MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2305A


MOSFET P Trench 20V 4.2A 500mV @ 250uA（Min） 65 mΩ @ 4.2A,4.5V SOT-23 RoHS
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Youtai 16703
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AUD 0.0309
Multiples of: 20

                   
ZVP3306A


P-Channel 60 V 160mA (Ta) 625mW (Ta) Through Hole TO-92
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Diodes Incorporated 16689
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AUD 0.44
Multiples of: 1

160 mA60 V14 OhmsP - Channel 1.5 V- 55 C+ 150 C625 mWThrough HoleTO - 92 - 3BulkSi1 Channel10 V Enhancement  
FDMS8820


Fairchild Semiconductor MOSFET NCh 30V 116A 2.4mOhm
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ON Semiconductor 16683
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AUD 0.8784
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116 A30 V2.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C78 WSmd/SmtPOWER - 56 - 8ReelSi  88 nCEnhancement Powertrench
IRLML6401


MOSFET P Channel 16V 3A 1.5V @ 250uA 110mO @ 3A,4.5V SOT-23 RoHS
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Shikues 16663
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AUD 0.0395
Multiples of: 10

                   
2N7002


Transistor: N-MOSFET; unipolar; 60V; 0.8A; 0.2W; SOT23
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ON Semiconductor 16600
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AUD 0.044
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BSS131H6327XT


MOSFET SIPMOS Small Signal Transistor
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Infineon 16593
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AUD 0.0908
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110 mA240 V14 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V2.1 nCEnhancementAec - Q101 
SI7137DP-T1-GE3


Vishay Semiconductors MOSFET -20V 1.95mOhm10V 60A P-Ch G-III
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Vishay 16481
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AUD 0.6681
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ZXMN4A06GTA


N-Channel 40 V 5A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 16385
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AUD 0.596
Multiples of: 1

7 A40 V50 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V18.2 nCEnhancement  
SI2309CDS-T1-E3


Vishay Semiconductors MOSFET 60V 1.6A 1.7W 345mohm 10V
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Vishay 12622
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AUD 0.2545
Multiples of: 1

1.2 A- 60 V345 mOhmsP - Channel20 V - 55 C+ 150 C1 WSmd/SmtSOT - 23 - 3Reel    Enhancement  
DMN2058UW-7


MOSFET MOSFET BVDSS: 8V~24V SOT323 T&R 3K
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Diodes Incorporated 5522
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AUD 0.0837
Multiples of: 1

3.5 A20 V42 mOhmsN - Channel 400 mV- 55 C+ 150 C0.7 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel12 V7.7 nCEnhancement  
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