      
2N7002


Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R
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Taitron 17460
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AUD 0.0694
Multiples of: 3000

                   
TQM2N7002CU RFG


MOSFETs 60V, 0.31A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17460
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AUD 0.0716
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310 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C568 mWSMD/SMTSOT - 323Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
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