MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN2004DMK-7


MOSFET Dual N-Channel
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Diodes Incorporated 16477
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AUD 0.2216
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   N - Channel  - 65 C+ 150 C Smd/SmtSOT - 26 - 6Reel       
IPT020N10N5ATMA1


100V 2mO@150A,10V 273W N Channel HSOF-8-1 MOSFETs ROHS
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Infineon 16472
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AUD 2.8286
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IPG20N04S412AATMA1


MOSFET MOSFET
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Infineon 16433
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AUD 0.7054
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AO4404


SOP-8 MOSFETs ROHS
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Youtai 16415
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AUD 0.1352
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NTGS3446T1G


MOSFET 20V 5.1A N-Channel
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ON Semiconductor 16401
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AUD 0.2364
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2.5 A20 V36 mOhmsN - Channel  - 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6ReelSi1 Channel12 V Enhancement  
ZXMN4A06GTA


N-Channel 40 V 5A (Ta) 2W (Ta) Surface Mount SOT-223-3
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Diodes Incorporated 16385
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AUD 0.596
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7 A40 V50 mOhmsN - Channel 1 V- 55 C+ 150 C3.9 WSmd/SmtSOT - 223 - 4Cut TapeSi1 Channel10 V18.2 nCEnhancement  
CSD19532KTTT


MOSFET 100V, N-channel NexFET Pwr MOSFET
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Texas Instruments 16369
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AUD 2.2349
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200 A100 V5.6 mOhmsN - Channel 2.6 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V44 nC  Nexfet
SI2316BDS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 16366
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AUD 0.4305
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4.5 A30 V50 mOhmsN - Channel 3 V- 55 C+ 150 C1.66 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V3.16 nCEnhancement  
2N7002


60V 340mA 900m@10V,500mA 350mW 1 N-Channel SOT-23 MOSFETs ROHS
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XZT 16296
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AUD 0.0131
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FDN5618P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 7585
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AUD 0.0891
Multiples of: 5

                   
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