MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BC2301(2.8A) 2301


SOT-23-3L MOSFETs ROHS
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Hong Kong Chuangji 16354
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AUD 0.0191
Multiples of: 10

                   
DMP6110SSS-13


MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC
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Diodes Incorporated 16278
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AUD 0.2741
Multiples of: 1

- 4.5 A- 60 V98 mOhmsP - Channel20 V- 3 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi1 Channel20 V9.5 nCEnhancement  
SI2323DDS


SOT23 MOSFETs ROHS
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TECH PUBLIC 16223
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AUD 0.1076
Multiples of: 5

                   
BSS316NH6327XT


MOSFET OptiMOS 2 Small Signal Transistor
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Infineon 16222
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AUD 0.0646
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1.4 A30 V160 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT - 23ReelSi1 Channel10 V600 pCEnhancementAec - Q101 
IPD100N06S403ATMA2


60V 100A 3.5mO@100A,10V 150W N Channel TO-252-3-11 MOSFETs ROHS
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Infineon 16201
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AUD 1.6607
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   N - Channel     Smd/SmtTO - 252 - 3Cut TapeSi1 Channel   Aec - Q101 
IPW50R140CPFKSA1


Transistor: N-MOSFET; unipolar; 500V; 23A; 192W; PG-TO247-3
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Infineon 16180
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AUD 5.8532
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            coolmos cp      
SSM3K333R,LF(T


MOSFET N Trench 30V 6A 2.5V @ 100uA 28 mΩ @ 5A,10V SOT-23F RoHS
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Toshiba 16169
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AUD 0.045
Multiples of: 10

                   
IRF7351TR(UMW)


SOP-8 MOSFETs ROHS
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Youtai 16022
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AUD 0.318
Multiples of: 5

                   
IPN50R3K0CEATMA1


Transistor: N-MOSFET; unipolar; 500V; 1.6A; 5W; PG-SOT223
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Infineon 16014
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AUD 0.2548
Multiples of: 1

            Coolmos Ce      
NTMFS4927NT1G


N-Channel 30 V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 16005
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AUD 0.4673
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38 A30 V13.5 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtSO - 8FLReelsi1 channel20 V8 nC   
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