MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPN50R3K0CEATMA1


Transistor: N-MOSFET; unipolar; 500V; 1.6A; 5W; PG-SOT223
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Infineon 15820
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AUD 0.2396
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            Coolmos Ce      
BSC060N10NS3 G


MOSFET OptiMOS2 PWR Transistor N-CH
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Infineon 15744
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AUD 1.274
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90 A100 V5.3 mOhmsN - Channel 2 V- 55 C+ 150 C125 WSmd/SmtTDSONReelSi1 Channel20 V68 nCEnhancement Optimos
DMC3400SDW-7


MOSFET 30V Comp Pair Enh 20Vgs 55pF 0.6nC
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Diodes Incorporated 15743
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AUD 0.0635
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650 mA , 450 mA30 V200 mOhms , 360 mOhmsN - Channel, P - Channel 800 mV , 2.6 V- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel20 V1.4 nC , 1.3 nCEnhancement  
STP120NF10


Transistor: N-MOSFET; unipolar; 100V; 77A; 312W; TO220-3
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STMicroelectronics 15731
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AUD 1.9201
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BSP317P H6327


Infineon Technologies MOSFET P-Ch -250V -430mA SOT-223-3
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Infineon 15724
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AUD 0.4219
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430 mA250 V3 OhmsP - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel20 V- 15.1 nCEnhancement  
FQP9N30


MOSFET 300V N-Channel QFET
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ON Semiconductor 15704
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AUD 1.6915
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9 A300 V450 mOhmsn - channel  - 55 C+ 150 C98 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
TSM650P02CX RFG


MOSFET -20V -4.1A Single P-Channel Power MOSFET
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Taiwan Semiconductor 15700
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AUD 0.1515
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4.1 A20 V52 mOhmsP - Channel 400 mV + 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V6.4 nCEnhancement  
CSD17552Q3A


N-Channel 30 V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3)
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Texas Instruments 15696
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AUD 0.5713
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48 A30 V8.1 mOhmsN - channel 1.5 V- 55 C+ 150 C2.6 WSmd/smtSON - 8ReelSi1 Channel20 V9 nC  Nexfet
BUK78150-55ACUX


NXP Semiconductors MOSFET N-channel TrenchMOS standard level FET
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Nexperia 15694
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AUD 0.1987
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5.5 A55 V150 mOhmsN - Channel 2 V- 55 C+ 150 C8 WSmd/SmtSOT - 223 - 3ReelSi1 Channel10 V Enhancement  
AO3407


30V 4.3A 52mΩ@10V,4.1A 350mW 2.1V@250uA P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics 15520
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AUD 0.029
Multiples of: 20

                   
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