MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL90N6F7


MOSFET N-channel 60 V, 0.0046 Ohm typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 17460
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AUD 0.7518
Multiples of: 3000

90 A60 V5.4 mOhmsN - Channel 2 V- 55 C+ 175 C94 WSmd/SmtPowerflat - 8ReelSi1 Channel+/- 20 V25 nCEnhancement Stripfet
STL3NM60N


MOSFET N-Ch 600V 1.5Ohm 2.2A MDMesh II MOS
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STMicroelectronics 17460
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AUD 0.82
Multiples of: 3000

2.2 A600 V1.8 OhmsN - Channel 2 V- 55 C+ 150 C2 WSmd/SmtPowerflat 3.3 x 3.3ReelSi1 Channel10 V9.5 nCEnhancement Mdmesh
IPP029N06NAKSA1


Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
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Infineon 17460
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AUD 1.45
Multiples of: 500

            optimos      
NVMFD024N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor 17460
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AUD 1.714
Multiples of: 1

           Cut Tape       
IPB027N10N3GATMA1


Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
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Infineon 17460
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AUD 3.8257
Multiples of: 1000

            Optimos 3      
BSS205N H6327


Infineon Technologies MOSFET N-Ch 20V 2.5A SOT-23-3
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Infineon 17453
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AUD 0.0974
Multiples of: 1

2.5 A20 V40 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel12 V3.2 nCEnhancementAec - Q101 
SSM3K131TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=6.0A RDSON=0.0415Ohm @ 4.5V in UFM package
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Toshiba 17435
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AUD 0.2788
Multiples of: 1

6 A30 V27.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtUFM - 3Cut TapeSi1 Channel20 V10.1 nCEnhancement U - Mosiv
UT6MA2TCR


MOSFET 30V NCH+PCH MIDDLE PWR
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ROHM 17416
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AUD 0.341
Multiples of: 1

4 A30 V46 mOhms , 70 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel20 V4.3 nC , 6.7 nCEnhancement  
SIDR668ADP-T1-RE3


MOSFET N-CHANNEL 100-VD-S PowerPAK SO-8
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Vishay 17241
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AUD 2.0743
Multiples of: 1

104 A100 V4.8 mOhmsN - Channel 4 V- 55 C+ 150 C125 WSMD/SMTSO - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V42 nCEnhancement TrenchFET, PowerPAK
2N7002T


SOT-523 MOSFETs ROHS
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GOODWORK 16839
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AUD 0.0264
Multiples of: 20

                   
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