MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS127 H6327


MOSFET N-KANAL SMALL SIGNAL MOS
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Infineon 15980
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AUD 0.4232
Multiples of: 1

21 mA600 V500 OhmsN - Channel 1.4 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtPG - SOT23 - 3ReelSi1 Channel10 V0.65 nCDepletion  
PJM2300NSA


MOSFET N Trench 20V 4.5A 1V @ 250uA 32 mΩ @ 3A,4.5V SOT-23 RoHS
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Pingjingsemi 15966
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AUD 0.0171
Multiples of: 20

                   
SI4936ADY-T1-E3


30V 4.4A 1.1W 36mO@10V,5.9A 2 N-Channel SOIC-8 MOSFETs ROHS
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Vishay 15900
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AUD 1.2571
Multiples of: 1

5.9 A30 V36 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSO - 8ReelSi2 Channel10 V13 nCEnhancement Trenchfet
BSS123IXTSA1


MOSFET SMALL SIGNAL MOSFETS
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Infineon 15370
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AUD 0.0566
Multiples of: 1

190 mA100 V6 OhmsN - Channel 1.8 V- 55 C+ 150 C500 mWSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V630 pCEnhancement  
NDS351AN


SOT-23 MOSFETs ROHS
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TECH PUBLIC 15287
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AUD 0.0478
Multiples of: 10

                   
TSM240N03CX RFG


MOSFET N Trench 30V 6.5A (Tc) 2.5V @ 250uA 24 mΩ @ 6A,10V SOT-23 RoHS
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Taiwan Semiconductor 15266
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AUD 0.1699
Multiples of: 1

6.5 A30 V17 mOhmsN - Channel 1.2 V- 55 C+ 150 C1.56 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.1 nCEnhancement  
2N7000


Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.35W; TO92
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Diotec 9850
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AUD 0.069
Multiples of: 1

200 mA60 V5 OhmsN - Channel 800 mV + 150 C350 mWThrough HoleTO - 92 - 2Ammo PackSi1 Channel- 20 V , + 20 V Enhancement 2N7000
AP68N06G


60V 50A 14mΩ@10V,25A 104W N Channel PDFN-8(5x6) MOSFETs ROHS
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Quan Li 8235
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AUD 0.247
Multiples of: 5

                   
SI4931DY-T1-E3


Mosfet Array 2 P-Channel (Dual) 12V 6.7A 1.1W Surface Mount 8-SOIC
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Vishay 1219
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AUD 0.8512
Multiples of: 1

   p - channel  - 55 C+ 150 C smd/smtSOIC - 8 NarrowReel      trenchfet
NTMFS4927NT1G


N-Channel 30 V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 0
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AUD 0.2493
Multiples of: 1500

38 A30 V13.5 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtSO - 8FLReelsi1 channel20 V8 nC   
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