MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2392ADS


SOT23 MOSFETs ROHS
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TECH PUBLIC 15850
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AUD 0.1051
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FDB070AN06A0


Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
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ON Semiconductor 15803
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AUD 2.654
Multiples of: 1

            Powertrench®      
IPD25CN10NGATMA1


Infineon Technologies MOSFET
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Infineon 15790
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AUD 0.7543
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35 A100 V19 mOhmsN - Channel+/- 20 V3 V- 55 C+ 175 C71 WSmd/SmtPG - TO 252 - 3Reel- 20 V23 nCEnhancement Optimos
DMP32D4SW-7


Diodes Incorporated MOSFET 30V P-CH MOSFET
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Diodes Incorporated 15783
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AUD 0.1048
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250 mA30 V4 OhmsP - Channel 2.4 V- 55 C+ 150 C370 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel20 V1.2 nCEnhancement  
STP40NF10L


Transistor: N-MOSFET; unipolar; 100V; 25A; 150W; TO220-3
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STMicroelectronics 15767
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AUD 0.9738
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STP120NF10


Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; TO220-3
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STMicroelectronics 15754
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AUD 2.3188
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BSP317P H6327


Infineon Technologies MOSFET P-Ch -250V -430mA SOT-223-3
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Infineon 15753
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AUD 0.4487
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430 mA250 V3 OhmsP - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel20 V- 15.1 nCEnhancement  
CSD17552Q3A


N-Channel 30 V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3)
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Texas Instruments 15735
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AUD 0.6076
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48 A30 V8.1 mOhmsN - channel 1.5 V- 55 C+ 150 C2.6 WSmd/smtSON - 8ReelSi1 Channel20 V9 nC  Nexfet
NTF5P03T3G


ON Semiconductor MOSFET 30V 5.2A P-Channel
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ON Semiconductor 15716
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AUD 0.4103
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- 5.2 A- 30 V100 mOhmsP - Channel20 V1 V- 55 C+ 150 C3.13 WSmd/SmtSOT - 223 - 3ReelSi1 Channel- 4.5 V15 nCEnhancement  
AO3401F


30V 3A 1.2W P Channel SOT-23 MOSFETs ROHS
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Bourne 15714
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AUD 0.0243
Multiples of: 20

                   
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