MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ISC104N12LM6ATMA1


MOSFETs N
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 16195
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AUD 1.1739
Multiples of: 1

63 A120 V10.4 mOhmsN - Channel 2.2 V- 55 C+ 175 C94 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.4 nCEnhancement OptiMOS
CEDM7002AE TR


MOSFET 60V N-Ch ESD FET 60Vdg 20Vgs 100mW
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Central Semiconductor 16104
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AUD 0.132
Multiples of: 1

         Smd/SmtSOT - 883LCut TapeSi      
IPD079N06L3GBTMA1


Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO252-3
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Infineon 16102
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AUD 0.7305
Multiples of: 1

            optimos 3      
SSM3K123TU,LF(T


Transistor: N-MOSFET; unipolar; 20V; 4.2A; 800mW; UFM
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Toshiba 16006
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AUD 0.2299
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BSS159NH6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
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Infineon 16004
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AUD 0.218
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            Sipmos      
BSP324H6327XTSA1


Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
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Infineon 15949
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AUD 0.462
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            Sipmos      
SI2300


MOSFET SOT23 RoHS
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TWGMC 15694
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AUD 0.031
Multiples of: 20

                   
CJ2312


MOSFET N Trench 20V 5A 1V @ 250uA 31.8 mΩ @ 5A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology 14996
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AUD 0.0461
Multiples of: 10

                   
BUK6D120-60PX


BUK6D120-60P/SOT1220/SOT1220
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Nexperia 13757
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AUD 0.209
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8 A60 V95 mOhmsP - Channel 3.2 V- 55 C+ 175 C15 WSMD/SMTDFN - 2020 - 6Cut Tape , ReelSi1 Channel- 20 V , + 20 V2.6 nCEnhancementAEC - Q101 
BSC123N10LS G


Infineon Technologies MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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Infineon 11197
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AUD 1.0403
Multiples of: 1

10.6 A100 V12.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V68 nCEnhancement Optimos
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