MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPG20N04S412AATMA1


MOSFET MOSFET
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Infineon 16433
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AUD 0.7054
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           Cut Tape       
FQPF85N06


Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
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ON Semiconductor 16431
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AUD 3.1994
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            qfet®      
AO4404


SOP-8 MOSFETs ROHS
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Youtai 16415
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AUD 0.1352
Multiples of: 5

                   
DMN53D0LQ-7


MOSFET N-Ch. 50V 500mA AEC-Q101
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Diodes Incorporated 16413
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AUD 0.0733
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500 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V600 pCEnhancementAec - Q101 
2N7002


60V 340mA 900m@10V,500mA 350mW 1 N-Channel SOT-23 MOSFETs ROHS
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XZT 16393
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AUD 0.0139
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CSD19532KTTT


MOSFET 100V, N-channel NexFET Pwr MOSFET
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Texas Instruments 16369
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AUD 2.2349
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200 A100 V5.6 mOhmsN - Channel 2.6 V- 55 C+ 175 C250 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V44 nC  Nexfet
SI2316BDS-T1-BE3


MOSFET N-CHANNEL 30-V (D-S)
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Vishay 16366
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AUD 0.4305
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4.5 A30 V50 mOhmsN - Channel 3 V- 55 C+ 150 C1.66 WSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V3.16 nCEnhancement  
DMG6968U-7


MOSFET N-CHANNEL ENHANCEMENT MODE
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Diodes Incorporated 16300
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AUD 0.0739
Multiples of: 5

6.5 A20 V25 mOhmsN - Channel 500 mV- 55 C+ 150 C1.3 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V8.5 nCEnhancement  
SI2319CDS-T1-GE3


MOSFET -40V Vds 20V Vgs SOT-23
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Vishay 14567
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AUD 0.2989
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4.4 A40 V77 mOhmsP - Channel 1.2 V- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V21 nCEnhancement Trenchfet
IRF8788TRPBF


MOSFET N Trench 30V 24A 2.35V @ 100uA 2.8 mΩ @ 24A,10V SOIC-8_150mil RoHS
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Infineon 7760
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AUD 0.646
Multiples of: 4000

24 A30 V3.04 mOhmsN - Channel 1.8 V- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V44 nC   
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