MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN0R9-25YLC,115


MOSFET N-Ch 25V 0.99 mOhms
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Nexperia 24276
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AUD 1.1896
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   N - Channel  - 55 C+ 175 C Smd/SmtLFPAKReel       
NCEP1520K


MOSFET N Trench 150V 20A 4.5V @ 250uA 65 mΩ @ 10A,10V TO-252 RoHS
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NCE Power 17232
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AUD 0.3537
Multiples of: 5

                   
IRL100HS121


Transistor: N-MOSFET; unipolar; 100V; 7.8A; 5.8W; PQFN2X2
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Infineon 17127
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AUD 0.4746
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            Optimos 5      
BSZ900N15NS3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
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Infineon 17117
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AUD 0.462
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            Optimos 3      
IRLML5203TRPBF


MOSFET P Trench 30V 3A 2.5V @ 250uA 98 mΩ @ 3A,10V SOT-23 (SOT-23-3) RoHS
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Infineon 17101
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AUD 0.3463
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            Hexfet®      
BSZ035N03MSGATMA1


MOSFET LV POWER MOS
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Infineon 17085
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AUD 0.5921
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           Reel      Optimos
SSM6J212FE,LF


Toshiba MOSFET P-Ch U-MOS VI FET ID -4A -20VDSS 500mW
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Toshiba 17061
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AUD 0.2337
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4 A20 V94 mOhmsP - Channel 1 V- 55 C+ 150 C500 mWSMD/SMTES6 - 6Reel , Cut TapeSi1 Channel- 8 V , 8 V14.1 nCEnhancement U - MOSVI
SSM14N956L,EFF


MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
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Toshiba 17055
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AUD 0.9193
Multiples of: 1

  1.35 mOhmsN - Channel   + 150 C1.33 WSMD/SMT Reel , Cut TapeSi2 Channel- 8 V , + 8 V76 nCEnhancement  
TPCJ2101


20V 1.4A 100mO@4.5V,1A 290mW P Channel SOT-323-3 MOSFETs ROHS
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TECH PUBLIC 16975
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AUD 0.0494
Multiples of: 10

                   
AO4882


SOP-8 MOSFETs ROHS
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TECH PUBLIC 15563
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AUD 0.2416
Multiples of: 5

                   
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