MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS138


50V 220mA 3.5Ω@10V,220mA 225mW 1.6V@1mA null SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yongyutai Electronics 31117
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AUD 0.0119
Multiples of: 20

                   
TPH2R608NH,L1Q(M


SOP-8 MOSFETs ROHS
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Toshiba 27416
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AUD 1.3071
Multiples of: 1

                   
BSS138PS


50V 300mA 1.5@10V,500mA 300mW 1V@250uA 2 N-Channel SOT-363 MOSFETs ROHS
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ElecSuper 16465
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AUD 0.0302
Multiples of: 5

                   
TQM84KCU RFG


MOSFETs -60V, -0.16A, Single P-Channel Small-signal MOSFETs
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Taiwan Semiconductor 16447
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AUD 0.0597
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160 mA60 V7 OhmsP - Channel 2.5 V- 55 C+ 150 C300 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.9 nCEnhancementAEC - Q101 
BSO220N03MD G


MOSFET OptiMOS 3 M-Series PWR-MOSFET DUAL N-CH
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Infineon 16405
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AUD 0.4319
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7.7 A30 V18.3 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel20 V10 nCEnhancement Optimos
8205A-JSM


TSSOP-8 MOSFETs ROHS
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JSMSEMI 16315
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AUD 0.0372
Multiples of: 10

                   
TQM2N7002KCU RFG


MOSFETs 60V, 0.32A, Single N-Channel Small-signal MOSFETs
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Taiwan Semiconductor 16265
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AUD 0.0597
Multiples of: 1

320 mA60 V1.6 OhmsN - Channel 2.5 V- 55 C+ 150 C316 mWSMD/SMTSOT - 323 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V1.7 nCEnhancementAEC - Q101 
2N7002KW


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 15403
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AUD 0.0195
Multiples of: 20

                   
HX3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 39 mΩ @ 5.8A,10V SOT23-3 RoHS
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hengjiaxing 11581
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AUD 0.0212
Multiples of: 20

                   
BSP135 H6327


Infineon Technologies MOSFET N-Ch 600V 120mA SOT-223-3
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Infineon 6671
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AUD 0.6778
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20 mA600 V60 OhmsN - Channel - 1.4 V- 55 C+ 150 C1.8 WSmd/SmtPG - SOT223Reel-1 Channel+/- 20 V3.7 nCDepletion  
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