MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BS170


mosfet n trench 60v 500ma 3v @ 1ma 5 @ 200ma,10v to-92 (to-92-3) rohs
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ON Semiconductor 15641
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AUD 0.1184
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BSS314PE H6327


Infineon Technologies MOSFET P-Ch -30V -1.5A SOT-23-3
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Infineon 15592
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AUD 0.1028
Multiples of: 5

1.5 A30 V107 mOhmsP - Channel 2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3-Si1 Channel20 V- 2.9 nCEnhancementAec - Q101 
IRFP4768PBF


MOSFET N Trench 250V 93A 5V @ 250uA 17.5 mΩ @ 56A,10V TO-247 (AC) RoHS
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Infineon 15558
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AUD 2.0653
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93 A250 V17.5 mOhmsN - Channel  - 55 C+ 175 C520 WThrough HoleTO - 247ACTubeSi1 Channel20 V180 nCEnhancement  
MMBT3906M


SOT-723 MOSFETs ROHS
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TECH PUBLIC 15520
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AUD 0.0291
Multiples of: 20

                   
IPD023N04NF2SATMA1


MOSFETs N
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Infineon 15501
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AUD 1.1299
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143 A40 V2.3 mOhmsN - Channel 2.2 V- 55 C+ 175 C150 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V68 nCEnhancement StrongIRFET
AO3400


30V 5.8A 28mO@10V,2.9A 1.4W N Channel SOT-23 MOSFETs ROHS
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LGE 15442
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AUD 0.0384
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AO4409


SOP-8 MOSFETs ROHS
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Youtai 15306
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AUD 0.1373
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HYG060N08NS1D


80V 80A 5.7mΩ@10V,40A 75W 3V@250uA N Channel TO-252-2 MOSFETs ROHS
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HuaYi 14340
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AUD 0.3535
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SI1902CDL-T1-GE3


MOSFET 20V Vds 12V Vgs SC70-6
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Vishay 12901
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AUD 0.1788
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1.1 A20 V235 mOhmsN - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel4.5 V2 nCEnhancement Trenchfet
NX3008NBKW.115


SMD N Channel Transistors
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Nexperia 12715
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AUD 0.122
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