MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Minimum Operating Temperature
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Maximum Operating Temperature
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4401DDY-T1-GE3


P-Channel 40 V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC
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Vishay 18326
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AUD 0.5301
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   P - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
PMV42ENER


MOSFET PMV42ENE/TO-236AB/REEL 7" Q3/T
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Nexperia 16292
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AUD 0.1351
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           Cut TapeSi      
TSM2537CQ RFG


MOSFET MOSFET Complementary N-Ch, 20V, 11.6A
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Taiwan Semiconductor 16270
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AUD 0.3017
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11.6 A , 9 A20 V17 mOhms , 48 mOhmsN - Channel, P - Channel 500 mV , 450 mV- 55 C+ 150 C6.25 w , 6.25 WSmd/SmtTDFN22 - 6Cut TapeSi2 Channel4.5 v , - 4.5 V9.1 nC , 9.8 nCEnhancement  
BSC123N10LS G


Infineon Technologies MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
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Infineon 16037
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AUD 1.0741
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10.6 A100 V12.3 mOhmsN - Channel 1.2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V68 nCEnhancement Optimos
AON7403


PDFN-8 MOSFETs ROHS
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TECH PUBLIC 15791
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AUD 0.2192
Multiples of: 5

                   
SI2309S


SOT-23 MOSFETs ROHS
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Bourne 15374
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AUD 0.054
Multiples of: 10

                   
WSD4070DN


40V 68A 4.5mΩ@10V,7A 3.1W N Channel PDFN3333-8 MOSFETs ROHS
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Winsok 13109
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AUD 0.3065
Multiples of: 1

                   
LBSS84ELT1G


60V 130mA 5Ω@10V,100mA 225mW 2V@250uA P Channel SOT-23 MOSFETs ROHS
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Leshan 12357
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AUD 0.0202
Multiples of: 20

                   
FDMA86108LZ


Fairchild Semiconductor MOSFET
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ON Semiconductor 1876
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AUD 0.818
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2.2 A100 V446 mOhmsN - Channel 1 V- 55 C+ 150 C2.4 WSmd/SmtMICRO - FET - 6ReelSi1 Channel+/- 20 V2.1 nCEnhancement Powertrench
AOD407


MOSFET P Trench 60V 12A (Tc) 3V @ 250uA 115 mΩ @ 12A,10V TO-252-2 (DPAK) RoHS
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Alpha & Omega 1867
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AUD 0.2448
Multiples of: 5

12 A  P    2.5 WSurface Mount Tape And Reel    Enhancement  
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