MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD8P10TM


Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
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ON Semiconductor 989400
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AUD 0.4861
Multiples of: 2500

            Qfet®      
STS6NF20V


N-Channel 20 V 6A (Tc) 2.5W (Tc) Surface Mount 8-SOIC
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STMicroelectronics 16032
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AUD 0.3174
Multiples of: 1

6 A20 V30 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8ReelSi1 Channel12 V Enhancement Stripfet
IAUZ30N10S5L240ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 16024
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AUD 0.5406
Multiples of: 1

30 A100 V26 mOhmsN - Channel 1.7 V- 55 C+ 175 C45.5 WSMD/SMTTSDSON - 8Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V9.5 nCEnhancement  
AO3407-JSM


SOT-23-3 MOSFETs ROHS
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JSMSEMI 15966
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AUD 0.0377
Multiples of: 20

                   
IRFP250MPBF


MOSFET N Trench 200V 30A 4V @ 250uA 75 mΩ @ 18A,10V TO-247 (AC) RoHS
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Infineon 15881
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AUD 0.7663
Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleTO - 247AC - 3Tube       
AO3422


SOT23 MOSFETs ROHS
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TECH PUBLIC 15675
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AUD 0.054
Multiples of: 10

                   
BSP170PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -1.9A; 1.8W; PG-SOT223
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Infineon 15078
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AUD 0.3976
Multiples of: 1

            Sipmos      
IRFP460APBF


N-Channel 500 V 20A (Tc) 280W (Tc) Through Hole TO-247AC
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Vishay 14985
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AUD 2.593
Multiples of: 1

20 A500 V270 mOhmsN - Channel 2 V- 55 C+ 150 C280 WThrough HoleTO - 247 - 3TubeSi1 Channel10 V105 nCEnhancement  
TPDMN26D0UFB4


DFN1006-3 MOSFETs ROHS
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TECH PUBLIC 9641
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AUD 0.0304
Multiples of: 20

                   
ECC111581EU


MOSFET N Trench 60V 430mA 2.5V @ 250uA 3 Ω @ 400mA,10V SOT-23 (SOT-23-3) RoHS
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Shikues 5577
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AUD 0.0155
Multiples of: 50

                   
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