MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STH240N10F7-6


STMicroelectronics MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 17460
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AUD 2.9067
Multiples of: 1000

180 A100 V2.5 mOhmsN - Channel 2.5 V- 55 C+ 175 C300 WSmd/SmtH2PAK - 6ReelSi1 Channel20 V160 nCEnhancement Stripfet
Hot IPP020N08N5AKSA1


Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
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Infineon 17460
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AUD 4.1853
Multiples of: 500

            Optimos 5      
IRLML6246TRPBF


SOT-23 MOSFETs ROHS
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TECH PUBLIC 17450
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AUD 0.0721
Multiples of: 10

                   
TQM2N7002CX RFG


MOSFETs 60V, 0.38A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 17435
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AUD 0.0663
Multiples of: 1

380 mA60 V3 OhmsN - Channel 2.5 V- 55 C+ 150 C806 mWSMD/SMTSOT - 23Reel , Cut TapeSi1 Channel+ 20 V1.7 nCEnhancementAEC - Q101 
SSM3K131TU,LF


MOSFET Small Signal MOSFET N-ch VDSS=30V VGSS=+-20V ID=6.0A RDSON=0.0415Ohm @ 4.5V in UFM package
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Toshiba 17435
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AUD 0.2788
Multiples of: 1

6 A30 V27.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C800 mWSmd/SmtUFM - 3Cut TapeSi1 Channel20 V10.1 nCEnhancement U - Mosiv
IRF3709ZSTRRPBF


MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
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Infineon 17422
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AUD 1.141
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87 A30 V7.8 mOhmsN - Channel    79 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V17 nC   
UT6MA2TCR


MOSFET 30V NCH+PCH MIDDLE PWR
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ROHM 17416
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AUD 0.341
Multiples of: 1

4 A30 V46 mOhms , 70 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C2 WSmd/SmtHuml2020l - 8Cut TapeSi2 Channel20 V4.3 nC , 6.7 nCEnhancement  
SSM3K16CT,L3F(T


SOT-883-3 MOSFETs ROHS
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Toshiba 17407
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AUD 0.0382
Multiples of: 5

                   
SI4134DY-T1-GE3


MOSFET 30V Vds 20V Vgs SO-8
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Vishay 17275
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AUD 0.2073
Multiples of: 5

         Smd/SmtSO - 8Cut TapeSi     Trenchfet
IPB108N15N3GATMA1


Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
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Infineon 7760
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AUD 2.558
Multiples of: 1000

            Optimos 3      
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